Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3302S

IRL3302S

MOSFET N-CH 20V 39A D2PAK

Infineon Technologies
3,595 -

RFQ

IRL3302S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3502

IRL3502

MOSFET N-CH 20V 110A TO220AB

Infineon Technologies
3,747 -

RFQ

IRL3502

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3705NS

IRL3705NS

MOSFET N-CH 55V 89A D2PAK

Infineon Technologies
3,952 -

RFQ

IRL3705NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3705NSTRL

IRL3705NSTRL

MOSFET N-CH 55V 89A D2PAK

Infineon Technologies
2,519 -

RFQ

IRL3705NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3803STRL

IRL3803STRL

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
2,739 -

RFQ

IRL3803STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520NS

IRL520NS

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,138 -

RFQ

IRL520NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520NSTRL

IRL520NSTRL

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,471 -

RFQ

IRL520NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NL

IRL530NL

MOSFET N-CH 100V 17A TO262

Infineon Technologies
3,941 -

RFQ

IRL530NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL530NSTRL

IRL530NSTRL

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,294 -

RFQ

IRL530NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NSTRR

IRL530NSTRR

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
3,646 -

RFQ

IRL530NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530STRR

IRL530STRR

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix
3,348 -

RFQ

IRL530STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540S

IRL540S

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
3,804 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL620

IRL620

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
2,974 -

RFQ

IRL620

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 5V 800mOhm @ 3.1A, 5V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL620S

IRL620S

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
3,460 -

RFQ

IRL620S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 10V 800mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL630

IRL630

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix
2,378 -

RFQ

IRL630

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL630S

IRL630S

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
3,510 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL630STRL

IRL630STRL

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,414 -

RFQ

IRL630STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL640

IRL640

MOSFET N-CH 200V 17A TO220AB

Vishay Siliconix
3,541 -

RFQ

IRL640

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL640S

IRL640S

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
2,464 -

RFQ

IRL640S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLI520G

IRLI520G

MOSFET N-CH 100V 7.2A TO220-3

Vishay Siliconix
3,696 -

RFQ

IRLI520G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 4V, 5V 270mOhm @ 4.3A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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