Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA15N50L2

IXTA15N50L2

MOSFET N-CH 500V 15A TO263

IXYS
2,138 -

RFQ

IXTA15N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1201R4BLLG

APT1201R4BLLG

MOSFET N-CH 1200V 9A TO247

Microchip Technology
2,882 -

RFQ

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) 10V 1.4Ohm @ 4.5A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M45SVFRG

APT20M45SVFRG

MOSFET N-CH 200V 56A D3PAK

Microchip Technology
3,996 -

RFQ

APT20M45SVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) - 45mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V - 4860 pF @ 25 V - - - Surface Mount
APT6029BFLLG

APT6029BFLLG

MOSFET N-CH 600V 21A TO247

Microchip Technology
3,336 -

RFQ

APT6029BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 290mOhm @ 10.5A, 10V 5V @ 1mA 65 nC @ 10 V - 2615 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5015BVFRG

APT5015BVFRG

MOSFET N-CH 500V 32A TO247

Microchip Technology
2,689 -

RFQ

APT5015BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - Through Hole
STWA70N60DM6

STWA70N60DM6

MOSFET N-CH 600V 62A TO247

STMicroelectronics
3,173 -

RFQ

STWA70N60DM6

Ficha técnica

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) - - - - - - - - - Through Hole
IXTQ30N50L2

IXTQ30N50L2

MOSFET N-CH 500V 30A TO3P

IXYS
3,439 -

RFQ

IXTQ30N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 4.5V @ 250µA 240 nC @ 10 V ±20V 8100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5017SVRG

APT5017SVRG

MOSFET N-CH 500V 30A D3PAK

Microchip Technology
3,128 -

RFQ

APT5017SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) - 170mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - Surface Mount
NDCTR50120A

NDCTR50120A

MOSFET N-CH 1200V 50A SMD

onsemi
3,323 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IXFK120N25P

IXFK120N25P

MOSFET N-CH 250V 120A TO264AA

IXYS
3,231 -

RFQ

IXFK120N25P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 4mA 185 nC @ 10 V ±20V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT34F60S/TR

APT34F60S/TR

MOSFET N-CH 600V 36A D3PAK

Microchip Technology
2,185 -

RFQ

APT34F60S/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT15N100Q3-TRL

IXFT15N100Q3-TRL

MOSFET N-CH 1000V 15A TO268

IXYS
3,234 -

RFQ

Tape & Reel (TR) HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 1.05Ohm @ 7.5A, 10V 6.5V @ 4mA 64 nC @ 10 V ±30V 3250 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT8065BVFRG

APT8065BVFRG

MOSFET N-CH 800V 13A TO247

Microchip Technology
3,614 -

RFQ

APT8065BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) - 650mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3700 pF @ 25 V - - - Through Hole
NDCTR20120A

NDCTR20120A

MOSFET N-CH 1200V 20A SMD

onsemi
2,369 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
G1006LE

G1006LE

N100V,RD(MAX)<150M@10V,RD(MAX)<1

Goford Semiconductor
1,788 -

RFQ

G1006LE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 4.5V, 10V 150mOhm @ 3A, 10V 2.2V @ 250µA 18.2 nC @ 10 V ±20V 622 pF @ 50 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8780

FDD8780

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
1,003,805 -

RFQ

FDD8780

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1440 pF @ 13 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7675-55A,118

BUK7675-55A,118

NEXPERIA BUK7675-55A - POWER FIE

NXP Semiconductors
75,900 -

RFQ

BUK7675-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA - ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ632-TD-E

2SJ632-TD-E

2SJ632 - P-CHANNEL SILICON MOSFE

onsemi
12,073 -

RFQ

2SJ632-TD-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1

MOSFET N-CH 55V 540MA SOT23-3

Infineon Technologies
2,533 -

RFQ

BSS670S2LH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 540mA (Ta) 4.5V, 10V 650mOhm @ 270mA, 10V 2V @ 2.7µA 2.26 nC @ 10 V ±20V 75 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
03N06L

03N06L

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Goford Semiconductor
1,600 -

RFQ

03N06L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A - 100mOhm @ 2A, 10V 1.2V @ 250µA 14.6 nC @ 30 V ±20V 510 pF @ 30 V - 1.7W -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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