Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IKW15N120H3

IKW15N120H3

IKW15N120 - DISCRETE IGBT WITH A

Infineon Technologies
3,533 -

RFQ

IKW15N120H3

Ficha técnica

Bulk * Active Trench Field Stop 1200 V 30 A 60 A 2.4V @ 15V, 15A 217 W 1.1mJ (on), 450µJ (off) Standard 75 nC 21ns/260ns 600V, 15A, 35Ohm, 15V 260 ns -40°C ~ 175°C (TJ) Through Hole
IKW75N60TA

IKW75N60TA

IKW75N60 - AUTOMOTIVE IGBT DISCR

Infineon Technologies
2,324 -

RFQ

IKW75N60TA

Ficha técnica

Bulk * Active Trench Field Stop 600 V 80 A 225 A 2V @ 15V, 75A 428 W 2mJ (on), 2.5mJ (off) Standard 470 nC 33ns/330ns 400V, 75A, 5Ohm, 15V 121 ns -40°C ~ 175°C (TJ) Through Hole
IGP30N60H3

IGP30N60H3

IGP30N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,586 -

RFQ

IGP30N60H3

Ficha técnica

Bulk * Active Trench Field Stop 600 V 60 A 120 A 2.4V @ 15V, 30A 187 W - Standard 165 nC 18ns/207ns 400V, 30A, 10.5Ohm, 15V - - Through Hole
IKP40N65H5

IKP40N65H5

INSULATED GATE BIPOLAR TRANSISTO

Infineon Technologies
2,883 -

RFQ

IKP40N65H5

Ficha técnica

Bulk TrenchStop™ 5 Active Trench Field Stop 650 V 74 A 120 A 2.1V @ 15V, 40A 250 W 390µJ (on), 120µJ (off) Standard 95 nC 22ns/165ns 400V, 20A, 15Ohm, 15V 62 ns -40°C ~ 175°C (TJ) Through Hole
IKW50N60TA

IKW50N60TA

IKW50N60 - AUTOMOTIVE IGBT DISCR

Infineon Technologies
3,470 -

RFQ

IKW50N60TA

Ficha técnica

Bulk * Active Trench Field Stop 600 V 80 A 150 A 2V @ 15V, 50A 333 W 1.2mJ (on), 1.4mJ (off) Standard 310 nC 26ns/299ns 400V, 50A, 7Ohm, 15V 143 ns -40°C ~ 175°C (TJ) Through Hole
IGW50N60H3

IGW50N60H3

IGW50N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,879 -

RFQ

IGW50N60H3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IGZ100N65H5

IGZ100N65H5

IGZ100N65 - DISCRETE IGBT WITHOU

Infineon Technologies
2,527 -

RFQ

IGZ100N65H5

Ficha técnica

Bulk * Active Trench Field Stop 650 V 161 A 400 A 2.1V @ 15V, 100A 536 W 850µJ (on), 770µJ (off) Standard 210 nC 30ns/421ns 400V, 50A, 8Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IHW20N65R5

IHW20N65R5

INSULATED GATE BIPOLAR TRANSISTO

Infineon Technologies
2,979 -

RFQ

IHW20N65R5

Ficha técnica

Bulk * Active Trench Field Stop 650 V 40 A 60 A 1.7V @ 15V, 20A 150 W - Standard 97 nC 24ns/250ns 400V, 10A, 20Ohm, 15V 82 ns -40°C ~ 175°C (TJ) Through Hole
IKZ50N65NH5XKSA

IKZ50N65NH5XKSA

IKZ50N65 - DISCRETE IGBT WITH AN

Infineon Technologies
3,778 -

RFQ

IKZ50N65NH5XKSA

Ficha técnica

Bulk * Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 273 W 350µJ (on), 200µJ (off) Standard 109 nC 22ns/252ns 400V, 25A, 15Ohm, 15V 46 ns -40°C ~ 175°C (TJ) Through Hole
IGP20N60H3

IGP20N60H3

IGP20N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,951 -

RFQ

IGP20N60H3

Ficha técnica

Bulk * Active Trench Field Stop 600 V 40 A 80 A 2.4V @ 15V, 20A 170 W - Standard 120 nC 16ns/194ns 400V, 20A, 14.6Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IGW50N60T

IGW50N60T

IGW50N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,262 -

RFQ

IGW50N60T

Ficha técnica

Bulk TrenchStop™ Active Trench Field Stop 600 V 90 A 150 A 2V @ 15V, 50A 333 W 1.2mJ (on), 1.4mJ (off) Standard 310 nC 26ns/299ns 400V, 50A, 7Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IKP20N65F5

IKP20N65F5

IKP20N65 - DISCRETE IGBT WITH AN

Infineon Technologies
2,040 -

RFQ

IKP20N65F5

Ficha técnica

Bulk TrenchStop™ 5 Active Trench Field Stop 650 V 42 A 60 A 2.1V @ 15V, 20A 125 W 160µJ (on), 60µJ (off) Standard 48 nC 20ns/165ns 400V, 10A, 32Ohm, 15V 53 ns -40°C ~ 175°C (TJ) Through Hole
IKB15N60T

IKB15N60T

IKB15N60 - DISCRETE IGBT WITH AN

Infineon Technologies
3,670 -

RFQ

IKB15N60T

Ficha técnica

Bulk * Active Trench Field Stop 600 V 26 A 45 A 2.05V @ 15V, 15A 130 W - Standard 87 nC 17ns/188ns 400V, 15A, 15Ohm, 15V 34 ns -40°C ~ 175°C (TJ) Surface Mount
IRG4BC30FD-SPBF

IRG4BC30FD-SPBF

IRG4BC30 - DISCRETE IGBT WITH AN

Infineon Technologies
3,448 -

RFQ

IRG4BC30FD-SPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4BC30FPBF

IRG4BC30FPBF

IRG4BC30F - 600V FAST 1-8 KHZ DI

Infineon Technologies
3,658 -

RFQ

IRG4BC30FPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IKB40N65EF5ATMA1

IKB40N65EF5ATMA1

IKB40N65 - INDUSTRY 14

Infineon Technologies
2,763 -

RFQ

IKB40N65EF5ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4BC20SPBF

IRG4BC20SPBF

IRG4BC20 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,576 -

RFQ

IRG4BC20SPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IGW30N65L5XKSA1

IGW30N65L5XKSA1

IGW30N65 - LOW V IGBT IN TRENCHS

Infineon Technologies
3,959 -

RFQ

IGW30N65L5XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4BC30FDPBF

IRG4BC30FDPBF

IRG4BC30 - DISCRETE IGBT WITH AN

Infineon Technologies
3,066 -

RFQ

IRG4BC30FDPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4PC40FPBF

IRG4PC40FPBF

IRG4PC40 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,028 -

RFQ

IRG4PC40FPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 1538 Record«Prev1... 727374757677Next»
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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