Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMP32D4S-13

DMP32D4S-13

MOSFET P-CH 30V 300MA SOT23

Diodes Incorporated
2,419 -

RFQ

DMP32D4S-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 300mA (Ta) 4.5V, 10V 2.4Ohm @ 300mA, 10V 2.4V @ 250µA 0.6 nC @ 4.5 V ±20V 51.16 pF @ 15 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138TA

BSS138TA

MOSFET N-CH 50V 200MA SOT23-3

Diodes Incorporated
2,359 -

RFQ

BSS138TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2305U-7

DMP2305U-7

MOSFET P-CH 20V 4.2A SOT23-3

Diodes Incorporated
3,258 -

RFQ

DMP2305U-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 60mOhm @ 4.2A, 4.5V 900mV @ 250µA 7.6 nC @ 4.5 V ±8V 727 pF @ 20 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SK3018-TP

2SK3018-TP

MOSFET N-CH 30V 100MA SOT323

Micro Commercial Co
3,214 -

RFQ

2SK3018-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V 8Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13 pF @ 5 V - 200mW (Ta) -55°C ~ 150°C Surface Mount
DMN3067LW-13

DMN3067LW-13

MOSFET N-CH 30V 2.6A SOT-323

Diodes Incorporated
2,295 -

RFQ

DMN3067LW-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 2.5V, 4.5V 67mOhm @ 2.5A, 4.5V 1.5V @ 250µA 4.6 nC @ 4.5 V ±12V 447 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSN20Q-7

BSN20Q-7

MOSFET N-CH 50V 500MA SOT23

Diodes Incorporated
3,832 -

RFQ

BSN20Q-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 50 V 500mA (Ta) 4.5V, 10V 1.8Ohm @ 220mA, 10V 1.5V @ 250µA 0.8 nC @ 10 V ±20V 40 pF @ 10 V - 600mW (Ta), 920mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
NXV55UNR

NXV55UNR

NXV55UN/SOT23/TO-236AB

Nexperia USA Inc.
2,277 -

RFQ

NXV55UNR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.5V, 4.5V 66mOhm @ 1.9A, 4.5V 900mV @ 250µA 8.7 nC @ 4.5 V ±8V 352 pF @ 15 V - 340mW (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMN10H700S-7

DMN10H700S-7

MOSFET N-CH 100V 700MA SOT23

Diodes Incorporated
3,889 -

RFQ

DMN10H700S-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 6V, 10V 700mOhm @ 1.5A, 10V 4V @ 250µA 4.6 nC @ 10 V ±20V 235 pF @ 50 V - 400mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMV90ENER

PMV90ENER

MOSFET N-CHANNEL 30V 3A TO236AB

Nexperia USA Inc.
2,615 -

RFQ

PMV90ENER

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4.5V, 10V 72mOhm @ 3A, 10V 2.5V @ 250µA 5.5 nC @ 10 V ±20V 160 pF @ 15 V - 460mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002W

2N7002W

MOSFET N-CH 60V 115MA SC70

onsemi
2,809 -

RFQ

2N7002W

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMZB150UNEYL

PMZB150UNEYL

MOSFET N-CH 20V 1.5A DFN1006B-3

Nexperia USA Inc.
2,517 -

RFQ

PMZB150UNEYL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 1.5V, 4.5V 200mOhm @ 1.5A, 4.5V 950mV @ 250µA 1.6 nC @ 4.5 V ±8V 93 pF @ 10 V - 350mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3K324R,LF

SSM3K324R,LF

MOSFET N-CH 30V 4A SOT-23F

Toshiba Semiconductor and Storage
3,406 -

RFQ

SSM3K324R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 4.5V 55mOhm @ 4A, 4.5V - - ±12V 190 pF @ 30 V - 1W (Ta) 150°C (TJ) Surface Mount
SI1062X-T1-GE3

SI1062X-T1-GE3

MOSFET N-CH 20V SC89-3

Vishay Siliconix
3,187 -

RFQ

SI1062X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 530mA (Ta) 1.5V, 4.5V 420mOhm @ 500mA, 4.5V 1V @ 250µA 2.7 nC @ 8 V ±8V 43 pF @ 10 V - 220mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQU3N40TU

FQU3N40TU

MOSFET N-CH 400V 2A IPAK

onsemi
3,449 -

RFQ

FQU3N40TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP11P06

FQP11P06

MOSFET P-CH 60V 11.4A TO220-3

onsemi
2,439 -

RFQ

FQP11P06

Ficha técnica

Bulk,Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD4P25TM

FQD4P25TM

MOSFET P-CH 250V 3.1A DPAK

onsemi
3,847 -

RFQ

FQD4P25TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 3.1A (Tc) 10V 2.1Ohm @ 1.55A, 10V 5V @ 250µA 14 nC @ 10 V ±30V 420 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP5P10

FQP5P10

MOSFET P-CH 100V 4.5A TO220-3

onsemi
3,918 -

RFQ

FQP5P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 1.05Ohm @ 2.25A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP4P25

FQP4P25

MOSFET P-CH 250V 4A TO220-3

onsemi
2,048 -

RFQ

FQP4P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4A (Tc) 10V 2.1Ohm @ 2A, 10V 5V @ 250µA 14 nC @ 10 V ±30V 420 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP3N40

FQP3N40

MOSFET N-CH 400V 2.5A TO220-3

onsemi
2,485 -

RFQ

FQP3N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP9N15

FQP9N15

MOSFET N-CH 150V 9A TO220-3

onsemi
2,283 -

RFQ

FQP9N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 13 nC @ 10 V ±25V 410 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Record«Prev1... 343344345346347348349350...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario