Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G2R50MT33K

G2R50MT33K

3300V 50M TO-247-4 SIC MOSFET

GeneSiC Semiconductor
3,394 -

RFQ

G2R50MT33K

Ficha técnica

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 3300 V 63A (Tc) 20V 50mOhm @ 40A, 20V 3.5V @ 10mA (Typ) 340 nC @ 20 V +25V, -10V 7301 pF @ 1000 V Standard 536W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCT3120ALHRC11

SCT3120ALHRC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor
3,313 -

RFQ

SCT3120ALHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Not For New Designs N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 18V 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 103W 175°C (TJ) Through Hole
IXFH80N65X2

IXFH80N65X2

MOSFET N-CH 650V 80A TO247

IXYS
2,384 -

RFQ

IXFH80N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 5.5V @ 4mA 143 nC @ 10 V ±30V 8245 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N20T

IXFK170N20T

MOSFET N-CH 200V 170A TO264AA

IXYS
3,981 -

RFQ

IXFK170N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 11mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 19600 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N7002BKVL

2N7002BKVL

MOSFET N-CH 60V 350MA TO236AB

Nexperia USA Inc.
2,754 -

RFQ

2N7002BKVL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
IPP60R040C7XKSA1

IPP60R040C7XKSA1

MOSFET N-CH 600V 50A TO220-3

Infineon Technologies
3,827 -

RFQ

IPP60R040C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSM3K7002KFU,LF

SSM3K7002KFU,LF

MOSFET N-CH 60V 400MA USM

Toshiba Semiconductor and Storage
2,870 -

RFQ

SSM3K7002KFU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
2N7002NXAKR

2N7002NXAKR

MOSFET N-CH 60V 190MA TO236AB

Nexperia USA Inc.
2,871 -

RFQ

2N7002NXAKR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 190mA (Ta), 300mA (Tc) 5V, 10V 4.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.43 nC @ 4.5 V ±20V 20 pF @ 10 V - 265mW (Ta), 1.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3K35AMFV,L3F

SSM3K35AMFV,L3F

MOSFET N-CH 20V 250MA VESM

Toshiba Semiconductor and Storage
3,745 -

RFQ

SSM3K35AMFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34 nC @ 4.5 V ±10V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
NX138AKR

NX138AKR

MOSFET N-CH 60V 190MA TO236AB

Nexperia USA Inc.
2,111 -

RFQ

NX138AKR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 190mA (Ta) 2.5V, 10V 4.5Ohm @ 190mA, 10V 1.5V @ 250µA 1.4 nC @ 10 V ±20V 20 pF @ 30 V - 325mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002NXBKR

2N7002NXBKR

MOSFET N-CH 60V 270MA TO236AB

Nexperia USA Inc.
3,321 -

RFQ

2N7002NXBKR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta), 330mA (Tc) 5V, 10V 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1 nC @ 10 V ±20V 23.6 pF @ 10 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3K44MFV,L3F

SSM3K44MFV,L3F

MOSFET N-CH 30V 100MA VESM

Toshiba Semiconductor and Storage
2,270 -

RFQ

SSM3K44MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 8.5 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
NX6008NBKR

NX6008NBKR

NX6008NBK/SOT23/TO-236AB

Nexperia USA Inc.
3,388 -

RFQ

NX6008NBKR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta) 1.5V, 4.5V 2.8Ohm @ 300mA, 4.5V 900mV @ 250µA 0.7 nC @ 4.5 V ±8V 27 pF @ 30 V - 270mW (Ta), 1.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002WT1G

2N7002WT1G

MOSFET N-CH 60V 310MA SC70-3

onsemi
2,131 -

RFQ

2N7002WT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Ta) 4.5V, 10V 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.7 nC @ 4.5 V ±20V 24.5 pF @ 20 V - 280mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
SPW55N80C3FKSA1

SPW55N80C3FKSA1

MOSFET N-CH 800V 54.9A TO247-3

Infineon Technologies
2,489 -

RFQ

SPW55N80C3FKSA1

Ficha técnica

Tube CoolMOS™ C3 Active N-Channel MOSFET (Metal Oxide) 800 V 54.9A (Tc) 10V 85mOhm @ 32.6A, 10V 3.9V @ 3.3mA 288 nC @ 10 V ±20V 7520 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NX6008NBKWX

NX6008NBKWX

NX6008NBKW/SOT323/SC-70

Nexperia USA Inc.
2,053 -

RFQ

NX6008NBKWX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 1.5V, 4.5V 2.8Ohm @ 300mA, 4.5V 900mV @ 250µA 0.7 nC @ 4.5 V ±8V 27 pF @ 30 V - 270mW (Ta), 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS123_R1_00001

BSS123_R1_00001

SOT-23, MOSFET

Panjit International Inc.
38,620 -

RFQ

BSS123_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2.5V @ 250µA 1.8 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002KT1G

2N7002KT1G

MOSFET N-CH 60V 320MA SOT23-3

onsemi
23,217 -

RFQ

2N7002KT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 320mA (Ta) 4.5V, 10V 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.7 nC @ 4.5 V ±20V 24.5 pF @ 20 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002KT7G

2N7002KT7G

MOSFET N-CH 60V 380MA SOT23-3

onsemi
2,797 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 380mA (Ta) 4.5V, 10V 1.6Ohm @ 500mA, 10V 2.3V @ 250µA 0.7 nC @ 4.5 V ±20V 45 pF @ 20 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN65D8LQ-7

DMN65D8LQ-7

MOSFET N-CH 60V 310MA SOT23

Diodes Incorporated
3,825 -

RFQ

DMN65D8LQ-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Ta) 5V, 10V 3Ohm @ 115mA, 10V 2V @ 250µA 0.87 nC @ 10 V ±20V 22 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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