Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MCH3420-TL-E

MCH3420-TL-E

MCH3420 - N-CHANNEL SILICON MOSF

onsemi
9,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 500mA (Ta) 4V, 10V 1.85mOhm @ 250mA, 10V 2.2V @ 1mA 3.2 nC @ 10 V ±20V 80 pF @ 20 V - 800mW (Ta) 150°C Surface Mount
IRFNL210BTA-FP001

IRFNL210BTA-FP001

IRFNL210 - POWER MOSFET, N-CHANN

onsemi
2,000 -

RFQ

IRFNL210BTA-FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 1A (Tc) 10V 1.5Ohm @ 500mA, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Through Hole
NTLJS3180PZTBG

NTLJS3180PZTBG

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,000 -

RFQ

NTLJS3180PZTBG

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.5V, 4.5V 38mOhm @ 3A, 4.5V 1V @ 250µA 19.5 nC @ 4.5 V ±8V 1100 pF @ 16 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C13NBT1G

NTMFS4C13NBT1G

NTMFS4C13N - MOSFET SO8FL 30V 38

onsemi
6,286 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta), 38A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 750mW (Ta), 21.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ECH8662-TL-H

ECH8662-TL-H

ECH8662 - MOSFET 2 N-CHANNEL ARR

onsemi
3,000 -

RFQ

ECH8662-TL-H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
TIP42CTU-T

TIP42CTU-T

TRANS BJTS PNP 100V 6A TO220-3 T

onsemi
6,765 -

RFQ

TIP42CTU-T

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SFT1443-W

SFT1443-W

MOSFET N-CH 100V 9A IPAK

onsemi
4,900 -

RFQ

SFT1443-W

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta) 4V, 10V 225mOhm @ 3A, 10V 2.6V @ 1mA 9.8 nC @ 10 V ±20V 490 pF @ 20 V - 1W (Ta), 19W (Tc) 150°C (TJ) Through Hole
NVD4810NT4G

NVD4810NT4G

NVD4810 - SINGLE N-CHANNEL POWER

onsemi
2,500 -

RFQ

NVD4810NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 11 nC @ 4.5 V ±20V 1350 pF @ 12 V - 1.4W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFT1446-H

SFT1446-H

MOSFET N-CH 60V 20A TP

onsemi
2,000 -

RFQ

SFT1446-H

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 4V, 10V 51mOhm @ 10A, 10V 2.6V @ 1mA 16 nC @ 10 V ±20V 750 pF @ 20 V - 1W (Ta), 23W (Tc) 150°C (TJ) Through Hole
SFT1423-TL-E

SFT1423-TL-E

MOSFET N-CH 500V 2A TP-FA

onsemi
3,500 -

RFQ

SFT1423-TL-E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2A (Ta) 4V, 10V 4.9Ohm @ 1A, 10V - 8.7 nC @ 10 V ±20V 175 pF @ 30 V - 1W (Ta), 20W (Tc) 150°C (TJ) Surface Mount
FDD1600N10ALZD

FDD1600N10ALZD

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi
2,400 -

RFQ

FDD1600N10ALZD

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 5V, 10V 160mOhm @ 3.4A, 10V 2.8V @ 250µA 3.61 nC @ 10 V ±20V 225 pF @ 50 V - 14.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ635-TL-E

2SJ635-TL-E

2SJ635 - P-CHANNEL SILICON MOSFE

onsemi
4,400 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 4V, 10V 60mOhm @ 6A, 10V 2.6V @ 1mA 45 nC @ 10 V ±20V 2200 pF @ 20 V - 1W (Ta), 30W (Tc) 150°C Through Hole
NVD4806NT4G-VF01

NVD4806NT4G-VF01

NVD4806 - SINGLE N-CHANNEL POWER

onsemi
2,500 -

RFQ

NVD4806NT4G-VF01

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) 4.5V, 11.5V 6mOhm @ 30A, 11.5V 2.5V @ 250µA 37 nC @ 11.5 V ±20V 2142 pF @ 12 V - 1.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CPH6424-TL-E

CPH6424-TL-E

CPH6424 - N-CHANNEL SILICON MOSF

onsemi
3,000 -

RFQ

CPH6424-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MPF960

MPF960

MOSFET N-CH 60V 2A TO92-3

onsemi
3,569 -

RFQ

MPF960

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 10V 1.7Ohm @ 1A, 10V 3.5V @ 1mA - ±20V 70 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
MPF990

MPF990

MOSFET N-CH 90V 2A TO92-3

onsemi
2,560 -

RFQ

MPF990

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 2A (Ta) 10V 2Ohm @ 1A, 10V 3.5V @ 1mA - ±20V 70 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
NTD80N02-001

NTD80N02-001

MOSFET N-CH 24V 80A IPAK

onsemi
527,401 -

RFQ

NTD80N02-001

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 24 V 80A (Tc) 4.5V, 10V 5.8mOhm @ 80A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 2600 pF @ 20 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTP75N06

NTP75N06

MOSFET N-CH 60V 75A TO220AB

onsemi
2,094 -

RFQ

NTP75N06

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Ta) 10V 9.5mOhm @ 37.5A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 4510 pF @ 25 V - 2.4W (Ta), 214W (Tj) -55°C ~ 175°C (TJ) Through Hole
2N7002LT1

2N7002LT1

MOSFET N-CH 60V 115MA SOT23-3

onsemi
2,788 -

RFQ

2N7002LT1

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) - 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - - 50 pF @ 25 V - - - Surface Mount
MMBF170LT1

MMBF170LT1

MOSFET N-CH 60V 500MA SOT23-3

onsemi
3,660 -

RFQ

MMBF170LT1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 60 pF @ 10 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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