Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFD14N05LSM

RFD14N05LSM

MOSFET N-CH 50V 14A TO252AA

onsemi
2,552 -

RFQ

RFD14N05LSM

Ficha técnica

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 5V 100mOhm @ 14A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 670 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N7000RLRAG

2N7000RLRAG

MOSFET N-CH 60V 200MA TO92-3

onsemi
2,508 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 60 pF @ 25 V - 350mW (Tc) -55°C ~ 150°C (TJ) Through Hole
BS170RLRAG

BS170RLRAG

MOSFET N-CH 60V 500MA TO92-3

onsemi
3,267 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 60 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
BS107AG

BS107AG

MOSFET N-CH 200V 250MA TO92-3

onsemi
2,810 -

RFQ

BS107AG

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 250mA (Ta) 10V 6.4Ohm @ 250mA, 10V 3V @ 1mA - ±20V 60 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
MMFT960T1G

MMFT960T1G

MOSFET N-CH 60V 300MA SOT223

onsemi
2,251 -

RFQ

MMFT960T1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Tc) 10V 1.7Ohm @ 1A, 10V 3.5V @ 1mA 3.2 nC @ 10 V ±30V 65 pF @ 25 V - 800mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
MTP10N10ELG

MTP10N10ELG

MOSFET N-CH 100V 10A TO220AB

onsemi
2,825 -

RFQ

MTP10N10ELG

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 5V 220mOhm @ 5A, 5V 2V @ 250µA 15 nC @ 5 V ±15V 1040 pF @ 25 V - 1.75W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP12P10G

MTP12P10G

MOSFET P-CH 100V 12A TO220AB

onsemi
3,370 -

RFQ

MTP12P10G

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4.5V @ 1mA 50 nC @ 10 V ±20V 920 pF @ 25 V - 75W (Tc) -65°C ~ 150°C (TJ) Through Hole
MTP23P06VG

MTP23P06VG

MOSFET P-CH 60V 23A TO220AB

onsemi
4,243 -

RFQ

MTP23P06VG

Ficha técnica

Tube,Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 10V 120mOhm @ 11.5A, 10V 4V @ 250µA 50 nC @ 10 V ±15V 1620 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTP2P50EG

MTP2P50EG

MOSFET P-CH 500V 2A TO220AB

onsemi
2,378 -

RFQ

MTP2P50EG

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 500 V 2A (Tc) 10V 6Ohm @ 1A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1183 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP50P03HDLG

MTP50P03HDLG

MOSFET P-CH 30V 50A TO220AB

onsemi
3,778 -

RFQ

MTP50P03HDLG

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 5V 25mOhm @ 25A, 5V 2V @ 250µA 100 nC @ 5 V ±15V 4900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTW32N20EG

MTW32N20EG

MOSFET N-CH 200V 32A TO247

onsemi
3,755 -

RFQ

MTW32N20EG

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 75mOhm @ 16A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTB125N02RT4G

NTB125N02RT4G

MOSFET N-CH 24V 95A/120.5A D2PAK

onsemi
3,444 -

RFQ

NTB125N02RT4G

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 24 V 95A (Ta), 120.5A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2V @ 250µA 28 nC @ 4.5 V ±20V 3440 pF @ 20 V - 1.98W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTB65N02RT4G

NTB65N02RT4G

MOSFET N-CH 25V 7.6A D2PAK

onsemi
4,000 -

RFQ

NTB65N02RT4G

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 7.6A (Tc) 4.5V, 10V 8.2mOhm @ 30A, 10V 2V @ 250µA 9.5 nC @ 4.5 V ±20V 1330 pF @ 20 V - 1.04W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTB75N03RG

NTB75N03RG

MOSFET N-CH 25V 9.7A/75A D2PAK

onsemi
3,952 -

RFQ

NTB75N03RG

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.7A (Ta), 75A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 10 V ±20V 1333 pF @ 20 V - 1.25W (Ta), 74.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTB85N03T4G

NTB85N03T4G

MOSFET N-CH 28V 85A D2PAK

onsemi
3,431 -

RFQ

NTB85N03T4G

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 28 V 85A (Tc) 4.5V, 10V 6.8mOhm @ 40A, 10V 3V @ 250µA 29 nC @ 4.5 V ±20V 2150 pF @ 24 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD14N03R-1G

NTD14N03R-1G

MOSFET N-CH 25V 2.5A IPAK

onsemi
3,297 -

RFQ

NTD14N03R-1G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 2.5A (Ta) 4.5V, 10V 95mOhm @ 5A, 10V 2V @ 250µA 1.8 nC @ 5 V ±20V 115 pF @ 20 V - 1.04W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD23N03R-1G

NTD23N03R-1G

MOSFET N-CH 25V 3.8A/17.1A IPAK

onsemi
13,611 -

RFQ

NTD23N03R-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 3.8A (Ta), 17.1A (Tc) 4V, 5V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 1.14W (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD40N03R-1G

NTD40N03R-1G

MOSFET N-CH 25V 7.8A/32A IPAK

onsemi
351,580 -

RFQ

NTD40N03R-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 7.8A (Ta), 32A (Tc) 4.5V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA 5.78 nC @ 4.5 V ±20V 584 pF @ 20 V - 1.5W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD70N03R-1G

NTD70N03R-1G

MOSFET N-CH 25V 10A/32A IPAK

onsemi
141,782 -

RFQ

NTD70N03R-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10A (Ta), 32A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 5 V ±20V 1333 pF @ 20 V - 1.36W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD80N02-1G

NTD80N02-1G

MOSFET N-CH 24V 80A IPAK

onsemi
58,655 -

RFQ

NTD80N02-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 24 V 80A (Tc) 4.5V, 10V 5.8mOhm @ 80A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 2600 pF @ 20 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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