Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMPB23XNE,115

PMPB23XNE,115

MOSFET N-CH 20V 7A DFN2020MD-6

NXP USA Inc.
366,798 -

RFQ

PMPB23XNE,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 1.8V, 4.5V 22mOhm @ 7A, 4.5V 900mV @ 250µA 17 nC @ 4.5 V ±12V 1136 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTNS41S006PZTCG

NTNS41S006PZTCG

NTNS41S006PZ - MOSFET 3-SON

onsemi
280,000 -

RFQ

NTNS41S006PZTCG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
5HP01C-TB-E

5HP01C-TB-E

5HP01 - 50V, 70MA, P-CHANNEL MOS

onsemi
273,000 -

RFQ

5HP01C-TB-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTNS3C68NZT5G

NTNS3C68NZT5G

SINGLE N-CHANNEL SMALL SIGNAL MO

onsemi
269,117 -

RFQ

NTNS3C68NZT5G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTNS41006PZTCG

NTNS41006PZTCG

NTNS41006 - SINGLE P?CHANNEL SMA

onsemi
264,000 -

RFQ

NTNS41006PZTCG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMN28UNEX

PMN28UNEX

PMN28UNE - 20 V, N-CHANNEL TRENC

Nexperia USA Inc.
35,468 -

RFQ

PMN28UNEX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 32mOhm @ 5.5A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 490 pF @ 10 V - 570mW (Ta), 6.25W (Tc) 150°C (TJ) Surface Mount
G30N03D3

G30N03D3

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor
5,000 -

RFQ

G30N03D3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 30A - 7mOhm @ 20A, 10V 2.5V @ 250µA 13 nC @ 10 V ±20V 825 pF @ 15 V - 24W -55°C ~ 150°C (TJ) Surface Mount
SI2301S-2.3A

SI2301S-2.3A

MOSFET SOT-23 P Channel 20V

MDD
534,000 -

RFQ

SI2301S-2.3A

Ficha técnica

Tape & Reel (TR) SOT-23 Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 3.3V, 4.5V 90mOhm @ 3A, 4.5V 1V @ 250µA 6.6 nC @ 10 V ±10V 330 pF @ 10 V - 225mW (Ta) -55°C ~ 150°C Surface Mount
2N7002A

2N7002A

MOSFET, SOT-23, 60V, 0.28A, N, 0

Diotec Semiconductor
2,965 -

RFQ

2N7002A

Ficha técnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 25 V - 350mW (Ta) 150°C (TJ) Surface Mount
2N7002W

2N7002W

MOSFET, SOT-323, 60V, 0.115A, N

Diotec Semiconductor
2,260 -

RFQ

2N7002W

Ficha técnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 13.5Ohm @ 500mA, 10V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) 150°C (TJ)
TK31E60W,S1VX

TK31E60W,S1VX

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage
2,221 -

RFQ

TK31E60W,S1VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
MMFTP84

MMFTP84

MOSFET, SOT-23, 60V, 0.130A, P

Diotec Semiconductor
2,714 -

RFQ

MMFTP84

Ficha técnica

Strip - Active P-Channel MOSFET (Metal Oxide) 60 V 130mA (Ta) 10V 10Ohm @ 130mA, 10V 2V @ 1mA - ±20V 45 pF @ 25 V - 250mW (Ta) 150°C (TJ)
TK31A60W,S4VX

TK31A60W,S4VX

MOSFET N-CH 600V 30.8A TO220SIS

Toshiba Semiconductor and Storage
3,074 -

RFQ

TK31A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 45W (Tc) 150°C (TJ) Through Hole
G20N03K

G20N03K

N30V,RD(MAX)<20M@10V,RD(MAX)<24M

Goford Semiconductor
4,765 -

RFQ

G20N03K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 20mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 923 pF @ 15 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW33N60M6

STW33N60M6

MOSFET N-CH 600V TO247

STMicroelectronics
2,706 -

RFQ

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tj) - - - - - - - - - Through Hole
PMK50XP,518

PMK50XP,518

NEXPERIA PMK50XP - 7.9A, 20V, 0.

NXP Semiconductors
56,081 -

RFQ

PMK50XP,518

Ficha técnica

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 7.9A (Tc) 4.5V 50mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±12V 1020 pF @ 20 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2301-3A

SI2301-3A

MOSFET SOT-23 P Channel 20V

MDD
318,000 -

RFQ

SI2301-3A

Ficha técnica

Tape & Reel (TR) SOT-23 Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 3.3V, 4.5V 90mOhm @ 3A, 4.5V 1V @ 250µA 6.6 nC @ 10 V ±10V 330 pF @ 10 V - 225mW (Ta) -55°C ~ 150°C Surface Mount
MCH3322-EBM-TL-E

MCH3322-EBM-TL-E

P-CHANNEL SILICON MOSFET FOR GEN

Sanyo
39,000 -

RFQ

MCH3322-EBM-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMPB33XP,115

PMPB33XP,115

NEXPERIA PMPB33XP - 5.5A, 20V, 0

Nexperia USA Inc.
21,172 -

RFQ

PMPB33XP,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 37mOhm @ 5.5A, 4.5V 900mV @ 250µA 23 nC @ 4.5 V ±12V 1575 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RV4E031RPTCR1

RV4E031RPTCR1

MOSFET P-CH 30V 3.1A DFN1616-6

Rohm Semiconductor
3,692 -

RFQ

RV4E031RPTCR1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 4.5V, 10V 105mOhm @ 3.1A, 10V 2.5V @ 1mA 4.8 nC @ 5 V ±20V 460 pF @ 10 V - 1.5W 150°C (TJ) Surface Mount, Wettable Flank
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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