Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS4C05NT1G

NVMFS4C05NT1G

MOSFET N-CH 30V 24.7A/116A 5DFN

onsemi
3,770 -

RFQ

NVMFS4C05NT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 24.7A (Ta), 116A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 1972 pF @ 15 V - 3.61W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD10AN06A0

FDD10AN06A0

MOSFET N-CH 60V 11A/50A TO252AA

onsemi
3,815 -

RFQ

FDD10AN06A0

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 50A (Tc) 6V, 10V 10.5mOhm @ 50A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1840 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD3690

FDD3690

MOSFET N-CH 100V 22A DPAK

onsemi
3,599 -

RFQ

FDD3690

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 6V, 10V 64mOhm @ 5.4A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 1514 pF @ 50 V - 3.8W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4808N-1G

NTD4808N-1G

MOSFET N-CH 30V 10A/63A IPAK

onsemi
2,443 -

RFQ

NTD4808N-1G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4808N-35G

NTD4808N-35G

MOSFET N-CH 30V 10A/63A IPAK

onsemi
7,105 -

RFQ

NTD4808N-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4808NT4G

NTD4808NT4G

MOSFET N-CH 30V 10A/63A DPAK

onsemi
22,486 -

RFQ

NTD4808NT4G

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4809N-1G

NTD4809N-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
6,748 -

RFQ

NTD4809N-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809N-35G

NTD4809N-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
62,400 -

RFQ

NTD4809N-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NA-1G

NTD4809NA-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
86,000 -

RFQ

NTD4809NA-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NA-35G

NTD4809NA-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
2,840 -

RFQ

NTD4809NA-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NAT4G

NTD4809NAT4G

MOSFET N-CH 30V 9.6A/58A DPAK

onsemi
193,200 -

RFQ

NTD4809NAT4G

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4809NH-1G

NTD4809NH-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
3,624 -

RFQ

NTD4809NH-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NH-35G

NTD4809NH-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
58,847 -

RFQ

NTD4809NH-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NH-1G

NTD4810NH-1G

MOSFET N-CH 30V 9A/54A IPAK

onsemi
3,665 -

RFQ

NTD4810NH-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NH-35G

NTD4810NH-35G

MOSFET N-CH 30V 9A/54A IPAK

onsemi
3,250 -

RFQ

NTD4810NH-35G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NHT4G

NTD4810NHT4G

MOSFET N-CH 30V 9A/54A DPAK

onsemi
5,000 -

RFQ

NTD4810NHT4G

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4813N-1G

NTD4813N-1G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
6,645 -

RFQ

NTD4813N-1G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 7.9 nC @ 4.5 V ±20V 860 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4813N-35G

NTD4813N-35G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
6,150 -

RFQ

NTD4813N-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 7.9 nC @ 4.5 V ±20V 860 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4813NH-1G

NTD4813NH-1G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
2,919 -

RFQ

NTD4813NH-1G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4813NH-35G

NTD4813NH-35G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
14,455 -

RFQ

NTD4813NH-35G

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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