Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STU60N55F3

STU60N55F3

MOSFET N-CH 55V 80A IPAK

STMicroelectronics
3,939 -

RFQ

STU60N55F3

Ficha técnica

Tube STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.5mOhm @ 32A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD1NK80Z-1

STD1NK80Z-1

MOSFET N-CH 800V 1A IPAK

STMicroelectronics
3,528 -

RFQ

STD1NK80Z-1

Ficha técnica

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 16Ohm @ 500mA, 10V 4.5V @ 50µA 7.7 nC @ 10 V ±30V 160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW150NF55

STW150NF55

MOSFET N-CH 55V 120A TO247-3

STMicroelectronics
3,824 -

RFQ

STW150NF55

Ficha técnica

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 6mOhm @ 60A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STI14NM65N

STI14NM65N

MOSFET N-CH 650V 12A I2PAK

STMicroelectronics
2,535 -

RFQ

STI14NM65N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 45 nC @ 10 V ±25V 1300 pF @ 50 V - 125W (Tc) 150°C (TJ) Through Hole
STF25NM60ND

STF25NM60ND

MOSFET N-CH 600V 21A TO220FP

STMicroelectronics
3,202 -

RFQ

STF25NM60ND

Ficha técnica

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 40W (Tc) 150°C (TJ) Through Hole
STD5NK50Z-1

STD5NK50Z-1

MOSFET N-CH 500V 4.4A IPAK

STMicroelectronics
2,405 -

RFQ

STD5NK50Z-1

Ficha técnica

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 535 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI23NM60ND

STI23NM60ND

MOSFET N-CH 600V 19.5A I2PAK

STMicroelectronics
2,420 -

RFQ

STI23NM60ND

Ficha técnica

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 19.5A (Tc) 10V 180mOhm @ 10A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 2050 pF @ 50 V - 150W (Tc) 150°C (TJ) Through Hole
STF14NM65N

STF14NM65N

MOSFET N-CH 650V 12A TO220FP

STMicroelectronics
2,886 -

RFQ

STF14NM65N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 45 nC @ 10 V ±25V 1300 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
STB80NF03L-04-1

STB80NF03L-04-1

MOSFET N-CH 30V 80A I2PAK

STMicroelectronics
3,171 -

RFQ

STB80NF03L-04-1

Ficha técnica

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4mOhm @ 40A, 10V 1V @ 250µA 110 nC @ 4.5 V ±20V 5500 pF @ 25 V - 300W (Tc) -60°C ~ 175°C (TJ) Through Hole
STP7NM80

STP7NM80

MOSFET N-CH 800V 6.5A TO220-3

STMicroelectronics
3,197 -

RFQ

STP7NM80

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 1.05Ohm @ 3.25A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 620 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF24NM65N

STF24NM65N

MOSFET N-CH 650V 19A TO220FP

STMicroelectronics
2,469 -

RFQ

STF24NM65N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 190mOhm @ 9.5A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 2500 pF @ 50 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP270N4F3

STP270N4F3

MOSFET N-CH 40V 120A TO220-3

STMicroelectronics
2,758 -

RFQ

STP270N4F3

Ficha técnica

Tube STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.9mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD150NH02L-1

STD150NH02L-1

MOSFET N-CH 24V 150A IPAK

STMicroelectronics
2,379 -

RFQ

STD150NH02L-1

Ficha técnica

Tube STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 24 V 150A (Tc) 5V, 10V 3.5mOhm @ 75A, 10V 1.8V @ 250µA 93 nC @ 10 V ±20V 4450 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
STI24NM65N

STI24NM65N

MOSFET N-CH 650V 19A I2PAK

STMicroelectronics
3,625 -

RFQ

STI24NM65N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 190mOhm @ 9.5A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 2500 pF @ 50 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW20NM65N

STW20NM65N

MOSFET N-CH 650V 19A TO247-3

STMicroelectronics
2,985 -

RFQ

STW20NM65N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 190mOhm @ 9.5A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 2500 pF @ 50 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD3NM60-1

STD3NM60-1

MOSFET N-CH 600V 3A IPAK

STMicroelectronics
2,051 -

RFQ

STD3NM60-1

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 1.5Ohm @ 1.5A, 10V 5V @ 250µA 14 nC @ 10 V ±30V 324 pF @ 25 V - 42W (Tc) -65°C ~ 150°C (TJ) Through Hole
STU95N2LH5

STU95N2LH5

MOSFET N-CH 25V 80A IPAK

STMicroelectronics
3,298 -

RFQ

STU95N2LH5

Ficha técnica

Tube STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 5V, 10V 4.9mOhm @ 40A, 10V 1V @ 250µA 13.4 nC @ 5 V ±25V 1817 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
STI25NM60ND

STI25NM60ND

MOSFET N-CH 600V 21A I2PAK

STMicroelectronics
2,339 -

RFQ

STI25NM60ND

Ficha técnica

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) Through Hole
STW18NM80

STW18NM80

MOSFET N-CH 800V 17A TO247-3

STMicroelectronics
3,300 -

RFQ

STW18NM80

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 295mOhm @ 8.5A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2070 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
STF45N65M5

STF45N65M5

MOSFET N-CH 650V 35A TO220FP

STMicroelectronics
2,024 -

RFQ

STF45N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 19.5A, 10V 5V @ 250µA 91 nC @ 10 V ±25V 3375 pF @ 100 V - 40W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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