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Transistores - IGBT - Módulos

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
APT46GA90JD40 IGBT MODULE 900V 87A 284W ISOTOP Microchip Technology	3,557	-	RFQ	Ficha técnica	Tube	POWER MOS 8™	Active	PT	Single	900 V	87 A	284 W	3.1V @ 15V, 47A	350 µA	4.17 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT75GT120JU3 IGBT MOD 1200V 100A 416W SOT227 Microchip Technology	3,968	-	RFQ	Ficha técnica	Bulk	-	Active	Trench Field Stop	Single	1200 V	100 A	416 W	2.1V @ 15V, 75A	5 mA	5.34 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT40GP60J IGBT 600V 86A 284W SOT227 Microchip Technology	3,170	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	86 A	284 W	2.7V @ 15V, 40A	250 µA	4.61 nF @ 25 V	Standard	No	-	Chassis Mount
APT47GA60JD40 IGBT 600V 87A 283W SOT-227 Microchip Technology	3,947	-	RFQ	Ficha técnica	Tube	POWER MOS 8™	Active	PT	Single	600 V	87 A	283 W	2.5V @ 15V, 47A	275 µA	6.32 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT150GN60J IGBT MOD 600V 220A 536W ISOTOP Microchip Technology	2,224	-	RFQ	Ficha técnica	Tube	-	Active	Trench Field Stop	Single	600 V	220 A	536 W	1.85V @ 15V, 150A	25 µA	9.2 nF @ 25 V	Standard	No	-55°C ~ 175°C (TJ)	Chassis Mount
APT50GP60J IGBT MOD 600V 100A 329W ISOTOP Microchip Technology	2,749	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	100 A	329 W	2.7V @ 15V, 50A	500 µA	5.7 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT50GP60JDQ2 IGBT MOD 600V 100A 329W ISOTOP Microchip Technology	3,390	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	100 A	329 W	2.7V @ 15V, 50A	525 µA	5.7 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT50GR120JD30 IGBT MOD 1200V 84A 417W SOT227 Microchip Technology	3,176	-	RFQ	Ficha técnica	Tube	-	Active	NPT	Single	1200 V	84 A	417 W	3.2V @ 15V, 50A	1.1 mA	5.55 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT25GLQ120JCU2 IGBT MOD 1200V 45A 170W SOT227 Microchip Technology	2,432	-	RFQ	Ficha técnica	Bulk	-	Active	Trench Field Stop	Single	1200 V	45 A	170 W	2.4V @ 15V, 25A	250 µA	1.43 nF @ 25 V	Standard	No	-55°C ~ 175°C (TJ)	Chassis, Stud Mount
APT100GN120J IGBT MOD 1200V 153A 446W ISOTOP Microchip Technology	2,015	-	RFQ	Ficha técnica	Tube	-	Active	Trench Field Stop	Single	1200 V	153 A	446 W	2.1V @ 15V, 100A	100 µA	6.5 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT35GP120J IGBT MOD 1200V 64A 284W ISOTOP Microchip Technology	2,915	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	1200 V	64 A	284 W	3.9V @ 15V, 35A	250 µA	3.24 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT65GP60J IGBT MOD 600V 130A 431W ISOTOP Microchip Technology	3,851	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	130 A	431 W	2.7V @ 15V, 65A	1 mA	7.4 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT100GT120JU3 IGBT MOD 1200V 140A 480W SOT227 Microchip Technology	3,033	-	RFQ	Ficha técnica	Bulk	-	Active	Trench Field Stop	Single	1200 V	140 A	480 W	2.1V @ 15V, 100A	5 mA	7.2 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT40GP90J IGBT MODULE 900V 68A 284W ISOTOP Microchip Technology	3,772	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	900 V	68 A	284 W	3.9V @ 15V, 40A	250 µA	3.3 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT65GP60JDQ2 IGBT 600V 130A 431W SOT227 Microchip Technology	3,993	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	130 A	431 W	2.7V @ 15V, 65A	1.25 mA	7.4 nF @ 25 V	Standard	No	-	Chassis Mount
APT40GLQ120JCU2 IGBT MOD 1200V 80A 312W SOT227 Microchip Technology	2,975	-	RFQ	Ficha técnica	Bulk	-	Active	Trench Field Stop	Single	1200 V	80 A	312 W	2.4V @ 15V, 40A	25 µA	2.3 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis, Stud Mount
APT40GP60JDQ2 IGBT MODULE 600V 86A 284W ISOTOP Microchip Technology	3,268	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	86 A	284 W	2.7V @ 15V, 40A	500 µA	4.61 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT40GP90JDQ2 IGBT MODULE 900V 64A 284W ISOTOP Microchip Technology	2,737	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	900 V	64 A	284 W	3.9V @ 15V, 40A	350 µA	3.3 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT45GP120J IGBT MOD 1200V 75A 329W ISOTOP Microchip Technology	3,881	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	1200 V	75 A	329 W	3.9V @ 15V, 45A	500 µA	3.94 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
APT80GP60JDQ3 IGBT 600V 151A 462W SOT227 Microchip Technology	3,193	-	RFQ	Ficha técnica	Tube	POWER MOS 7®	Active	PT	Single	600 V	151 A	462 W	2.7V @ 15V, 80A	1.25 mA	9.84 nF @ 25 V	Standard	No	-	Chassis Mount