Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPBE65R050CFD7AATMA1

IPBE65R050CFD7AATMA1

MOSFET N-CH 650V 45A TO263-7

Infineon Technologies
3,815 -

RFQ

IPBE65R050CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
G3R75MT12D

G3R75MT12D

SIC MOSFET N-CH 41A TO247-3

GeneSiC Semiconductor
2,658 -

RFQ

G3R75MT12D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 207W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF200P222

IRF200P222

MOSFET N-CH 200V 182A TO247AC

Infineon Technologies
3,844 -

RFQ

IRF200P222

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 182A (Tc) 10V 6.6mOhm @ 82A, 10V 4V @ 270µA 203 nC @ 10 V ±20V 9820 pF @ 50 V - 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA86N20X4

IXTA86N20X4

MOSFET 200V 86A N-CH ULTRA TO263

IXYS
3,245 -

RFQ

IXTA86N20X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 13mOhm @ 43A, 10V 4.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB57N65M5

STB57N65M5

MOSFET N-CH 650V 42A D2PAK

STMicroelectronics
2,693 -

RFQ

STB57N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Surface Mount
IPW65R080CFDFKSA1

IPW65R080CFDFKSA1

MOSFET N-CH 700V 43.3A TO247-3

Infineon Technologies
3,729 -

RFQ

IPW65R080CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.76mA 170 nC @ 10 V ±20V 5030 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUG90090E-GE3

SUG90090E-GE3

MOSFET N-CH 200V 100A TO247AC

Vishay Siliconix
100 -

RFQ

SUG90090E-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 7.5V, 10V 9.5mOhm @ 20A, 10V 4V @ 250µA 129 nC @ 10 V ±20V 5220 pF @ 100 V - 395W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH023N65S3-F155

FCH023N65S3-F155

MOSFET N-CH 650V 75A TO247

onsemi
2,569 -

RFQ

FCH023N65S3-F155

Ficha técnica

Bulk,Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 23mOhm @ 37.5A, 10V 4.5V @ 7.5mA 222 nC @ 10 V ±30V 7160 pF @ 400 V Super Junction 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH20P50P

IXTH20P50P

MOSFET P-CH 500V 20A TO247

IXYS
3,655 -

RFQ

IXTH20P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 450mOhm @ 10A, 10V 4V @ 250µA 103 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3SC065030B7S

UF3SC065030B7S

650V/30MOHM, SIC, STACKED FAST C

UnitedSiC
2,569 -

RFQ

UF3SC065030B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 62A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 214W (Tc) 175°C (TJ) Surface Mount
IXTH240N15X4

IXTH240N15X4

MOSFET N-CH 150V 240A TO247

IXYS
3,881 -

RFQ

IXTH240N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 4.4mOhm @ 120A, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 8900 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065040K4S

UF3C065040K4S

MOSFET N-CH 650V 54A TO247-4

UnitedSiC
2,650 -

RFQ

UF3C065040K4S

Ficha técnica

Tube - Active N-Channel - 650 V 54A (Tc) 12V 52mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1

MOSFET N-CH 650V 43.3A TO247-3

Infineon Technologies
3,697 -

RFQ

IPW65R080CFDAFKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.76mA 161 nC @ 10 V ±20V 4440 pF @ 100 V - 391W (Tc) -40°C ~ 150°C (TJ) Through Hole
NTBG040N120SC1

NTBG040N120SC1

SICFET N-CH 1200V 60A D2PAK-7

onsemi
116 -

RFQ

NTBG040N120SC1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1789 pF @ 800 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH320N10T2

IXFH320N10T2

MOSFET N-CH 100V 320A TO247AD

IXYS
980 -

RFQ

IXFH320N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R028G7XTMA1

IPT60R028G7XTMA1

MOSFET N-CH 600V 75A 8HSOF

Infineon Technologies
2,842 -

RFQ

IPT60R028G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 28mOhm @ 28.8A, 10V 4V @ 1.44mA 123 nC @ 10 V ±20V 4820 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT3160KLHRC11

SCT3160KLHRC11

SICFET N-CH 1200V 17A TO247N

Rohm Semiconductor
3,119 -

RFQ

SCT3160KLHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 103W 175°C (TJ) Through Hole
2N6661

2N6661

MOSFET N-CH 90V 350MA TO39

Microchip Technology
3,069 -

RFQ

2N6661

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 90 V 350mA (Tj) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 24 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R045C7XKSA1

IPP65R045C7XKSA1

MOSFET N-CH 650V 46A TO220-3

Infineon Technologies
3,988 -

RFQ

IPP65R045C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZ60R040C7XKSA1

IPZ60R040C7XKSA1

MOSFET N-CH 600V 50A TO247-4

Infineon Technologies
3,504 -

RFQ

IPZ60R040C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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