Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ557-T1B-A

2SJ557-T1B-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc
179,000 -

RFQ

2SJ557-T1B-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK03B8DPA-00#J53

RJK03B8DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
115,327 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 9.3mOhm @ 15A, 10V - 9 nC @ 4.5 V - 1330 pF @ 10 V - 28W (Tc) - Surface Mount
RJK03B9DPA-00#J53

RJK03B9DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
21,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 10.6mOhm @ 15A, 10V - 7.4 nC @ 4.5 V - 1110 pF @ 10 V - 25W (Tc) 150°C (TJ) Surface Mount
RJK03B7DPA-00#J53

RJK03B7DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
12,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 7.8mOhm @ 15A, 10V - 11 nC @ 4.5 V - 1670 pF @ 10 V - 30W (Tc) - Surface Mount
NP23N06YDG-E1-AY

NP23N06YDG-E1-AY

MOSFET N-CH 60V 23A 8HSON

Renesas Electronics America Inc
5,000 -

RFQ

NP23N06YDG-E1-AY

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 5V, 10V 27mOhm @ 11.5A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1800 pF @ 25 V - 1W (Ta), 60W (Tc) 175°C (TJ) Surface Mount
RJK03M8DNS-00#J5

RJK03M8DNS-00#J5

MOSFET N-CH 30V 30A 8HWSON

Renesas Electronics America Inc
315,000 -

RFQ

RJK03M8DNS-00#J5

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 5.2mOhm @ 15A, 10V - 14.5 nC @ 4.5 V - 2590 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RJK0352DSP-00#J0

RJK0352DSP-00#J0

MOSFET N-CH 30V 18A 8SOP

Renesas Electronics America Inc
182,500 -

RFQ

RJK0352DSP-00#J0

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) - 5.6mOhm @ 9A, 10V - 16 nC @ 4.5 V - 2440 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RJK0212DPA-00#J5A

RJK0212DPA-00#J5A

MOSFET N-CH WPAK

Renesas Electronics America Inc
27,000 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - Surface Mount
RJK0358DSP-00#J0

RJK0358DSP-00#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
787,500 -

RFQ

RJK0358DSP-00#J0

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2680T1E-E2-AT

UPA2680T1E-E2-AT

MOSFET N-CH 20V 3A 6MLP

Renesas Electronics America Inc
564,000 -

RFQ

UPA2680T1E-E2-AT

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) - 50mOhm @ 3A, 10V 2V @ 250µA 3.1 nC @ 4.5 V - 190 pF @ 10 V Schottky Diode (Isolated) - - Surface Mount
RJK0358DSP-01#J0

RJK0358DSP-01#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
225,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1959-T1-AZ

2SK1959-T1-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
16,377 -

RFQ

2SK1959-T1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP75N04VDK-E1-AY

NP75N04VDK-E1-AY

POWER TRS2

Renesas Electronics America Inc
2,500 -

RFQ

NP75N04VDK-E1-AY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 5.7mOhm @ 38A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2450 pF @ 25 V - 1.2W (Ta), 75W (Tc) 175°C Surface Mount
RJK0353DPA-01#J0B

RJK0353DPA-01#J0B

MOSFET N-CH 30V 35A 8WPAK

Renesas Electronics America Inc
2,500 -

RFQ

RJK0353DPA-01#J0B

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 5.2mOhm @ 17.5A, 10V 2.5V @ 1mA 14 nC @ 4.5 V ±20V 2180 pF @ 10 V - 40W (Tc) 150°C (TJ) Surface Mount
RJK03M5DPA-00#J5A

RJK03M5DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

RJK03M5DPA-00#J5A

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) 4.5V, 10V 6.5mOhm @ 15A, 10V - 10.4 nC @ 4.5 V ±20V 1890 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
UPA2807T1L-E1-AT

UPA2807T1L-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
144,000 -

RFQ

UPA2807T1L-E1-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK03C9DNS-00#J5

RJK03C9DNS-00#J5

POWER MOSFET

Renesas Electronics America Inc
50,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK03K7DPA-00#J5A

RJK03K7DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics America Inc
21,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2726UT1A-E1-AY

UPA2726UT1A-E1-AY

MOSFET N-CH 30V 20A 8DFN

Renesas Electronics America Inc
18,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) - 7mOhm @ 10A, 10V 2.5V @ 1mA 15 nC @ 5 V - 1720 pF @ 15 V - - - Surface Mount
RJK03K6DPA-00#J5A

RJK03K6DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics America Inc
90,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 1496 Record«Prev1... 5253545556575859...75Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario