Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT5025BN

APT5025BN

MOSFET N-CH 500V 23A TO247AD

Microsemi Corporation
3,810 -

RFQ

APT5025BN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 250mOhm @ 11.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6030BN

APT6030BN

MOSFET N-CH 600V 23A TO247AD

Microsemi Corporation
3,917 -

RFQ

APT6030BN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 300mOhm @ 11.5A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6040BN

APT6040BN

MOSFET N-CH 600V 18A TO247AD

Microsemi Corporation
2,153 -

RFQ

APT6040BN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 9A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6040BNG

APT6040BNG

MOSFET N-CH 600V 18A TO247AD

Microsemi Corporation
3,017 -

RFQ

APT6040BNG

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 9A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8018JN

APT8018JN

MOSFET N-CH 800V 40A ISOTOP

Microsemi Corporation
2,625 -

RFQ

APT8018JN

Ficha técnica

Tray POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 40A (Tc) 10V 180mOhm @ 20A, 10V 4V @ 5mA 700 nC @ 10 V ±30V 14000 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8075BN

APT8075BN

MOSFET N-CH 800V 13A TO247AD

Microsemi Corporation
2,076 -

RFQ

APT8075BN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 750mOhm @ 6.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT58MJ50J

APT58MJ50J

MOSFET N-CH 500V 58A ISOTOP

Microsemi Corporation
2,502 -

RFQ

APT58MJ50J

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10M07JVR

APT10M07JVR

MOSFET N-CH 100V 225A ISOTOP

Microsemi Corporation
2,283 -

RFQ

APT10M07JVR

Ficha técnica

Bulk POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 225A (Tc) 10V - 4V @ 5mA 1050 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10M11JVR

APT10M11JVR

MOSFET N-CH 100V 144A ISOTOP

Microsemi Corporation
3,907 -

RFQ

APT10M11JVR

Ficha técnica

Bulk POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 144A (Tc) 10V - 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT4012BVR

APT4012BVR

MOSFET N-CH 400V 37A TO247AD

Microsemi Corporation
2,689 -

RFQ

APT4012BVR

Ficha técnica

Bulk POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 37A (Tc) 10V 120mOhm @ 18.5A, 10V 4V @ 1mA 290 nC @ 10 V ±30V 5400 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT4012BVRG

APT4012BVRG

MOSFET N-CH 400V 37A TO247AD

Microsemi Corporation
3,725 -

RFQ

APT4012BVRG

Ficha técnica

Bulk POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 37A (Tc) 10V 120mOhm @ 18.5A, 10V 4V @ 1mA 290 nC @ 10 V ±30V 5400 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12080JVR

APT12080JVR

MOSFET N-CH 1200V 15A ISOTOP

Microsemi Corporation
2,555 -

RFQ

APT12080JVR

Ficha técnica

Bulk POWER MOS V® Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 10V 800mOhm @ 7.5A, 10V 4V @ 2.5mA 485 nC @ 10 V ±30V 7800 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5014B2VRG

APT5014B2VRG

MOSFET N-CH 500V T-MAX

Microsemi Corporation
2,577 -

RFQ

Tube - Obsolete - - - 47A (Tc) - - - - - - - - - -
APT4016BVRG

APT4016BVRG

MOSFET N-CH 400V TO-247

Microsemi Corporation
2,664 -

RFQ

Tube - Obsolete - - - 27A (Tc) - - - - - - - - - -
MSC090SMA120B

MSC090SMA120B

MOSFET N-CH 1200V TO247

Microsemi Corporation
3,782 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
MSC140SMA120S

MSC140SMA120S

MOSFET N-CH 1200V D3PAK

Microsemi Corporation
3,573 -

RFQ

Tube * Obsolete - - - - - - - - - - - - - -
MSC750SMA120B

MSC750SMA120B

MOSFET N-CH 1200V TO247

Microsemi Corporation
2,520 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
APT130SM70B

APT130SM70B

SICFET N-CH 700V 110A TO247-3

Microsemi Corporation
3,880 -

RFQ

APT130SM70B

Ficha técnica

Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 110A (Tc) 20V 45mOhm @ 60A, 20V 2.4V @ 1mA 220 nC @ 20 V +25V, -10V 3950 pF @ 700 V - 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT130SM70J

APT130SM70J

SICFET N-CH 700V 78A SOT227

Microsemi Corporation
3,842 -

RFQ

APT130SM70J

Ficha técnica

Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 78A (Tc) 20V 45mOhm @ 60A, 20V 2.4V @ 1mA 270 nC @ 20 V +25V, -10V 3950 pF @ 700 V - 273W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
APT130SM70S

APT130SM70S

MOSFET N-CH 700V D3PAK

Microsemi Corporation
3,569 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
Total 337 Record«Prev1... 121314151617Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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