Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJMF900N60EC_T0_00001

PJMF900N60EC_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.
2,000 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 900mOhm @ 2.3A, 10V 4V @ 250µA 8.8 nC @ 10 V ±30V 310 pF @ 400 V - 22.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMD990N65EC_L2_00001

PJMD990N65EC_L2_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.
6,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 990mOhm @ 2A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 306 pF @ 400 V - 47.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJMD390N65EC_L2_00001

PJMD390N65EC_L2_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.
6,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 726 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMP075N15NS1_T0_00601

PSMP075N15NS1_T0_00601

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
1,998 -

RFQ

PSMP075N15NS1_T0_00601

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 125A (Tc) 7V, 10V 7.5mOhm @ 50A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 6511 pF @ 75 V - 258.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJMF360N60EC_T0_00001

PJMF360N60EC_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.
2,000 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 18.7 nC @ 10 V ±30V 735 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMP130N65EC_T0_00001

PJMP130N65EC_T0_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.
2,000 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1920 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMP120N60EC_T0_00001

PJMP120N60EC_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.
1,998 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1960 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMF130N65EC_T0_00001

PJMF130N65EC_T0_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.
2,050 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1920 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMF120N60EC_T0_00001

PJMF120N60EC_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.
2,000 -

RFQ

PJMF120N60EC_T0_00001

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1960 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMB130N65EC_R2_00601

PJMB130N65EC_R2_00601

650V/ 130MOHM / 29A/ EASY TO DRI

Panjit International Inc.
2,284 -

RFQ

PJMB130N65EC_R2_00601

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1920 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJF7NA60_T0_00001

PJF7NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.
2,000 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 15.2 nC @ 10 V ±30V 723 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF10NA60_T0_00001

PJF10NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.
1,750 -

RFQ

PJF10NA60_T0_00001

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 900mOhm @ 5A, 10V 4V @ 250µA 23 nC @ 10 V ±30V 1192 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJP5NA80_T0_00001

PJP5NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.
1,600 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5A (Ta) 10V 2.7Ohm @ 2.5A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 660 pF @ 25 V - 146W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF6NA90_T0_00001

PJF6NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.
1,998 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Ta) 10V 2.3Ohm @ 3A, 10V 4V @ 250µA 23.6 nC @ 10 V ±30V 915 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJP6NA90_T0_00001

PJP6NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.
1,990 -

RFQ

PJP6NA90_T0_00001

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Ta) 10V 2.3Ohm @ 3A, 10V 4V @ 250µA 23.6 nC @ 10 V ±30V 915 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJP10NA65_T0_00001

PJP10NA65_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.
2,482 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 1200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF4NA70_T0_00001

PJF4NA70_T0_00001

700V N-CHANNEL MOSFET

Panjit International Inc.
2,300 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 4A (Ta) 10V 2.8Ohm @ 2A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 514 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF4NA90_T0_00001

PJF4NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.
2,053 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4A (Ta) 10V 3.4Ohm @ 2A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 710 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJP10NA80_T0_00001

PJP10NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.
3,367 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1.15Ohm @ 5A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1517 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF5NA50_T0_00001

PJF5NA50_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.
2,676 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.55Ohm @ 2.5A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 491 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 534 Record«Prev1... 1516171819202122...27Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario