Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MCH6606-TL-E

MCH6606-TL-E

MCH6606 - MOSFET

onsemi
3,593 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDMC013P030Z

FDMC013P030Z

P-CHANNEL POWERTRENCH MOSFET -30

onsemi
3,228 -

RFQ

FDMC013P030Z

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V 3V @ 250µA 135 nC @ 10 V ±25V 5785 pF @ 15 V - 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS7670

FDMS7670

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
2,533 -

RFQ

FDMS7670

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 42A (Tc) 4.5V, 10V 3.8mOhm @ 21A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4105 pF @ 15 V - 2.5W (Ta), 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF16N60NT

FCPF16N60NT

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,322 -

RFQ

FCPF16N60NT

Ficha técnica

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 8A, 10V 4V @ 250µA 52.3 nC @ 10 V ±30V 2170 pF @ 100 V - 35.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC606P

FDC606P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,619 -

RFQ

FDC606P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 4.5V 26mOhm @ 6A, 4.5V 1.5V @ 250µA 25 nC @ 4.5 V ±8V 1699 pF @ 6 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCH3382-TL-H

MCH3382-TL-H

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,796 -

RFQ

MCH3382-TL-H

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) 1.8V, 4.5V 198mOhm @ 1A, 4.5V - 2.3 nC @ 4.5 V ±9V 170 pF @ 6 V - 800mW (Ta) 150°C (TJ) Surface Mount
FDC6302P

FDC6302P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,449 -

RFQ

FDC6302P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NDS9407-G

NDS9407-G

NDS9407-G - MOSFET BULK

onsemi
2,833 -

RFQ

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 150mOhm @ 3A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 732 pF @ 30 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMA008P20LZ

FDMA008P20LZ

SINGLE P-CHANNEL POWERTRENCH MOS

onsemi
3,456 -

RFQ

FDMA008P20LZ

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 1.5V, 4.5V 13mOhm @ 2.5A, 4.5V 1.4V @ 250µA 39 nC @ 4.5 V ±8V 4383 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MMBF5434

MMBF5434

MMBF5434 - N-CHANNEL SWITCH

onsemi
3,537 -

RFQ

MMBF5434

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NVLJD4007NZTBG

NVLJD4007NZTBG

NVLJD4007 - DUAL N-CHANNEL SMALL

onsemi
3,926 -

RFQ

NVLJD4007NZTBG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTR1P02LT1H

NTR1P02LT1H

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,879 -

RFQ

NTR1P02LT1H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMC8015L

FDMC8015L

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi
3,103 -

RFQ

FDMC8015L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7A (Ta), 18A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 945 pF @ 20 V - 2.3W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP36N60N

FCP36N60N

POWER MOSFET, N-CHANNEL, SUPREMO

onsemi
3,773 -

RFQ

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA19N60

FQA19N60

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,120 -

RFQ

FQA19N60

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 18.5A (Tc) 10V 380mOhm @ 9.3A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCD5N60-F085

FCD5N60-F085

FCD5N60_F085 - N-CHANNEL SUPERFE

onsemi
3,406 -

RFQ

FCD5N60-F085

Ficha técnica

Bulk Automotive, AEC-Q101, SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 1.1Ohm @ 4.6A, 10V 5V @ 250µA 21 nC @ 10 V ±30V 570 pF @ 25 V - 54W (Tj) -55°C ~ 150°C (TJ) Surface Mount
NTMD4184PFR2G

NTMD4184PFR2G

DUAL P-CHANNEL FETKY POWER MOSFE

onsemi
2,878 -

RFQ

NTMD4184PFR2G

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 4.5V, 10V 95mOhm @ 3A, 10V 3V @ 250µA 4.2 nC @ 4.5 V ±20V 360 pF @ 10 V Schottky Diode (Isolated) 770mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDG327N

FDG327N

N-CHANNEL POWERTRENCH MOSFET, 20

onsemi
2,106 -

RFQ

FDG327N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 1.8V, 4.5V 90mOhm @ 1.5A, 4.5V 1.5V @ 250µA 6.3 nC @ 4.5 V ±8V 423 pF @ 10 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS8928A

FDS8928A

POWER FIELD-EFFECT TRANSISTOR, 5

onsemi
2,172 -

RFQ

FDS8928A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NVGS3443T1G

NVGS3443T1G

SINGLE P-CHANNEL POWER MOSFET -2

onsemi
2,556 -

RFQ

NVGS3443T1G

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.1A (Ta) - 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V - 565 pF @ 5 V - - -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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