Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB16N15TM

FQB16N15TM

MOSFET N-CH 150V 16.4A D2PAK

onsemi
2,254 -

RFQ

FQB16N15TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 16.4A (Tc) 10V 160mOhm @ 8.2A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 3.75W (Ta), 108W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA75617D3S

HUFA75617D3S

MOSFET N-CH 100V 16A TO252AA

onsemi
3,765 -

RFQ

HUFA75617D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 90mOhm @ 16A, 10V 4V @ 250µA 39 nC @ 20 V ±20V 570 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF4N60

FQPF4N60

MOSFET N-CH 600V 2.6A TO220F

onsemi
2,064 -

RFQ

FQPF4N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.6A (Tc) 10V 2.2Ohm @ 1.3A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 670 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N60CYDTU

FQPF5N60CYDTU

MOSFET N-CH 600V 4.5A TO220F-3

onsemi
3,025 -

RFQ

FQPF5N60CYDTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD4P40TF

FQD4P40TF

MOSFET P-CH 400V 2.7A DPAK

onsemi
2,934 -

RFQ

FQD4P40TF

Ficha técnica

Tape & Reel (TR) QFET® Obsolete P-Channel MOSFET (Metal Oxide) 400 V 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 680 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75617D3

HUF75617D3

MOSFET N-CH 100V 16A IPAK

onsemi
3,592 -

RFQ

HUF75617D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 90mOhm @ 16A, 10V 4V @ 250µA 39 nC @ 20 V ±20V 570 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76413P3

HUFA76413P3

MOSFET N-CH 60V 23A TO220-3

onsemi
3,162 -

RFQ

HUFA76413P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 49mOhm @ 23A, 10V 3V @ 250µA 20 nC @ 10 V ±16V 645 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU2N90TU

FQU2N90TU

MOSFET N-CH 900V 1.7A IPAK

onsemi
3,032 -

RFQ

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDY300NZ

FDY300NZ

MOSFET N-CH 20V 600MA SC89-3

onsemi
2,016 -

RFQ

FDY300NZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 600mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V 1.3V @ 250µA 1.1 nC @ 4.5 V ±12V 60 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDN304PZ

FDN304PZ

MOSFET P-CH 20V 2.4A SUPERSOT3

onsemi
2,305 -

RFQ

FDN304PZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 1.8V, 4.5V 52mOhm @ 2.4A, 4.5V 1.5V @ 250µA 20 nC @ 4.5 V ±8V 1310 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDN359AN

FDN359AN

MOSFET N-CH 30V 2.7A SUPERSOT3

onsemi
3,995 -

RFQ

FDN359AN

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 46mOhm @ 2.7A, 10V 3V @ 250µA 7 nC @ 5 V ±20V 480 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC610PZ

FDC610PZ

MOSFET P-CH 30V 4.9A SUPERSOT6

onsemi
3,150 -

RFQ

FDC610PZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 4.9A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V 3V @ 250µA 24 nC @ 10 V ±25V 1005 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF6N60C

FQPF6N60C

MOSFET N-CH 600V 5.5A TO220F

onsemi
3,673 -

RFQ

FQPF6N60C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI15P12TU

FQI15P12TU

MOSFET P-CH 120V 15A I2PAK

onsemi
3,268 -

RFQ

FQI15P12TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI6N60CTU

FQI6N60CTU

MOSFET N-CH 600V 5.5A I2PAK

onsemi
3,324 -

RFQ

FQI6N60CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC642P

FDC642P

MOSFET P-CH 20V 4A SUPERSOT6

onsemi
3,380 -

RFQ

FDC642P

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 65mOhm @ 4A, 4.5V 1.5V @ 250µA 16 nC @ 4.5 V ±8V 925 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF75617D3S

HUF75617D3S

MOSFET N-CH 100V 16A TO252AA

onsemi
2,814 -

RFQ

HUF75617D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 90mOhm @ 16A, 10V 4V @ 250µA 39 nC @ 20 V ±20V 570 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDW264P

FDW264P

MOSFET P-CH 20V 9.7A 8TSSOP

onsemi
2,098 -

RFQ

FDW264P

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.7A (Ta) 2.5V, 4.5V 10mOhm @ 9.7A, 4.5V 1.5V @ 250µA 135 nC @ 5 V ±12V 7225 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF2NA90

FQPF2NA90

MOSFET N-CH 900V 1.7A TO220F

onsemi
2,047 -

RFQ

FQPF2NA90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 5.8Ohm @ 850mA, 10V 5V @ 250µA 20 nC @ 10 V ±30V 680 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP4N90C

FQP4N90C

MOSFET N-CH 900V 4A TO220-3

onsemi
3,944 -

RFQ

FQP4N90C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 960 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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