Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT6017B2LLG

APT6017B2LLG

MOSFET N-CH 600V 35A T-MAX

Microsemi Corporation
2,485 -

RFQ

APT6017B2LLG

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 170mOhm @ 17.5A, 10V 5V @ 2.5mA 100 nC @ 10 V ±30V 4500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60M75JVFR

APT60M75JVFR

MOSFET N-CH 600V 62A ISOTOP

Microsemi Corporation
3,210 -

RFQ

Tube POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) 10V 75mOhm @ 31A, 10V 4V @ 5mA 1050 nC @ 10 V ±30V 19800 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT60M80JVR

APT60M80JVR

MOSFET N-CH 600V 55A ISOTOP

Microsemi Corporation
2,595 -

RFQ

Tube POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V 80mOhm @ 500mA, 10V 4V @ 5mA 870 nC @ 10 V ±30V 14500 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT6M100K

APT6M100K

MOSFET N-CH 1000V 6A TO220

Microsemi Corporation
3,344 -

RFQ

APT6M100K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 2.5Ohm @ 3A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1410 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7F80K

APT7F80K

MOSFET N-CH 800V 7A TO220

Microsemi Corporation
2,936 -

RFQ

APT7F80K

Ficha técnica

Tube POWER MOS 8™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.5Ohm @ 4A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1335 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8024LLLG

APT8024LLLG

MOSFET N-CH 800V 31A TO264

Microsemi Corporation
2,209 -

RFQ

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 31A (Tc) 10V 240mOhm @ 15.5A, 10V 5V @ 2.5mA 160 nC @ 10 V ±30V 4670 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8024LVRG

APT8024LVRG

MOSFET N-CH 800V 33A TO264

Microsemi Corporation
3,752 -

RFQ

Tube POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 240mOhm @ 16.5A, 10V 4V @ 2.5mA 425 nC @ 10 V - 7740 pF @ 25 V - - - Through Hole
APT8M80K

APT8M80K

MOSFET N-CH 800V 8A TO220

Microsemi Corporation
2,134 -

RFQ

APT8M80K

Ficha técnica

Tube POWER MOS 8™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.35Ohm @ 4A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1335 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50N60JCU2

APT50N60JCU2

MOSFET N-CH 600V 52A SOT227

Microsemi Corporation
3,615 -

RFQ

APT50N60JCU2

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 45mOhm @ 22.5A, 10V 3.9V @ 3mA 150 nC @ 10 V ±20V 7200 pF @ 25 V - 290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC60DAM24T1G

APTC60DAM24T1G

MOSFET N-CH 600V 95A SP1

Microsemi Corporation
2,466 -

RFQ

APTC60DAM24T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 95A (Tc) 10V 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300 nC @ 10 V ±20V 14400 pF @ 25 V - 462W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC60DAM35T1G

APTC60DAM35T1G

MOSFET N-CH 600V 72A SP1

Microsemi Corporation
3,486 -

RFQ

APTC60DAM35T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518 nC @ 10 V ±20V 14000 pF @ 25 V - 416W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC60SKM35T1G

APTC60SKM35T1G

MOSFET N-CH 600V 72A SP1

Microsemi Corporation
2,032 -

RFQ

APTC60SKM35T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518 nC @ 10 V ±20V 14000 pF @ 25 V - 416W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC80DA15T1G

APTC80DA15T1G

MOSFET N-CH 800V 28A SP1

Microsemi Corporation
3,702 -

RFQ

APTC80DA15T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 28A (Tc) 10V 150mOhm @ 14A, 10V 3.9V @ 2mA 180 nC @ 10 V ±30V 4507 pF @ 25 V - 277W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC80SK15T1G

APTC80SK15T1G

MOSFET N-CH 800V 28A SP1

Microsemi Corporation
2,416 -

RFQ

APTC80SK15T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 28A (Tc) 10V 150mOhm @ 14A, 10V 3.9V @ 2mA 180 nC @ 10 V ±30V 4507 pF @ 25 V - 277W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100DA18T1G

APTM100DA18T1G

MOSFET N-CH 1000V 40A SP1

Microsemi Corporation
2,972 -

RFQ

APTM100DA18T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 40A (Tc) 10V 216mOhm @ 33A, 10V 5V @ 2.5mA 570 nC @ 10 V ±30V 14800 pF @ 25 V - 657W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100DA33T1G

APTM100DA33T1G

MOSFET N-CH 1000V 23A SP1

Microsemi Corporation
3,612 -

RFQ

APTM100DA33T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 390W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100DA40T1G

APTM100DA40T1G

MOSFET N-CH 1000V 20A SP1

Microsemi Corporation
3,146 -

RFQ

APTM100DA40T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 480mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 6800 pF @ 25 V - 357W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100SK18TG

APTM100SK18TG

MOSFET N-CH 1000V 43A SP4

Microsemi Corporation
2,894 -

RFQ

APTM100SK18TG

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 43A (Tc) 10V 210mOhm @ 21.5A, 10V 5V @ 5mA 372 nC @ 10 V ±30V 10400 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100SK40T1G

APTM100SK40T1G

MOSFET N-CH 1000V 20A SP1

Microsemi Corporation
3,032 -

RFQ

APTM100SK40T1G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 480mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 6800 pF @ 25 V - 357W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100SKM90G

APTM100SKM90G

MOSFET N-CH 1000V 78A SP6

Microsemi Corporation
2,476 -

RFQ

APTM100SKM90G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 78A (Tc) 10V 105mOhm @ 39A, 10V 5V @ 10mA 744 nC @ 10 V ±30V 20700 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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