Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP10NM60N

STP10NM60N

MOSFET N-CH 600V 10A TO220AB

STMicroelectronics
860 -

RFQ

STP10NM60N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 550mOhm @ 4A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 540 pF @ 50 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF10NM60N

STF10NM60N

MOSFET N-CH 600V 10A TO220FP

STMicroelectronics
487 -

RFQ

STF10NM60N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 550mOhm @ 4A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 540 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL6N3LLH6

STL6N3LLH6

MOSFET N-CH 30V POWERFLAT

STMicroelectronics
2,709 -

RFQ

STL6N3LLH6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VI Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 25mOhm @ 3A, 10V 1V @ 250µA (Min) 3.6 nC @ 4.5 V ±20V 283 pF @ 24 V - 2.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP80NF12

STP80NF12

MOSFET N-CH 120V 80A TO220AB

STMicroelectronics
248 -

RFQ

STP80NF12

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 120 V 80A (Tc) 10V 18mOhm @ 40A, 10V 2V @ 250µA 189 nC @ 10 V ±20V 4300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP10NK60Z

STP10NK60Z

MOSFET N-CH 600V 10A TO220AB

STMicroelectronics
574 -

RFQ

STP10NK60Z

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 4.5A, 10V 4.5V @ 250µA 70 nC @ 10 V ±30V 1370 pF @ 25 V - 115W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF14NM50N

STF14NM50N

MOSFET N-CH 500V 12A TO220FP

STMicroelectronics
783 -

RFQ

STF14NM50N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 100µA 27 nC @ 10 V ±25V 816 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STH275N8F7-6AG

STH275N8F7-6AG

MOSFET N-CH 80V 180A H2PAK-6

STMicroelectronics
2,000 -

RFQ

STH275N8F7-6AG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.1mOhm @ 90A, 10V 4.5V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP33N65M2

STP33N65M2

MOSFET N-CH 650V 24A TO220

STMicroelectronics
315 -

RFQ

STP33N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 140mOhm @ 12A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
STW40NF20

STW40NF20

MOSFET N-CH 200V 40A TO247-3

STMicroelectronics
1,722 -

RFQ

STW40NF20

Ficha técnica

Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Tc) 10V 45mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 10 V ±20V 2500 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF33N65M2

STF33N65M2

MOSFET N-CH 650V 24A TO220FP

STMicroelectronics
598 -

RFQ

STF33N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 140mOhm @ 12A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 34W (Tc) 150°C (TJ) Through Hole
STD2LN60K3

STD2LN60K3

MOSFET N CH 600V 2A DPAK

STMicroelectronics
2,864 -

RFQ

STD2LN60K3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.5Ohm @ 1A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 235 pF @ 50 V - 45W (Tc) 150°C (TJ) Surface Mount
STF20N65M5

STF20N65M5

MOSFET N-CH 650V 18A TO220FP

STMicroelectronics
701 -

RFQ

STF20N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1345 pF @ 100 V - 30W (Tc) 150°C (TJ) Through Hole
STL6N2VH5

STL6N2VH5

MOSFET N-CH 20V POWERFLAT

STMicroelectronics
2,901 -

RFQ

STL6N2VH5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ V Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tj) 2.5V, 4.5V 30mOhm @ 3A, 4.5V 700mV @ 250µA (Min) 6 nC @ 4.5 V ±8V 550 pF @ 16 V - 2.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU3N45K3

STU3N45K3

MOSFET N-CH 450V 1.8A IPAK

STMicroelectronics
3,244 -

RFQ

STU3N45K3

Ficha técnica

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 450 V 1.8A (Tc) 10V 3.8Ohm @ 500mA, 10V 4.5V @ 50µA 6 nC @ 10 V ±30V 150 pF @ 25 V - 27W (Tc) - Through Hole
STB47N60DM6AG

STB47N60DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 600 V

STMicroelectronics
2,950 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - Surface Mount
STP14NM50N

STP14NM50N

MOSFET N-CH 500V 12A TO220

STMicroelectronics
124 -

RFQ

STP14NM50N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 100µA 27 nC @ 10 V ±25V 816 pF @ 50 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF23N80K5

STF23N80K5

MOSFET N-CH 800V 16A TO220FP

STMicroelectronics
703 -

RFQ

STF23N80K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 280mOhm @ 8A, 10V 5V @ 100µA 33 nC @ 10 V ±30V 1000 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFW40N60M2

STFW40N60M2

MOSFET N-CH 600V 34A ISOWATT

STMicroelectronics
114 -

RFQ

STFW40N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW20N95DK5

STW20N95DK5

MOSFET N-CH 950V 18A TO247

STMicroelectronics
176 -

RFQ

STW20N95DK5

Ficha técnica

Tube MDmesh™ DK5 Active N-Channel MOSFET (Metal Oxide) 950 V 18A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 50.7 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW56N60M2-4

STW56N60M2-4

MOSFET N-CH 600V 52A TO247-4L

STMicroelectronics
555 -

RFQ

STW56N60M2-4

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 55mOhm @ 26A, 10V 4V @ 250µA 91 nC @ 10 V ±25V 3750 pF @ 100 V - 350W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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