Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHX8NQ11T,127

PHX8NQ11T,127

MOSFET N-CH 110V 7.5A TO220F

NXP USA Inc.
2,340 -

RFQ

PHX8NQ11T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 110 V 7.5A (Tc) 10V 180mOhm @ 6A, 10V 4V @ 1mA 14.7 nC @ 10 V ±20V 360 pF @ 25 V - 27.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMG370XN,115

PMG370XN,115

MOSFET N-CH 30V 960MA 6TSSOP

NXP USA Inc.
111,000 -

RFQ

Tape & Reel (TR),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 960mA (Ta) 2.5V, 4.5V 440mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.65 nC @ 4.5 V ±12V 37 pF @ 25 V - 690mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN28UN,165

PMN28UN,165

MOSFET N-CH 12V 5.7A 6TSOP

NXP USA Inc.
3,590 -

RFQ

PMN28UN,165

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 12 V 5.7A (Tc) 1.8V, 4.5V 34mOhm @ 2A, 4.5V 700mV @ 1mA (Typ) 10.1 nC @ 4.5 V ±8V 740 pF @ 10 V - 1.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN45EN,165

PMN45EN,165

MOSFET N-CH 30V 5.2A 6TSOP

NXP USA Inc.
2,929 -

RFQ

PMN45EN,165

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.2A (Tc) 4.5V, 10V 40mOhm @ 3A, 10V 2V @ 1mA 6.1 nC @ 4.5 V 20V 495 pF @ 25 V - 1.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMR780SN,115

PMR780SN,115

MOSFET N-CH 60V 550MA SC75

NXP USA Inc.
3,875 -

RFQ

PMR780SN,115

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 550mA (Ta) 4.5V, 10V 920mOhm @ 300mA, 10V 3V @ 250µA 1.05 nC @ 10 V ±20V 23 pF @ 30 V - 530mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN004-36B,118

PSMN004-36B,118

MOSFET N-CH 36V 75A D2PAK

NXP USA Inc.
2,588 -

RFQ

PSMN004-36B,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 36 V 75A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 97 nC @ 5 V ±15V 6000 pF @ 20 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN004-55W,127

PSMN004-55W,127

MOSFET N-CH 55V 100A TO247-3

NXP USA Inc.
3,316 -

RFQ

PSMN004-55W,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V 2V @ 1mA 226 nC @ 5 V ±15V 13000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN005-25D,118

PSMN005-25D,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.
2,816 -

RFQ

PSMN005-25D,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 5.8mOhm @ 25A, 10V 2V @ 1mA 60 nC @ 5 V ±15V 3500 pF @ 20 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN005-55P,127

PSMN005-55P,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,130 -

RFQ

PSMN005-55P,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2V @ 1mA 103 nC @ 5 V ±15V 6500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN009-100W,127

PSMN009-100W,127

MOSFET N-CH 100V 100A TO247-3

NXP USA Inc.
2,201 -

RFQ

PSMN009-100W,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 214 nC @ 10 V ±20V 9000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN010-55D,118

PSMN010-55D,118

MOSFET N-CH 55V 75A DPAK

NXP USA Inc.
2,618 -

RFQ

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 10.5mOhm @ 25A, 10V 2V @ 1mA 55 nC @ 5 V ±15V 3300 pF @ 20 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN020-150W,127

PSMN020-150W,127

MOSFET N-CH 150V 73A TO247-3

NXP USA Inc.
2,487 -

RFQ

PSMN020-150W,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 73A (Tc) 10V 20mOhm @ 25A, 10V 4V @ 1mA 227 nC @ 10 V ±20V 9537 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN040-200W,127

PSMN040-200W,127

MOSFET N-CH 200V 50A TO247-3

NXP USA Inc.
2,580 -

RFQ

PSMN040-200W,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 40mOhm @ 25A, 10V 4V @ 1mA 183 nC @ 10 V ±20V 9530 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4420DY,518

SI4420DY,518

MOSFET N-CH 30V SOT96-1

NXP USA Inc.
3,439 -

RFQ

SI4420DY,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Tj) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 120 nC @ 10 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4800,518

SI4800,518

MOSFET N-CH 30V 9A 8SO

NXP USA Inc.
3,455 -

RFQ

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 18.5mOhm @ 9A, 10V 800mV @ 250µA 11.8 nC @ 5 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI9410DY,518

SI9410DY,518

MOSFET N-CH 30V SOT96-1

NXP USA Inc.
2,960 -

RFQ

SI9410DY,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Tj) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 50 nC @ 10 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK75150-55A,127

BUK75150-55A,127

MOSFET N-CH 55V 11A TO220AB

NXP USA Inc.
2,433 -

RFQ

BUK75150-55A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 150mOhm @ 5A, 10V 4V @ 1mA 5.5 nC @ 10 V ±20V 322 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7523-75A,127

BUK7523-75A,127

MOSFET N-CH 75V 53A TO220AB

NXP USA Inc.
3,287 -

RFQ

BUK7523-75A,127

Ficha técnica

Bulk,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 53A (Tc) 10V 23mOhm @ 25A, 10V 4V @ 1mA - ±20V 2385 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7524-55A,127

BUK7524-55A,127

MOSFET N-CH 55V 47A TO220AB

NXP USA Inc.
3,137 -

RFQ

BUK7524-55A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 10V 24mOhm @ 25A, 10V 4V @ 1mA - ±20V 1310 pF @ 25 V - 106W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK752R7-30B,127

BUK752R7-30B,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.
3,821 -

RFQ

BUK752R7-30B,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.7mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 6212 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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