Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STW42N60M2-EP

STW42N60M2-EP

MOSFET N-CH 600V 34A TO247

STMicroelectronics
3,140 -

RFQ

STW42N60M2-EP

Ficha técnica

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
STWA75N65DM6

STWA75N65DM6

N-CHANNEL 650 V, 33 MOHM TYP., 7

STMicroelectronics
3,484 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 36mOhm @ 37.5A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5700 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA65N65DM2AG

STWA65N65DM2AG

MOSFET N-CH 650V 60A TO247

STMicroelectronics
3,330 -

RFQ

STWA65N65DM2AG

Ficha técnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 50mOhm @ 30A, 10V 5V @ 250µA 120 nC @ 10 V ±25V 5500 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP12N120K5

STP12N120K5

MOSFET N-CH 1200V 12A TO220

STMicroelectronics
2,721 -

RFQ

STP12N120K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW68N65DM6-4AG

STW68N65DM6-4AG

MOSFET N-CH 650V 72A TO247-4

STMicroelectronics
3,614 -

RFQ

STW68N65DM6-4AG

Ficha técnica

Tube Automotive, AEC-Q101, MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 72A (Tc) - 39mOhm @ 36A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5900 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFW12N120K5

STFW12N120K5

MOSFET N-CH 1200V 12A ISOWATT

STMicroelectronics
2,042 -

RFQ

STFW12N120K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW75N65DM6-4

STW75N65DM6-4

N-CHANNEL 650 V, 33 MOHM TYP., 7

STMicroelectronics
100 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 36mOhm @ 37.5A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5700 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFW69N65M5

STFW69N65M5

MOSFET N-CH 650V 58A ISOWATT

STMicroelectronics
3,724 -

RFQ

STFW69N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 45mOhm @ 29A, 10V 5V @ 250µA 143 nC @ 10 V ±25V 6420 pF @ 100 V - 79W (Tc) 150°C (TJ) Through Hole
SCT1000N170

SCT1000N170

HIP247 IN LINE

STMicroelectronics
3,521 -

RFQ

SCT1000N170

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A (Tc) 20V 1.3Ohm @ 3A, 20V 3.5V @ 1mA 13.3 nC @ 20 V +22V, -10V 133 pF @ 1000 V - 96W (Tc) -55°C ~ 200°C (TJ) Through Hole
SCTH40N120G2V-7

SCTH40N120G2V-7

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics
2,793 -

RFQ

SCTH40N120G2V-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
STW48NM60N

STW48NM60N

MOSFET N-CH 600V 44A TO247

STMicroelectronics
2,446 -

RFQ

STW48NM60N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 44A (Tc) 10V 70mOhm @ 20A, 10V 4V @ 250µA 124 nC @ 10 V ±25V 4285 pF @ 50 V - 330W (Tc) 150°C (TJ) Through Hole
SCTL35N65G2V

SCTL35N65G2V

TRANS SJT N-CH 650V PWRFLAT HV

STMicroelectronics
2,317 -

RFQ

SCTL35N65G2V

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) - 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 417W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD37P3H6AG

STD37P3H6AG

MOSFET P-CH 30V 49A DPAK

STMicroelectronics
3,195 -

RFQ

STD37P3H6AG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ H6 Obsolete P-Channel MOSFET (Metal Oxide) 30 V 49A (Tc) 10V 15mOhm @ 25A, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 1630 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SCTW40N120G2V

SCTW40N120G2V

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics
3,332 -

RFQ

SCTW40N120G2V

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 100mOhm @ 20A, 18V 4.9V @ 1mA 61 nC @ 18 V +22V, -10V 1233 pF @ 800 V - 278W (Tc) -55°C ~ 200°C (TJ) Through Hole
STL23NS3LLH7

STL23NS3LLH7

MOSFET N-CH 30V 92A POWERFLAT

STMicroelectronics
2,524 -

RFQ

STL23NS3LLH7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ H7 Obsolete N-Channel MOSFET (Metal Oxide) 30 V 92A (Tc) 4.5V, 10V 3.7mOhm @ 11.5A, 10V 2.3V @ 1mA 13.7 nC @ 4.5 V ±20V 2100 pF @ 15 V - 2.9W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF12N60M2

STF12N60M2

MOSFET N-CH 600V 9A TO220FP

STMicroelectronics
3,552 -

RFQ

STF12N60M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 450mOhm @ 4.5A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 538 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
STU16N60M2

STU16N60M2

MOSFET N-CH 600V 12A IPAK

STMicroelectronics
2,190 -

RFQ

STU16N60M2

Ficha técnica

Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 700 pF @ 100 V - 110W (Tc) 150°C (TJ) Through Hole
STFU15N80K5

STFU15N80K5

MOSFET N-CH 800V 14A TO220FP

STMicroelectronics
3,207 -

RFQ

STFU15N80K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 375mOhm @ 7A, 10V 5V @ 100µA 32 nC @ 10 V ±30V 1100 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTL90N65G2V

SCTL90N65G2V

SILICON CARBIDE POWER MOSFET 650

STMicroelectronics
2,902 -

RFQ

SCTL90N65G2V

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 24mOhm @ 40A, 18V 5V @ 1mA 157 nC @ 18 V +22V, -10V 3380 pF @ 400 V - 935W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SCTWA60N120G2-4

SCTWA60N120G2-4

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics
2,516 -

RFQ

SCTWA60N120G2-4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 18V 5V @ 1mA 94 nC @ 18 V +22V, -10V 1969 pF @ 800 V - 388W (Tc) -55°C ~ 200°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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