Transistores - JFET

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
MV2N4093UB

MV2N4093UB

N CHANNEL JFET

Microchip Technology
2,853 -

RFQ

Bulk Military, MIL-PRF-19500/431 Active N-Channel 40 V 40 V 8 mA @ 20 V - - 16pF @ 20V 80 Ohms 360 mW -65°C ~ 175°C (TJ) Surface Mount
MV2N4093UB/TR

MV2N4093UB/TR

JFET

Microchip Technology
2,953 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/431 Active N-Channel 40 V 40 V 8 mA @ 20 V - - 16pF @ 20V 80 Ohms 360 mW -65°C ~ 175°C (TJ) Surface Mount
MV2N4091UB/TR

MV2N4091UB/TR

JFET

Microchip Technology
2,205 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/431 Active N-Channel 40 V 40 V 30 mA @ 20 V - - 16pF @ 20V 30 Ohms 360 mW -65°C ~ 175°C (TJ) Surface Mount
MV2N4092UB/TR

MV2N4092UB/TR

JFET

Microchip Technology
2,168 -

RFQ

Tape & Reel (TR) - Active N-Channel - - - - - - - - - -
MV2N5116UB

MV2N5116UB

JFET

Microchip Technology
2,224 -

RFQ

Bulk Military, MIL-PRF-19500 Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Surface Mount
MV2N5114UB

MV2N5114UB

JFET

Microchip Technology
2,618 -

RFQ

Bulk Military, MIL-PRF-19500 Active P-Channel 30 V 30 V 30 mA @ 18 V - 5 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Surface Mount
MV2N5115UB

MV2N5115UB

JFET

Microchip Technology
2,415 -

RFQ

Bulk Military, MIL-PRF-19500 Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Surface Mount
MV2N5115UB/TR

MV2N5115UB/TR

JFET

Microchip Technology
2,222 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500 Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Surface Mount
MV2N5116UB/TR

MV2N5116UB/TR

JFET

Microchip Technology
3,866 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500 Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Surface Mount
MV2N5114UB/TR

MV2N5114UB/TR

JFET

Microchip Technology
2,664 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500 Active P-Channel 30 V 30 V 30 mA @ 18 V - 5 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Surface Mount
2N4416AUBC/TR

2N4416AUBC/TR

JFET

Microchip Technology
3,720 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - -
2N4416AUBC

2N4416AUBC

JFET

Microchip Technology
2,608 -

RFQ

Bulk * Active - - - - - - - - - - -
MQ2N2608UB

MQ2N2608UB

JFET

Microchip Technology
3,880 -

RFQ

Bulk Military, MIL-PRF-19500/295 Active P-Channel 30 V - 1 mA @ 5 V - 750 mV @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) Surface Mount
MQ2N2608UB/TR

MQ2N2608UB/TR

JFET

Microchip Technology
3,579 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/295 Active P-Channel 30 V - 1 mA @ 5 V - 750 mV @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) Surface Mount
J111

J111

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,252 -

RFQ

J111

Ficha técnica

Bulk - Active N-Channel 35 V - 20 mA @ 15 V - 3 V @ 1 µA - 30 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
MMBF4093

MMBF4093

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,523 -

RFQ

MMBF4093

Ficha técnica

Bulk - Active N-Channel 40 V - 8 mA @ 20 V - 1 V @ 1 nA 16pF @ 20V 80 Ohms 350 mW -55°C ~ 150°C (TJ) Surface Mount
J107

J107

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,861 -

RFQ

J107

Ficha técnica

Bulk - Active N-Channel 25 V - 100 mA @ 15 V - 500 mV @ 1 µA - 8 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
J106

J106

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,733 -

RFQ

J106

Ficha técnica

Bulk - Active N-Channel 25 V - 200 mA @ 15 V - 2 V @ 1 µA - 6 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
J113

J113

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,083 -

RFQ

J113

Ficha técnica

Bulk - Active N-Channel 35 V - 2 mA @ 15 V - 500 mV @ 1 µA - 100 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
J112-D27Z

J112-D27Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,218 -

RFQ

J112-D27Z

Ficha técnica

Bulk - Active N-Channel 35 V - 5 mA @ 15 V - 1 V @ 1 µA - 50 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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