Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STB27NM60ND

STB27NM60ND

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics
3,141 -

RFQ

STB27NM60ND

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) Surface Mount
STW38N65M5-4

STW38N65M5-4

MOSFET N-CH 650V 30A TO247-4L

STMicroelectronics
3,184 -

RFQ

STW38N65M5-4

Ficha técnica

Tube MDmesh™ M5 Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP50N65DM6

STP50N65DM6

MOSFET N-CH 650V 33A TO220

STMicroelectronics
100 -

RFQ

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 91mOhm @ 16.5A, 10V 4.75V @ 250µA 52.5 nC @ 10 V ±25V 2300 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STHU32N65DM6AG

STHU32N65DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 650 V

STMicroelectronics
100 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Tc) 10V 97mOhm @ 18.5A, 10V 4.75V @ 250µA 52.6 nC @ 10 V ±25V 2211 pF @ 100 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STWA65N60DM6

STWA65N60DM6

MOSFET N-CH 600V 38A TO247

STMicroelectronics
3,031 -

RFQ

STWA65N60DM6

Ficha técnica

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - - - - - - - - - Through Hole
STW57N65M5-4

STW57N65M5-4

MOSFET N-CH 650V 42A TO247-4L

STMicroelectronics
2,928 -

RFQ

STW57N65M5-4

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
STWA68N60M6

STWA68N60M6

MOSFET N-CH 600V 63A TO247

STMicroelectronics
3,735 -

RFQ

STWA68N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 63A (Tc) 10V 41mOhm @ 31.5A, 10V 4.75V @ 250µA 106 nC @ 10 V ±25V 4360 pF @ 100 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA75N60M6

STWA75N60M6

MOSFET N-CH 600V 72A TO247

STMicroelectronics
2,352 -

RFQ

STWA75N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 36mOhm @ 36A, 10V 4.75V @ 250µA 106 nC @ 10 V ±25V 4850 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA70N65DM6

STWA70N65DM6

MOSFET N-CH 650V 68A TO247

STMicroelectronics
3,495 -

RFQ

STWA70N65DM6

Ficha técnica

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 650 V 68A (Tc) 10V 40mOhm @ 34A, 10V 4.75V @ 250µA 125 nC @ 10 V ±25V 4900 pF @ 100 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW62NM60N

STW62NM60N

MOSFET N-CH 600V 65A TO247

STMicroelectronics
2,460 -

RFQ

STW62NM60N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 65A (Tc) 10V 49mOhm @ 32.5A, 10V 4V @ 250µA 174 nC @ 10 V ±25V 5800 pF @ 100 V - 450W (Tc) 150°C (TJ) Through Hole
SCT040H65G3AG

SCT040H65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics
2,364 -

RFQ

SCT040H65G3AG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 30A (Tc) 15V, 18V 55mOhm @ 20A, 18V 4.2V @ 1mA 39.5 nC @ 18 V +18V, -5V 920 pF @ 400 V - 221W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SCTH50N120-7

SCTH50N120-7

PTD WBG & POWER RF

STMicroelectronics
2,380 -

RFQ

SCTH50N120-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete - - - - - - - - - - - - - -
SCTH70N120G2V-7

SCTH70N120G2V-7

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics
3,296 -

RFQ

SCTH70N120G2V-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 18V 30mOhm @ 50A, 18V 4.9V @ 1mA 150 nC @ 18 V +22V, -10V 3540 pF @ 800 V - 469W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP60NE06-16

STP60NE06-16

MOSFET N-CH 60V 60A TO220AB

STMicroelectronics
2,944 -

RFQ

STP60NE06-16

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 16mOhm @ 30A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 6200 pF @ 25 V - 150W (Tc) 175°C (TJ) Through Hole
STW13NB60

STW13NB60

MOSFET N-CH 600V 13A TO247-3

STMicroelectronics
3,200 -

RFQ

STW13NB60

Ficha técnica

Tube PowerMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 540mOhm @ 6.5A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 2600 pF @ 25 V - 190W (Tc) 150°C (TJ) Through Hole
STP80NE06-10

STP80NE06-10

MOSFET N-CH 60V 80A TO220AB

STMicroelectronics
3,169 -

RFQ

STP80NE06-10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 10mOhm @ 40A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10000 pF @ 25 V - 150W (Tc) 175°C (TJ) Through Hole
IRF530

IRF530

MOSFET N-CH 100V 14A TO220AB

STMicroelectronics
2,246 -

RFQ

IRF530

Ficha técnica

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 7A, 10V 4V @ 250µA 21 nC @ 10 V ±20V 458 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD50NH02LT4

STD50NH02LT4

MOSFET N-CH 24V 50A DPAK

STMicroelectronics
3,720 -

RFQ

STD50NH02LT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 24 V 50A (Tc) 5V, 10V 10.5mOhm @ 25A, 10V 1.8V @ 250µA 24 nC @ 10 V ±20V 1400 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STS25NH3LL

STS25NH3LL

MOSFET N-CH 30V 25A 8SO

STMicroelectronics
3,864 -

RFQ

STS25NH3LL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 3.5mOhm @ 12.5A, 10V 1V @ 250µA 40 nC @ 4.5 V ±18V 4450 pF @ 25 V - 3.2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD60NF3LLT4

STD60NF3LLT4

MOSFET N-CH 30V 60A DPAK

STMicroelectronics
2,161 -

RFQ

STD60NF3LLT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 9.5mOhm @ 30A, 10V 1V @ 250µA 40 nC @ 4.5 V ±16V 2210 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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