Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK2932-E

2SK2932-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
10,001 -

RFQ

2SK2932-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HAT2198WP-EL-E

HAT2198WP-EL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
17,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK6026DPP-E0#T2

RJK6026DPP-E0#T2

MOSFET N-CH 600V 5A TO220FP

Renesas Electronics America Inc
40,100 -

RFQ

RJK6026DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) - 2.4Ohm @ 2.5A, 10V - 14 nC @ 10 V - 440 pF @ 25 V - 28.5W (Tc) 150°C (TJ) Through Hole
N0439N-S19-AY

N0439N-S19-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics America Inc
2,675 -

RFQ

N0439N-S19-AY

Ficha técnica

Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.3mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Through Hole
RJK0383DPA-09#J53

RJK0383DPA-09#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
12,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3993-ZK-E1-AZ

2SK3993-ZK-E1-AZ

MOSFET N-CH 25V 64A TO252

Renesas Electronics America Inc
20,000 -

RFQ

2SK3993-ZK-E1-AZ

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 64A (Tc) - 3.8mOhm @ 32A, 10V 3V @ 1mA 88 nC @ 10 V - 4770 pF @ 10 V - - - Surface Mount
N0602N-S19-AY

N0602N-S19-AY

MOSFET N-CH 60V 100A TO220-3

Renesas Electronics America Inc
1,785 -

RFQ

N0602N-S19-AY

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 10V 4.6mOhm @ 50A, 10V - 133 nC @ 10 V ±20V 7730 pF @ 25 V - 1.5W (Ta), 156W (Tc) 150°C (TJ) Through Hole
NP100N055PUK-E1-AY

NP100N055PUK-E1-AY

MOSFET N-CH 55V 100A TO263

Renesas Electronics America Inc
1,600 -

RFQ

NP100N055PUK-E1-AY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 3.25mOhm @ 50A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 7350 pF @ 25 V - 1.8W (Ta), 176W (Tc) 175°C (TJ) Surface Mount
UPA2721GR-E1-AT

UPA2721GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
342,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2721AGR-E1-AT

UPA2721AGR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
330,000 -

RFQ

UPA2721AGR-E1-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2732T1A-E1-AZ

UPA2732T1A-E1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
163,282 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP82N04MLG-S18-AY

NP82N04MLG-S18-AY

MOSFET N-CH 40V 82A TO220-3

Renesas Electronics America Inc
1,850 -

RFQ

NP82N04MLG-S18-AY

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) - 4.2mOhm @ 41A, 10V 2.5V @ 250µA 150 nC @ 10 V - 9 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C (TJ) Through Hole
RJK0702DPN-E0#T2

RJK0702DPN-E0#T2

MOSFET N-CH 75V 90A TO220AB

Renesas Electronics America Inc
14,917 -

RFQ

RJK0702DPN-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 90A (Ta) - 4.8mOhm @ 45A, 10V - 89 nC @ 10 V - 10 pF @ 10 V - 150W (Tc) 150°C (TJ) Through Hole
H5N2901LSTL-E

H5N2901LSTL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
10,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
H5N2901FN-E

H5N2901FN-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,157 -

RFQ

H5N2901FN-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2701GR-E1-AT

UPA2701GR-E1-AT

MOSFET N-CH 30V 14A 8PSOP

Renesas Electronics America Inc
20,000 -

RFQ

UPA2701GR-E1-AT

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 7.5mOhm @ 7A, 10V 2.5V @ 1mA 12 nC @ 5 V - 1200 pF @ 10 V - - - Surface Mount
UPA2702TP-E1-AZ

UPA2702TP-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
254,800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3404-Z-E1-AZ

2SK3404-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
31,368 -

RFQ

2SK3404-Z-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK03C0DPA-00#J53

RJK03C0DPA-00#J53

MOSFET N-CH 30V 70A 8WPAK

Renesas Electronics America Inc
463,509 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Ta) - 2mOhm @ 35A, 10V 2.5V @ 1mA 66 nC @ 4.5 V - 11000 pF @ 10 V - 65W (Tc) - Surface Mount
HAT2172N-EL-E

HAT2172N-EL-E

MOSFET N-CH 40V 30A 8LFPAK

Renesas Electronics America Inc
27,200 -

RFQ

HAT2172N-EL-E

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta) - 7.8mOhm @ 15A, 10V - 32 nC @ 10 V - 2420 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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