Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDPF20N50FT

FDPF20N50FT

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,153 -

RFQ

FDPF20N50FT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 260mOhm @ 10A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3390 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS2672

FDS2672

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,852 -

RFQ

FDS2672

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 3.9A (Ta) 6V, 10V 70mOhm @ 3.9A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2535 pF @ 100 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC7572S

FDMC7572S

MOSFET N-CH 25V 22.5A/40A PWR33

Fairchild Semiconductor
2,816 -

RFQ

FDMC7572S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V 3V @ 1mA 44 nC @ 10 V ±20V 2705 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0310S

FDMS0310S

MOSFET N-CH 30V 19A/42A 8PQFN

Fairchild Semiconductor
2,749 -

RFQ

FDMS0310S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP32N20C

FQP32N20C

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,244 -

RFQ

FQP32N20C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF4N90CT

FQPF4N90CT

MOSFET N-CH 900V 4A TO220F

Fairchild Semiconductor
2,154 -

RFQ

FQPF4N90CT

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 960 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMBF170

MMBF170

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,411 -

RFQ

MMBF170

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3443DV

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Fairchild Semiconductor
3,177 -

RFQ

SI3443DV

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDT454P

NDT454P

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,631 -

RFQ

NDT454P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 50mOhm @ 5.9A, 10V 2.7V @ 250µA 40 nC @ 10 V ±20V 950 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDT451AN

NDT451AN

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
2,300 -

RFQ

NDT451AN

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 35mOhm @ 7.2A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 720 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDT3055

NDT3055

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,606 -

RFQ

NDT3055

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 10V 100mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 250 pF @ 30 V - 1.1W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDS351N

NDS351N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,129 -

RFQ

NDS351N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 250µA 3.5 nC @ 5 V ±20V 140 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDB6060L

NDB6060L

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,830 -

RFQ

NDB6060L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 5V, 10V 20mOhm @ 24A, 10V 2V @ 250µA 60 nC @ 5 V ±16V 2000 pF @ 25 V - 100W (Tc) -65°C ~ 175°C (TJ) Surface Mount
NDS9407

NDS9407

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,762 -

RFQ

NDS9407

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 150mOhm @ 3A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 732 pF @ 30 V - 1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NDT452AP

NDT452AP

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
2,320 -

RFQ

NDT452AP

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 65mOhm @ 5A, 10V 2.8V @ 250µA 30 nC @ 10 V ±20V 690 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDP6020P

NDP6020P

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,314 -

RFQ

NDP6020P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 4.5V 50mOhm @ 12A, 4.5V 1V @ 250µA 35 nC @ 5 V ±8V 1590 pF @ 10 V - 60W (Tc) -65°C ~ 175°C (TJ) Through Hole
FDC655BN-F40

FDC655BN-F40

N-CHANNEL POWERTRENCH MOSFET, LO

Fairchild Semiconductor
3,491 -

RFQ

FDC655BN-F40

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 25mOhm @ 6.3A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 620 pF @ 15 V - 800mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDF0610

NDF0610

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,181 -

RFQ

NDF0610

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 180mA (Ta) - 10Ohm @ 500mA, 10V 3.5V @ 1mA 1.43 nC @ 10 V - 60 pF @ 25 V - - - Through Hole
FDMA410NZT

FDMA410NZT

ULTRA THIN N-CHANNEL 1.5 V POWER

Fairchild Semiconductor
3,989 -

RFQ

FDMA410NZT

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) 1.5V, 4.5V 23mOhm @ 9.5A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1310 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS355AN-F169

NDS355AN-F169

N-CHANNEL LOGIC LEVEL ENHANCEMEN

Fairchild Semiconductor
3,378 -

RFQ

NDS355AN-F169

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V 2V @ 250µA 5 nC @ 5 V ±20V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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