Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-GB150TH120U

VS-GB150TH120U

IGBT MOD 1200V 280A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,773 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 280 A 1147 W 3.6V @ 15V, 150A 5 mA 12.7 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
VS-GB150TS60NPBF

VS-GB150TS60NPBF

IGBT MOD 600V 138A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,069 -

RFQ

Bulk - Obsolete NPT Half Bridge 600 V 138 A 500 W 3V @ 15V, 150A 200 µA - Standard No 150°C (TJ) Chassis Mount
VS-GB15XP120KTPBF

VS-GB15XP120KTPBF

IGBT MODULE 1200V 30A 187W MTP

Vishay General Semiconductor - Diodes Division
2,024 -

RFQ

VS-GB15XP120KTPBF

Ficha técnica

Bulk - Active NPT Three Phase Inverter 1200 V 30 A 187 W 3.66V @ 15V, 30A 250 µA 1.95 nF @ 30 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-GB200LH120N

VS-GB200LH120N

IGBT MOD 1200V 370A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,913 -

RFQ

Bulk - Obsolete - Single 1200 V 370 A 1562 W 2.07V @ 15V, 200A (Typ) 100 nA 18 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB200NH120N

VS-GB200NH120N

IGBT MOD 1200V 420A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,493 -

RFQ

Bulk - Obsolete - Single 1200 V 420 A 1562 W 1.8V @ 15V, 200A (Typ) 5 mA 18 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB300NH120N

VS-GB300NH120N

IGBT MOD 1200V 500A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,727 -

RFQ

Bulk - Obsolete - Single 1200 V 500 A 1645 W 2.45V @ 15V, 300A 5 mA 21.2 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB300TH120N

VS-GB300TH120N

IGBT MOD 1200V 500A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,153 -

RFQ

VS-GB300TH120N

Ficha técnica

Bulk - Obsolete - Half Bridge 1200 V 500 A 1645 W 2.45V @ 15V, 300A 5 mA 21.2 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB300TH120U

VS-GB300TH120U

IGBT MOD 1200V 530A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,587 -

RFQ

VS-GB300TH120U

Ficha técnica

Bulk - Obsolete - Half Bridge 1200 V 530 A 2119 W 3.6V @ 15V, 300A 5 mA 25.3 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
VS-GB400AH120N

VS-GB400AH120N

IGBT MOD 1200V 650A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,477 -

RFQ

Bulk - Obsolete - Single 1200 V 650 A 2500 W 1.9V @ 15V, 400A (Typ) 5 mA 30 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB400AH120U

VS-GB400AH120U

IGBT MOD 1200V 550A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,621 -

RFQ

VS-GB400AH120U

Ficha técnica

Bulk - Obsolete - Single 1200 V 550 A 2841 W 3.6V @ 15V, 400A 5 mA 33.7 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
VS-GB400TH120N

VS-GB400TH120N

IGBT MOD 1200V 800A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,677 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 800 A 2604 W 1.9V @ 15V, 400A (Typ) 5 mA 32.7 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB400TH120U

VS-GB400TH120U

IGBT MOD 1200V 660A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,521 -

RFQ

VS-GB400TH120U

Ficha técnica

Bulk - Obsolete NPT Half Bridge 1200 V 660 A 2660 W 3.6V @ 15V, 400A 5 mA 33.7 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
VS-GB50LA120UX

VS-GB50LA120UX

IGBT MOD 1200V 84A 431W SOT227

Vishay General Semiconductor - Diodes Division
2,574 -

RFQ

VS-GB50LA120UX

Ficha técnica

Bulk - Obsolete NPT Single 1200 V 84 A 431 W 2.8V @ 15V, 50A 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB50LP120N

VS-GB50LP120N

IGBT MOD 1200V 100A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,305 -

RFQ

Bulk - Obsolete - Single 1200 V 100 A 446 W 1.7V @ 15V, 50A (Typ) 1 mA 4.29 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB50NA120UX

VS-GB50NA120UX

IGBT MOD 1200V 84A 431W SOT227

Vishay General Semiconductor - Diodes Division
3,805 -

RFQ

VS-GB50NA120UX

Ficha técnica

Bulk - Obsolete NPT Single 1200 V 84 A 431 W 2.8V @ 15V, 50A 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB50TP120N

VS-GB50TP120N

IGBT MOD 1200V 100A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,108 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 100 A 446 W 2.15V @ 15V, 50A 5 mA 4.29 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB50YF120N

VS-GB50YF120N

IGBT MOD 1200V 66A ECONO2 4PACK

Vishay General Semiconductor - Diodes Division
3,125 -

RFQ

Bulk - Obsolete - - 1200 V 66 A 330 W 4.5V @ 15V, 75A 250 µA - Standard No 150°C (TJ) Chassis Mount
VS-GB600AH120N

VS-GB600AH120N

IGBT MOD 1200V 910A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,300 -

RFQ

Bulk - Obsolete - Single 1200 V 910 A 3125 W 1.9V @ 15V, 600A (Typ) 5 mA 41 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB70LA60UF

VS-GB70LA60UF

IGBT MOD 600V 111A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,127 -

RFQ

VS-GB70LA60UF

Ficha técnica

Bulk - Obsolete NPT Single 600 V 111 A 447 W 2.44V @ 15V, 70A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB70NA60UF

VS-GB70NA60UF

IGBT MOD 600V 111A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,733 -

RFQ

VS-GB70NA60UF

Ficha técnica

Bulk - Obsolete NPT Single 600 V 111 A 447 W 2.44V @ 15V, 70A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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