| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                     
                    
                     
                     
                    
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                    FDC638APZ-SBMS001LV FET / WBG onsemi |  
                2,880 | - | 
                    
                    RFQ | 
                   
                   Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                     
                    
                     
                     
                    
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                    FDMC010N08LCN-CHANNEL SHIELDED GATE POWERTRE onsemi |  
                2,942 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 11A (Ta), 50A (Tc) | 4.5V, 10V | 10.9mOhm @ 16A, 10V | 3V @ 90µA | 31 nC @ 10 V | ±20V | 2135 pF @ 40 V | - | 2.3W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    NVGS4111PT1GNVGS4111 - SINGLE P-CHANNEL POWE onsemi |  
                3,352 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.7A (Ta) | 4.5V, 10V | 60mOhm @ 3.7A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 750 pF @ 15 V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDP038AN06A0POWER FIELD-EFFECT TRANSISTOR, 1 onsemi |  
                3,603 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124 nC @ 10 V | ±20V | 6400 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FCP11N60FPOWER FIELD-EFFECT TRANSISTOR, 1 onsemi |  
                2,826 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    NDT456PP-CHANNEL ENHANCEMENT MODE FIELD onsemi |  
                3,235 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4.5V, 10V | 30mOhm @ 7.5A, 10V | 3V @ 250µA | 67 nC @ 10 V | ±20V | 1440 pF @ 15 V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    NVD3055L104T4G-VF01NVD3055L104 - NFET DPAK 60V SPCL onsemi |  
                3,695 | - | 
                    
                    RFQ | 
                   
                   Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                     
                    
                     
                     
                    
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                    FDP039N08B-F102POWER FIELD-EFFECT TRANSISTOR, 1 onsemi |  
                2,782 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | ±20V | 9450 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FDS8876-F4030V N-CHANNEL POWERTRENCH MOSFET onsemi |  
                3,589 | - | 
                    
                    RFQ | 
                   
                   Tape & Reel (TR) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 8.2mOhm @ 12.5A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1650 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
                     
                    
                     
                     
                    
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                    HUF75321P3MOSFET N-CH 55V 35A TO220-3 onsemi |  
                760 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 10V | 34mOhm @ 35A, 10V | 4V @ 250µA | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQP2N90MOSFET N-CH 900V 2.2A TO220-3 onsemi |  
                360 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.2A (Tc) | 10V | 7.2Ohm @ 1.1A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQPF5N60CMOSFET N-CH 600V 4.5A TO220F onsemi |  
                240 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FDP8N50NZMOSFET N-CH 500V 8A TO220-3 onsemi |  
                980 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | UniFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FDPF390N15AMOSFET N-CH 150V 15A TO220F onsemi |  
                500 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 15A (Tc) | 10V | 40mOhm @ 15A, 10V | 4V @ 250µA | 18.6 nC @ 10 V | ±20V | 1285 pF @ 75 V | - | 22W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQPF19N20CMOSFET N-CH 200V 19A TO220F onsemi |  
                808 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQPF3N80CMOSFET N-CH 800V 3A TO220F onsemi |  
                790 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5 nC @ 10 V | ±30V | 705 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FCP600N60ZMOSFET N-CH 600V 7.4A TO220-3 onsemi |  
                372 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26 nC @ 10 V | ±20V | 1120 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQPF9P25MOSFET P-CH 250V 6A TO220F-3 onsemi |  
                320 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 6A (Tc) | 10V | 620mOhm @ 3A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FDPF12N50NZMOSFET N-CH 500V 11.5A TO220F onsemi |  
                185 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | UniFET-II™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 520mOhm @ 5.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    NTP6412ANGMOSFET N-CH 100V 58A TO220AB onsemi |  
                2,577 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 58A (Tc) | 10V | 18.2mOhm @ 58A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |