Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UMW 30N03A

UMW 30N03A

TO-252 MOSFETS ROHS

UTD Semiconductor
2,040 -

RFQ

UMW 30N03A

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1963 pF @ 15 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFZ44NS

AUIRFZ44NS

AUIRFZ44 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,878 -

RFQ

AUIRFZ44NS

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) - 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0703LSATMA1

BSC0703LSATMA1

MOSFET N-CH 60V 15A/64A TDSON

Infineon Technologies
3,269 -

RFQ

BSC0703LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 64A (Tc) 4.5V, 10V 6.5mOhm @ 32A, 10V 2.3V @ 20µA 13 nC @ 4.5 V ±20V 1800 pF @ 30 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR8403TRL

AUIRFR8403TRL

MOSFET N-CH 40V 100A DPAK

International Rectifier
2,712 -

RFQ

AUIRFR8403TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R660CFDATMA1

IPB65R660CFDATMA1

MOSFET N-CH 650V 6A D2PAK

Infineon Technologies
2,084 -

RFQ

IPB65R660CFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF18N50T-G

FDPF18N50T-G

N-CHANNEL UNIFETTM MOSFET 500V

onsemi
3,752 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tj) 10V 265mOhm @ 9A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 1330 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ)
FDMC3020DC

FDMC3020DC

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,627 -

RFQ

FDMC3020DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 40A (Tc) 4.5V, 10V 6.25mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI040P04PT-AQ

DI040P04PT-AQ

MOSFET, -40V, -40A, P, 22.7W

Diotec Semiconductor
3,876 -

RFQ

DI040P04PT-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G65P06F

G65P06F

P-CH, -60V, 65A, RD(MAX)<18M@-10

Goford Semiconductor
2,282 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 6477 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
DI110N04PQ

DI110N04PQ

MOSFET, 40V, 110A, 42W

Diotec Semiconductor
3,498 -

RFQ

DI110N04PQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2980 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G65P06T

G65P06T

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Goford Semiconductor
3,630 -

RFQ

G65P06T

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 5814 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
G110N06T

G110N06T

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Goford Semiconductor
100 -

RFQ

G110N06T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 5538 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76439S3ST

HUF76439S3ST

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,864 -

RFQ

HUF76439S3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DI110N04PQ-AQ

DI110N04PQ-AQ

MOSFET, 40V, 110A, 42W

Diotec Semiconductor
2,827 -

RFQ

DI110N04PQ-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2980 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF260N60E

FCPF260N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,541 -

RFQ

FCPF260N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 260mOhm @ 7.5A, 10V 3.5V @ 250µA 62 nC @ 10 V ±20V 2500 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK6C2R1-55C,118

BUK6C2R1-55C,118

NEXPERIA BUK6C2R1-55C - 228A, 55

NXP Semiconductors
2,225 -

RFQ

BUK6C2R1-55C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 228A (Tc) 10V 2.3mOhm @ 90A, 10V 2.8V @ 1mA 253 nC @ 10 V ±16V 16000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DI080N03PQ

DI080N03PQ

MOSFET, 30V, 80A, 78W

Diotec Semiconductor
3,502 -

RFQ

DI080N03PQ

Ficha técnica

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2.3V @ 250µA 21 nC @ 4.5 V ±20V 7460 pF @ 30 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH4210DTRPBF

IRFH4210DTRPBF

MOSFET N-CH 25V 44A PQFN

Infineon Technologies
2,239 -

RFQ

IRFH4210DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 25 V 44A (Ta) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.1V @ 100µA 77 nC @ 10 V ±20V 4812 pF @ 13 V - 3.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP60R280C6XKSA1

IPP60R280C6XKSA1

IPP60R280 - 600V COOLMOS N-CHANN

Infineon Technologies
2,836 -

RFQ

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9606-75B,118

BUK9606-75B,118

NEXPERIA BUK9606-75B - 75A, 75V

Nexperia USA Inc.
3,672 -

RFQ

BUK9606-75B,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 5V, 10V 5.5mOhm @ 25A, 10V 2V @ 1mA 95 nC @ 5 V ±15V 11693 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ)
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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