Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7S1R0-40HJ

BUK7S1R0-40HJ

MOSFET N-CH 40V 325A LFPAK88

Nexperia USA Inc.
2,042 -

RFQ

BUK7S1R0-40HJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 325A (Ta) 10V 1mOhm @ 25A, 10V 3.6V @ 1mA 137 nC @ 10 V +20V, -10V 10322 pF @ 25 V - 375W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PSMN013-100PS,127

PSMN013-100PS,127

MOSFET N-CH 100V 68A TO220AB

Nexperia USA Inc.
2,678 -

RFQ

PSMN013-100PS,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 68A (Tc) 10V 13.9mOhm @ 15A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 3195 pF @ 50 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP20NQ20T,127

PHP20NQ20T,127

MOSFET N-CH 200V 20A TO220AB

Nexperia USA Inc.
3,205 -

RFQ

PHP20NQ20T,127

Ficha técnica

Bulk,Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 4V @ 1mA 65 nC @ 10 V ±20V 2470 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK965R8-100E,118

BUK965R8-100E,118

MOSFET N-CH 100V 120A D2PAK

Nexperia USA Inc.
3,053 -

RFQ

BUK965R8-100E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 5V 5.8mOhm @ 25A, 5V 2.1V @ 1mA 133 nC @ 5 V ±10V 17460 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK763R8-80E,118

BUK763R8-80E,118

MOSFET N-CH 80V 120A D2PAK

Nexperia USA Inc.
3,857 -

RFQ

BUK763R8-80E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.8mOhm @ 25A, 10V 4V @ 1mA 169 nC @ 10 V ±20V 12030 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMNR90-30BL,118

PSMNR90-30BL,118

MOSFET N-CH 30V 120A D2PAK

Nexperia USA Inc.
3,767 -

RFQ

PSMNR90-30BL,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1mOhm @ 25A, 10V 2.2V @ 1mA 243 nC @ 10 V ±20V 14850 pF @ 15 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN3R8-100BS,118

PSMN3R8-100BS,118

MOSFET N-CH 100V 120A D2PAK

Nexperia USA Inc.
3,737 -

RFQ

PSMN3R8-100BS,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R7-60BS,118

PSMN1R7-60BS,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.
3,696 -

RFQ

PSMN1R7-60BS,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2mOhm @ 25A, 10V 4V @ 1mA 137 nC @ 10 V ±20V 9997 pF @ 30 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK765R0-100E,118

BUK765R0-100E,118

MOSFET N-CH 100V 120A D2PAK

Nexperia USA Inc.
2,500 -

RFQ

BUK765R0-100E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 180 nC @ 10 V ±20V 11810 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN4R6-60PS,127

PSMN4R6-60PS,127

MOSFET N-CH 60V 100A TO220AB

Nexperia USA Inc.
3,366 -

RFQ

PSMN4R6-60PS,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 70.8 nC @ 10 V ±20V 4426 pF @ 30 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMNR55-40SSHJ

PSMNR55-40SSHJ

PSMNR55-40SSH/SOT1235/LFPAK88

Nexperia USA Inc.
3,951 -

RFQ

PSMNR55-40SSHJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 500A (Ta) 10V 0.55mOhm @ 25A, 10V 3.6V @ 1mA 267 nC @ 10 V ±20V 21162 pF @ 25 V - 375W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PSMN7R0-100PS,127

PSMN7R0-100PS,127

MOSFET N-CH 100V 100A TO220AB

Nexperia USA Inc.
3,334 -

RFQ

PSMN7R0-100PS,127

Ficha técnica

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 12mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) - Through Hole
PSMN004-60B,118

PSMN004-60B,118

MOSFET N-CH 60V 75A D2PAK

Nexperia USA Inc.
2,013 -

RFQ

PSMN004-60B,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.6mOhm @ 25A, 10V 4V @ 1mA 168 nC @ 10 V ±20V 8300 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN4R8-100PSEQ

PSMN4R8-100PSEQ

MOSFET N-CH 100V 120A TO220AB

Nexperia USA Inc.
2,538 -

RFQ

PSMN4R8-100PSEQ

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tj) 10V 5mOhm @ 25A, 10V 4V @ 1mA 278 nC @ 10 V ±20V 14400 pF @ 50 V - 405W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN1R1-30PL,127

PSMN1R1-30PL,127

MOSFET N-CH 30V 120A TO220AB

Nexperia USA Inc.
3,148 -

RFQ

PSMN1R1-30PL,127

Ficha técnica

Bulk,Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.3mOhm @ 25A, 10V 2.2V @ 1mA 243 nC @ 10 V ±20V 14850 pF @ 15 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN1R5-40PS,127

PSMN1R5-40PS,127

MOSFET N-CH 40V 120A TO220AB

Nexperia USA Inc.
2,978 -

RFQ

PSMN1R5-40PS,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 4V @ 1mA 136 nC @ 10 V ±20V 9710 pF @ 20 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
GAN063-650WSAQ

GAN063-650WSAQ

GANFET N-CH 650V 34.5A TO247-3

Nexperia USA Inc.
2,905 -

RFQ

GAN063-650WSAQ

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 34.5A (Ta) 10V 60mOhm @ 25A, 10V 4.5V @ 1mA 15 nC @ 10 V ±20V 1000 pF @ 400 V - 143W (Ta) -55°C ~ 175°C (TJ) Through Hole
GAN041-650WSBQ

GAN041-650WSBQ

GAN041-650WSB/SOT429/TO-247

Nexperia USA Inc.
2,381 -

RFQ

GAN041-650WSBQ

Ficha técnica

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 47.2A 10V 41mOhm @ 32A, 10V 4.5V @ 1mA 22 nC @ 10 V ±20V 1500 pF @ 400 V - 187W -55°C ~ 175°C (TJ) Through Hole
NX138BKR

NX138BKR

MOSFET N-CH 60V 265MA TO236AB

Nexperia USA Inc.
2,741 -

RFQ

NX138BKR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 265mA (Ta) 2.5V, 10V 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.49 nC @ 4.5 V ±20V 20.2 pF @ 30 V - 310mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMZB290UN,315

PMZB290UN,315

MOSFET N-CH 20V 1A DFN1006B-3

Nexperia USA Inc.
3,394 -

RFQ

PMZB290UN,315

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 1559 Record«Prev1... 1415161718192021...78Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario