Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHD18NQ10T,118

PHD18NQ10T,118

MOSFET N-CH 100V 18A DPAK

NXP USA Inc.
3,453 -

RFQ

PHD18NQ10T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 633 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHP45NQ10TA,127

PHP45NQ10TA,127

MOSFET N-CH 100V 47A TO220AB

NXP USA Inc.
3,590 -

RFQ

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) - 25mOhm @ 25A, 10V 4V @ 1mA 61 nC @ 10 V - 2600 pF @ 25 V - - - Through Hole
BUK7628-100A/C,118

BUK7628-100A/C,118

MOSFET N-CH 100V 47A D2PAK

NXP USA Inc.
3,593 -

RFQ

BUK7628-100A/C,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 1mA - ±20V 3100 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9240-100A/C1,11

BUK9240-100A/C1,11

MOSFET N-CH 100V 33A DPAK

NXP USA Inc.
3,196 -

RFQ

BUK9240-100A/C1,11

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 4.5V, 10V 38.6mOhm @ 25A, 10V 2V @ 1mA - ±10V 3072 pF @ 25 V - 114W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9237-55A/C1,118

BUK9237-55A/C1,118

MOSFET N-CH 55V 32A DPAK

NXP USA Inc.
3,199 -

RFQ

BUK9237-55A/C1,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 4.5V, 10V 33mOhm @ 15A, 10V 2V @ 1mA 17.6 nC @ 5 V ±15V 1236 pF @ 25 V - 77W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9222-55A/C1,118

BUK9222-55A/C1,118

MOSFET N-CH 55V 48A DPAK

NXP USA Inc.
2,409 -

RFQ

BUK9222-55A/C1,118

Ficha técnica

Tape & Reel (TR),Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 48A (Tc) 4.5V, 10V 20mOhm @ 25A, 10V 2V @ 1mA - ±15V 2210 pF @ 25 V - 103W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7210-55B/C1,118

BUK7210-55B/C1,118

MOSFET N-CH 55V 75A DPAK

NXP USA Inc.
2,449 -

RFQ

Tape & Reel (TR) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 35 nC @ 10 V ±20V 2453 pF @ 25 V - 167W (Tc) -55°C ~ 185°C (TJ) Surface Mount
PH4530AL,115

PH4530AL,115

MOSFET N-CH 30V LFPAK56 PWR-SO8

NXP USA Inc.
3,017 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
2N7002PM,315

2N7002PM,315

MOSFET N-CH 60V 300MA DFN1006-3

NXP USA Inc.
3,736 -

RFQ

2N7002PM,315

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 5V, 10V - - - ±20V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK6507-55C,127

BUK6507-55C,127

MOSFET N-CH 55V 100A TO220AB

NXP USA Inc.
4,728 -

RFQ

BUK6507-55C,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 7mOhm @ 25A, 10V 2.8V @ 1mA 82 nC @ 10 V ±16V 5160 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK6510-75C,127

BUK6510-75C,127

MOSFET N-CH 75V 77A TO220AB

NXP USA Inc.
4,291 -

RFQ

BUK6510-75C,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 77A (Tc) 4.5V, 10V 10.4mOhm @ 25A, 10V 2.8V @ 1mA 81 nC @ 10 V ±16V 5251 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R2-55C,127

BUK653R2-55C,127

MOSFET N-CH 55V 120A TO220AB

NXP USA Inc.
3,726 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 4.5V, 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R4-40C,127

BUK653R4-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.
2,950 -

RFQ

BUK653R4-40C,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.6mOhm @ 25A, 10V 2.8V @ 1mA 125 nC @ 10 V ±16V 8020 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R5-55C,127

BUK653R5-55C,127

MOSFET N-CH 55V 120A TO220AB

NXP USA Inc.
4,931 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 4.5V, 10V 3.9mOhm @ 25A, 10V 2.8V @ 1mA 191 nC @ 10 V ±16V 11516 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R7-30C,127

BUK653R7-30C,127

MOSFET N-CH 30V 100A TO220AB

NXP USA Inc.
5,180 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 25A, 10V 2.8V @ 1mA 78 nC @ 10 V ±16V 4707 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK654R0-75C,127

BUK654R0-75C,127

MOSFET N-CH 75V 120A TO220AB

NXP USA Inc.
3,883 -

RFQ

BUK654R0-75C,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V 2.8V @ 1mA 234 nC @ 10 V ±16V 15450 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK654R6-55C,127

BUK654R6-55C,127

MOSFET N-CH 55V 100A TO220AB

NXP USA Inc.
3,856 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 5.4mOhm @ 25A, 10V 2.8V @ 1mA 124 nC @ 10 V ±16V 7750 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK655R0-75C,127

BUK655R0-75C,127

MOSFET N-CH 75V 120A TO220AB

NXP USA Inc.
2,427 -

RFQ

Bulk,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 5.3mOhm @ 25A, 10V 2.8V @ 1mA 177 nC @ 10 V ±16V 11400 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7Y08-40B/C,115

BUK7Y08-40B/C,115

MOSFET N-CH 40V 75A LFPAK56

NXP USA Inc.
3,565 -

RFQ

BUK7Y08-40B/C,115

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 36.3 nC @ 10 V ±20V 2040 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y25-40B/C,115

BUK7Y25-40B/C,115

MOSFET N-CH 40V 35.3A LFPAK56

NXP USA Inc.
2,119 -

RFQ

BUK7Y25-40B/C,115

Ficha técnica

Tape & Reel (TR),Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 35.3A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 1mA 12.1 nC @ 10 V ±20V 693 pF @ 25 V - 59.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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