Transistores - FET, MOSFET - RF

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
BLA9G1011L-300GU

BLA9G1011L-300GU

RF MOSFET LDMOS 32V SOT502F

Ampleon USA Inc.
3,701 -

RFQ

BLA9G1011L-300GU

Ficha técnica

Tray - Active LDMOS 1.03GHz ~ 1.09GHz 21.8dB 32 V 4.2µA - 100 mA 317W -
CGHV40320D-GP4

CGHV40320D-GP4

RF MOSFET HEMT 50V DIE

Wolfspeed, Inc.
3,058 -

RFQ

CGHV40320D-GP4

Ficha técnica

Tray GaN Active HEMT 4GHz 19dB 50 V - - 500 mA 320W 150 V
IGN1214L500B

IGN1214L500B

GAN, RF POWER TRANSISTOR, L-BAND

Integra Technologies Inc.
3,639 -

RFQ

IGN1214L500B

Ficha técnica

Tray - Active HEMT 1.2GHz ~ 1.4GHz 15dB 50 V - - 200 mA 650W 160 V
2N5950

2N5950

SMALL SIGNAL FET

Fairchild Semiconductor
2,191 -

RFQ

2N5950

Ficha técnica

Bulk - Obsolete N-Channel JFET - - - 15mA - - - 30 V
MCH6654-TL-E

MCH6654-TL-E

NCH+NCH 1.8 DRIVE SERIES

onsemi
3,778 -

RFQ

Bulk * Active - - - - - - - - -
MCH6655-TL-E

MCH6655-TL-E

PCH+PCH 4V DRIVE SERIES

onsemi
2,317 -

RFQ

Bulk * Active - - - - - - - - -
BF909AR215

BF909AR215

MOSFET N-CH SOT-143R

NXP USA Inc.
2,251 -

RFQ

BF909AR215

Ficha técnica

Bulk - Active MESFET Dual Gate 800MHz - - 40mA 2dB - - 7 V
BF909A215

BF909A215

MOSFET N-CH SOT-143B

NXP USA Inc.
2,306 -

RFQ

BF909A215

Ficha técnica

Bulk - Active N-Channel Dual Gate 800MHz - - 40mA 2dB - - 7 V
2N5486

2N5486

T-JFET N CHANNEL

NTE Electronics, Inc
2,777 -

RFQ

2N5486

Ficha técnica

Bag - Active N-Channel JFET 400MHz - 15 V 30mA 4dB 4 mA - 25 V
MPIC2112DW

MPIC2112DW

MPIC2112DW

onsemi
2,965 -

RFQ

MPIC2112DW

Ficha técnica

Bulk * Active - - - - - - - - -
NE3509M04-T2-A

NE3509M04-T2-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,494 -

RFQ

Bulk - Obsolete HFET 2GHz 17.5dB 2 V 60mA 0.4dB 10 mA 11dBm 4 V
NE3517S03-T1C-A

NE3517S03-T1C-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
3,574 -

RFQ

NE3517S03-T1C-A

Ficha técnica

Bulk - Obsolete HFET 20GHz 13.5dB 2 V 15mA 0.7dB 10 mA - 4 V
NE5550779A-T1-A

NE5550779A-T1-A

RF POWER N-CHANNEL, MOSFET

Renesas Electronics America Inc
2,389 -

RFQ

NE5550779A-T1-A

Ficha técnica

Bulk - Obsolete LDMOS 900MHz 22dB 7.5 V 2.1A - 140 mA 38.5dBm 30 V
NE3514S02-T1D-A

NE3514S02-T1D-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
3,224 -

RFQ

Bulk - Obsolete HFET 20GHz 10dB 2 V 70mA 0.75dB 10 mA - 4 V
CLF1G0035-200PU

CLF1G0035-200PU

RF TRANSISTOR

NXP USA Inc.
2,954 -

RFQ

Tray - Obsolete - - - - - - - - -
NE5531079A-T1-A

NE5531079A-T1-A

RF MOSFET N-CHANNEL, 30V, 3A

Renesas Electronics America Inc
3,097 -

RFQ

Bulk - Obsolete LDMOS 460MHz - 7.5 V 3A - 200 mA 40dBm 30 V
2N5245

2N5245

SMALL SIGNAL FET

Fairchild Semiconductor
2,625 -

RFQ

2N5245

Ficha técnica

Bulk - Obsolete N-Channel JFET - - - 15mA - - - 30 V
NE3515S02-T1C-A

NE3515S02-T1C-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
3,833 -

RFQ

Bulk - Obsolete HFET 12GHz 12.5dB 2 V 88mA 0.3dB 10 mA 14dBm 4 V
2SK853A-T1-A

2SK853A-T1-A

SMALL SIGNAL FET

Renesas Electronics America Inc
3,288 -

RFQ

2SK853A-T1-A

Ficha técnica

Bulk * Obsolete - - - - - - - - -
30C01S-TL-E

30C01S-TL-E

BIP NPN 0.4A 30V

onsemi
2,940 -

RFQ

Bulk * Obsolete - - - - - - - - -
Total 2777 Record«Prev1... 6364656667686970...139Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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