Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
HGT1S14N41G3VLS

HGT1S14N41G3VLS

IGBT, 25A, 445V, N-CHANNEL

Fairchild Semiconductor
2,704 -

RFQ

HGT1S14N41G3VLS

Ficha técnica

Bulk - Active - 445 V 25 A - - 136 W - Logic 26 nC - - - -55°C ~ 175°C (TJ) Surface Mount
HGT1S2N120CN

HGT1S2N120CN

N-CHANNEL IGBT

Fairchild Semiconductor
2,936 -

RFQ

HGT1S2N120CN

Ficha técnica

Tube - Obsolete NPT 1200 V 13 A 20 A 2.4V @ 15V, 2.6A 104 W 96µJ (on), 355µJ (off) Standard 30 nC 25ns/205ns 960V, 2.6A, 51Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGT1S20N36G3VL

HGT1S20N36G3VL

N-CHANNEL IGBT

Fairchild Semiconductor
3,269 -

RFQ

HGT1S20N36G3VL

Ficha técnica

Tube - Obsolete - 395 V 37.7 A - 1.9V @ 5V, 20A 150 W - Logic 28.7 nC -/15µs 300V, 10A, 25Ohm, 5V - -40°C ~ 175°C (TJ) Through Hole
HGT1S20N36G3VLS

HGT1S20N36G3VLS

IGBT, 37.7A, 355V, N-CHANNEL

Fairchild Semiconductor
3,537 -

RFQ

HGT1S20N36G3VLS

Ficha técnica

Bulk - Active - 415 V 37.7 A - 1.9V @ 5V, 20A 150 W - Logic 28.7 nC -/15µs 300V, 10A, 25Ohm, 5V - -40°C ~ 175°C (TJ) Surface Mount
ISL9V3036D3ST

ISL9V3036D3ST

N-CHANNEL IGBT

Fairchild Semiconductor
2,773 -

RFQ

ISL9V3036D3ST

Ficha técnica

Bulk EcoSPARK® Obsolete - 360 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 17 nC -/4.8µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
FGA20S120M

FGA20S120M

IGBT, 40A, 1200V, N-CHANNEL

Fairchild Semiconductor
3,292 -

RFQ

FGA20S120M

Ficha técnica

Bulk - Active Trench Field Stop 1200 V 40 A 60 A 1.85V @ 15V, 20A 348 W - Standard 208 nC - - - -55°C ~ 175°C (TJ) Through Hole
SGH20N60RUFDTU-FS

SGH20N60RUFDTU-FS

IGBT, 32A, 600V, N-CHANNEL

Fairchild Semiconductor
2,816 -

RFQ

SGH20N60RUFDTU-FS

Ficha técnica

Bulk - Active - 600 V 32 A 60 A 2.8V @ 15V, 20A 195 W 524µJ (on), 473µJ (off) Standard 80 nC 30ns/48ns 300V, 20A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
SGH10N60RUFDTU

SGH10N60RUFDTU

IGBT, 16A, 600V, N-CHANNEL

Fairchild Semiconductor
2,611 -

RFQ

SGH10N60RUFDTU

Ficha técnica

Bulk - Active - 600 V 16 A 30 A 2.8V @ 15V, 10A 75 W 141µJ (on), 215µJ (off) Standard 30 nC 15ns/36ns 300V, 10A, 20Ohm, 15V 60 ns -55°C ~ 150°C (TJ) Through Hole
FGA90N30DTU

FGA90N30DTU

IGBT, 90A, 300V, N-CHANNEL

Fairchild Semiconductor
3,577 -

RFQ

FGA90N30DTU

Ficha técnica

Tube - Obsolete - 300 V 90 A 220 A 1.4V @ 15V, 20A 219 W - Standard 87 nC - - 21 ns -55°C ~ 150°C (TJ) Through Hole
FGA70N30TTU

FGA70N30TTU

IGBT, 300V, N-CHANNEL

Fairchild Semiconductor
2,778 -

RFQ

FGA70N30TTU

Ficha técnica

Tube - Obsolete Trench 300 V - 160 A 1.5V @ 15V, 20A 201 W - Standard 125 nC - - - -55°C ~ 150°C (TJ) Through Hole
FGA50N100BNTTU

FGA50N100BNTTU

IGBT, 50A, 1000V, N-CHANNEL

Fairchild Semiconductor
2,089 -

RFQ

FGA50N100BNTTU

Ficha técnica

Tube - Obsolete NPT and Trench 1000 V 50 A 200 A 2.9V @ 15V, 60A 156 W - Standard 257 nC 34ns/243ns 600V, 60A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
SGP15N60RUFTU

SGP15N60RUFTU

N-CHANNEL IGBT

Fairchild Semiconductor
2,650 -

RFQ

SGP15N60RUFTU

Ficha técnica

Tube - Obsolete - 600 V 24 A 45 A 2.8V @ 15V, 15A 160 W 320µJ (on), 356µJ (off) Standard 42 nC 17ns/44ns 300V, 15A, 13Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGB40N6S2

FGB40N6S2

N-CHANNEL IGBT

Fairchild Semiconductor
2,399 -

RFQ

FGB40N6S2

Ficha técnica

Tube - Obsolete - 600 V 75 A 180 A 2.7V @ 15V, 20A 290 W 115µJ (on), 195µJ (off) Standard 35 nC 8ns/35ns 390V, 20A, 3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
HGTG20N60B3-FS

HGTG20N60B3-FS

IGBT, 40A, 600V, N-CHANNEL, TO-2

Fairchild Semiconductor
2,640 -

RFQ

HGTG20N60B3-FS

Ficha técnica

Bulk - Active - 600 V 40 A 160 A 2V @ 15V, 20A 165 W - Standard 135 nC - - - -40°C ~ 150°C (TJ) Through Hole
HGT1S12N60A4DS

HGT1S12N60A4DS

IGBT, 54A, 600V, N-CHANNEL, TO-2

Fairchild Semiconductor
2,701 -

RFQ

HGT1S12N60A4DS

Ficha técnica

Bulk - Active - 600 V 54 A 96 A 2.7V @ 15V, 12A 167 W 55µJ (on), 50µJ (off) Standard 120 nC 17ns/96ns 390V, 12A, 10Ohm, 15V 30 ns -55°C ~ 150°C (TJ) Surface Mount
FGB40N6S2T

FGB40N6S2T

N-CHANNEL IGBT

Fairchild Semiconductor
2,900 -

RFQ

FGB40N6S2T

Ficha técnica

Bulk - Obsolete - 600 V 75 A 180 A 2.7V @ 15V, 20A 290 W 115µJ (on), 195µJ (off) Standard 35 nC 8ns/35ns 390V, 20A, 3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
SGP40N60UFTU

SGP40N60UFTU

N-CHANNEL IGBT

Fairchild Semiconductor
3,201 -

RFQ

SGP40N60UFTU

Ficha técnica

Tube - Obsolete - 600 V 40 A 160 A 2.6V @ 15V, 20A 160 W 160µJ (on), 200µJ (off) Standard 97 nC 15ns/65ns 300V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
SGH15N120RUFTU

SGH15N120RUFTU

IGBT, 24A, 1200V, N-CHANNEL

Fairchild Semiconductor
2,800 -

RFQ

SGH15N120RUFTU

Ficha técnica

Bulk - Active - 1200 V 24 A 45 A 3V @ 15V, 15A 180 W - Standard 108 nC 20ns/60ns 600V, 15A, 20Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGA180N30DTU

FGA180N30DTU

IGBT, 180A, 300V, N-CHANNEL

Fairchild Semiconductor
2,040 -

RFQ

FGA180N30DTU

Ficha técnica

Tube - Obsolete - 300 V 180 A 450 A 1.4V @ 15V, 40A 480 W - Standard 185 nC - - 21 ns -55°C ~ 150°C (TJ) Through Hole
FGPF120N30TU

FGPF120N30TU

N-CHANNEL IGBT

Fairchild Semiconductor
3,656 -

RFQ

FGPF120N30TU

Ficha técnica

Tube - Obsolete - 300 V 120 A 180 A 1.4V @ 15V, 25A 60 W - Standard 112 nC - - - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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