Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTD4909NA-35G

NTD4909NA-35G

MOSFET N-CH 30V 8.8A/41A IPAK

onsemi
23,773 -

RFQ

Bulk,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) - 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V - 1314 pF @ 15 V - - - Through Hole
NTD4909N-35G

NTD4909N-35G

MOSFET N-CH 30V 8.8A/41A IPAK

onsemi
19,225 -

RFQ

NTD4909N-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 1314 pF @ 15 V - 1.37W (Ta), 29.4W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4909N-1G

NTD4909N-1G

MOSFET N-CH 30V 8.8A/41A IPAK

onsemi
6,000 -

RFQ

NTD4909N-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 1314 pF @ 15 V - 1.37W (Ta), 29.4W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4906NA-35G

NTD4906NA-35G

MOSFET N-CH 30V 10.3A/54A IPAK

onsemi
22,125 -

RFQ

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta), 54A (Tc) - 5.5mOhm @ 30A, 10V 2.2V @ 250µA 24 nC @ 10 V - 1932 pF @ 15 V - - - Through Hole
NTD4905N-1G

NTD4905N-1G

MOSFET N-CH 30V 12A/67A IPAK

onsemi
2,930 -

RFQ

NTD4905N-1G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 67A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2.2V @ 250µA 33 nC @ 10 V ±20V 2340 pF @ 15 V - 1.4W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4904N-35G

NTD4904N-35G

MOSFET N-CH 30V 13A/79A IPAK

onsemi
22,250 -

RFQ

NTD4904N-35G

Ficha técnica

Bulk,Tube,Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 79A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2.2V @ 250µA 41 nC @ 10 V ±20V 3052 pF @ 15 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4905N-35G

NTD4905N-35G

MOSFET N-CH 30V 12A/67A IPAK

onsemi
2,615 -

RFQ

NTD4905N-35G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 67A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2.2V @ 250µA 33 nC @ 10 V ±20V 2340 pF @ 15 V - 1.4W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4857NA-1G

NTD4857NA-1G

MOSFET N-CH 25V 12A/78A IPAK

onsemi
5,700 -

RFQ

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 78A (Tc) - 5.7mOhm @ 30A, 10V 2.5V @ 250µA 32 nC @ 10 V - 1960 pF @ 12 V - - -55°C ~ 175°C (TJ) Through Hole
NTD4904N-1G

NTD4904N-1G

MOSFET N-CH 30V 79A SGL IPAK

onsemi
2,285 -

RFQ

NTD4904N-1G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 79A (Tc) - 3.7mOhm @ 30A, 10V 2.2V @ 250µA 41 nC @ 10 V - 3052 pF @ 15 V - - - Through Hole
NDF04N60ZG

NDF04N60ZG

MOSFET N-CH 600V 4.8A TO220FP

onsemi
57,902 -

RFQ

NDF04N60ZG

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.8A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDF10N60ZG

NDF10N60ZG

MOSFET N-CH 600V 10A TO220FP

onsemi
102,015 -

RFQ

NDF10N60ZG

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4.5V @ 100µA 68 nC @ 10 V ±30V 1645 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDF06N60ZG

NDF06N60ZG

MOSFET N-CH 600V 7.1A TO220FP

onsemi
3,578 -

RFQ

NDF06N60ZG

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.1A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 47 nC @ 10 V ±30V 1107 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C426NT1G

NTMFS5C426NT1G

MOSFET N-CH 40V 41A/235A 5DFN

onsemi
2,133 -

RFQ

NTMFS5C426NT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 250µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMYS1D2N04CLTWG

NTMYS1D2N04CLTWG

MOSFET N-CH 40V 44A/258A LFPAK4

onsemi
3,443 -

RFQ

NTMYS1D2N04CLTWG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 44A (Ta), 258A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 180µA 109 nC @ 10 V ±20V 6330 pF @ 20 V - 3.9W (Ta), 134W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMJS1D5N04CLTWG

NTMJS1D5N04CLTWG

MOSFET N-CH 40V 38A/200A 8LFPAK

onsemi
3,514 -

RFQ

NTMJS1D5N04CLTWG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 130µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMJS1D6N06CLTWG

NTMJS1D6N06CLTWG

MOSFET N-CH 60V 38A/250A 8LFPAK

onsemi
3,420 -

RFQ

NTMJS1D6N06CLTWG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 38A (Ta), 250A (Tc) 4.5V, 10V 1.36mOhm @ 50A, 10V 2V @ 250µA 91 nC @ 10 V ±20V 6660 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86180

FDMS86180

MOSFET N-CH 100V 151A POWER56

onsemi
3,267 -

RFQ

FDMS86180

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 151A (Tc) 6V, 10V 3.2mOhm @ 67A, 10V 4V @ 370µA 54 nC @ 6 V ±20V 6215 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD5C648NLT4G

NTD5C648NLT4G

MOSFET N-CH 60V 22A/91A DPAK

onsemi
2,935 -

RFQ

NTD5C648NLT4G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 91A (Tc) 4.5V, 10V 4.1mOhm @ 45A, 10V 2.1V @ 250µA 17 nC @ 10 V ±20V 2900 pF @ 30 V - 4.4W (Ta), 76W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB150N10

FDB150N10

MOSFET N-CH 100V 57A D2PAK

onsemi
2,789 -

RFQ

FDB150N10

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 15mOhm @ 49A, 10V 4.5V @ 250µA 69 nC @ 10 V ±20V 4760 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS8350L

FDMS8350L

MOSFET N-CH 40V 47A/200A POWER56

onsemi
2,085 -

RFQ

FDMS8350L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Ta), 200A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 242 nC @ 10 V ±20V 17500 pF @ 20 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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