Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-GT105NA120UX

VS-GT105NA120UX

IGBT MOD 1200V 134A 463W SOT227

Vishay General Semiconductor - Diodes Division
2,459 -

RFQ

VS-GT105NA120UX

Ficha técnica

Tube - Obsolete Trench Single 1200 V 134 A 463 W - 75 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GP300TD60S

VS-GP300TD60S

IGBT MOD 600V 580A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,205 -

RFQ

VS-GP300TD60S

Ficha técnica

Tube - Last Time Buy PT, Trench Half Bridge 600 V 580 A 1136 W 1.45V @ 15V, 300A 150 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GP400TD60S

VS-GP400TD60S

IGBT MOD 600V 758A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,648 -

RFQ

VS-GP400TD60S

Ficha técnica

Tube - Last Time Buy PT, Trench Half Bridge 600 V 758 A 1563 W 1.52V @ 15V, 400A 200 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-100MT060WSP

VS-100MT060WSP

IGBT MODULE 600V 107A 403W MTP

Vishay General Semiconductor - Diodes Division
3,623 -

RFQ

Tube - Obsolete - Single 600 V 107 A 403 W 2.49V @ 15V, 60A 100 µA 9.5 nF @ 30 V Single Phase Bridge Rectifier Yes 150°C (TJ) Through Hole
VS-150MT060WDF

VS-150MT060WDF

IGBT MOD 600V 138A 12MTP PRESS

Vishay General Semiconductor - Diodes Division
2,172 -

RFQ

Tube - Obsolete - Dual Buck Chopper 600 V 138 A 543 W 2.48V @ 15V, 80A 100 µA 14 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount
VS-GP100TS60SFPBF

VS-GP100TS60SFPBF

IGBT MOD 600V 337A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,993 -

RFQ

VS-GP100TS60SFPBF

Ficha técnica

Tube - Last Time Buy PT, Trench Half Bridge 600 V 337 A 781 W 1.34V @ 15V, 100A 150 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GT200TP065N

VS-GT200TP065N

IGBT MOD 650V 221A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,449 -

RFQ

Tube - Obsolete Trench Half Bridge 650 V 221 A 600 W 2.12V @ 15V, 200A 60 µA - Standard No -40°C ~ 175°C (TJ) Chassis Mount
VS-GP250SA60S

VS-GP250SA60S

IGBT MOD 600V 380A 893W SOT227

Vishay General Semiconductor - Diodes Division
3,267 -

RFQ

VS-GP250SA60S

Ficha técnica

Tube - Last Time Buy PT, Trench Single 600 V 380 A 893 W 1.3V @ 15V, 100A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
FD800R33KL2CKB5NOSA1

FD800R33KL2CKB5NOSA1

IGBT MOD 3300V 1500A 9800W

Infineon Technologies
3,987 -

RFQ

FD800R33KL2CKB5NOSA1

Ficha técnica

Tray - Obsolete - Dual Brake Chopper 3300 V 1500 A 9800 W 3.65V @ 15V, 800A 5 mA 97 nF @ 25 V Standard No -40°C ~ 125°C (TJ) Surface Mount
FZ1200R33KL2CNOSA1

FZ1200R33KL2CNOSA1

IGBT MODULE 3300V 2300A

Infineon Technologies
2,133 -

RFQ

FZ1200R33KL2CNOSA1

Ficha técnica

Tray - Obsolete - - 3300 V 2300 A 14500 W 3.65V @ 15V, 1200A 5 mA 145 nF @ 25 V Standard No -40°C ~ 125°C (TJ) Surface Mount
FZ1200R33KL2CB5NOSA1

FZ1200R33KL2CB5NOSA1

IGBT MODULE 3300V 2300A

Infineon Technologies
2,703 -

RFQ

FZ1200R33KL2CB5NOSA1

Ficha técnica

Tray - Obsolete - - 3300 V 2300 A 14500 W 3.65V @ 15V, 1200A 5 mA 145 nF @ 25 V Standard No -40°C ~ 125°C (TJ) Surface Mount
FZ800R33KL2CNOSA1

FZ800R33KL2CNOSA1

IGBT MOD 3300V 1500A 9800W

Infineon Technologies
3,967 -

RFQ

FZ800R33KL2CNOSA1

Ficha técnica

Tray,Tray - Obsolete - - 3300 V 1500 A 9800 W 3.65V @ 15V, 800A 5 mA 97 nF @ 25 V Standard No -40°C ~ 125°C (TJ) Chassis Mount
FZ800R33KL2CB5NOSA1

FZ800R33KL2CB5NOSA1

IGBT MOD 3300V 1500A 9800W

Infineon Technologies
3,118 -

RFQ

FZ800R33KL2CB5NOSA1

Ficha técnica

Tray - Obsolete - - 3300 V 1500 A 9800 W 3.65V @ 15V, 800A 5 mA 97 nF @ 25 V Standard No -40°C ~ 125°C (TJ) Chassis Mount
IXA220I650NA

IXA220I650NA

IGBT MOD 650V 225A 625W SOT227B

IXYS
3,480 -

RFQ

IXA220I650NA

Ficha técnica

Tube - Active PT Single 650 V 225 A 625 W - 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
IXB200I600NA

IXB200I600NA

IGBT MODULE 6000V SOT227

IXYS
2,046 -

RFQ

IXB200I600NA

Ficha técnica

Tube - Active - - - - - - - - - - - -
IXB80IF600NA

IXB80IF600NA

IGBT MODULE 600V 80A SOT227

IXYS
3,788 -

RFQ

IXB80IF600NA

Ficha técnica

Tube - Active - - - - - - - - - - - -
NXH80T120L2Q0SG

NXH80T120L2Q0SG

IGBT MODULE 1200V 65A 146W PIM20

onsemi
2,804 -

RFQ

Tray - Active - T-Type 1200 V 65 A 146 W 2.8V @ 15V, 80A 100 µA 1.99 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Through Hole
GSID100A120S5C1

GSID100A120S5C1

IGBT MOD 1200V 170A 650W

SemiQ
2,657 -

RFQ

GSID100A120S5C1

Ficha técnica

Bulk - Obsolete - Three Phase Inverter 1200 V 170 A 650 W 2.1V @ 15V, 100A 1 mA 13.7 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
GSID150A120S5C1

GSID150A120S5C1

IGBT MOD 1200V 285A 1087W

SemiQ
2,870 -

RFQ

GSID150A120S5C1

Ficha técnica

Bulk - Obsolete - Three Phase Inverter 1200 V 285 A 1087 W 2.1V @ 15V, 150A 1 mA 21.2 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
GSID200A120S5C1

GSID200A120S5C1

IGBT MODULE 1200V 335A

SemiQ
2,381 -

RFQ

GSID200A120S5C1

Ficha técnica

Bulk - Obsolete - Three Phase Inverter 1200 V 335 A - 2.1V @ 15V, 200A 1 mA 22.4 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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