Transistores - FET, MOSFET - RF

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
C4H18W500AY

C4H18W500AY

C4H18W500AY/SOT1273/REELD

Ampleon USA Inc.
3,620 -

RFQ

C4H18W500AY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Source 1.8GHz ~ 2GHz 14.6dB 48 V - - 350 mA 500W 150 V
C4H22W500AZ

C4H22W500AZ

C4H22W500AZ/SOT1273/TRAYD

Ampleon USA Inc.
3,045 -

RFQ

C4H22W500AZ

Ficha técnica

Tray - Active 2 N-Channel (Dual) Common Source 2.11GHz ~ 2.17GHz 16dB 50 V - - 450 mA 500W 150 V
MRF6VP41KHR5

MRF6VP41KHR5

RF N-CHANNEL, MOSFET

Freescale Semiconductor
553 -

RFQ

MRF6VP41KHR5

Ficha técnica

Bulk - Active LDMOS (Dual) 450MHz 20dB 50 V - - 150 mA 1000W 110 V
MRF6VP21KHR5

MRF6VP21KHR5

N-CHANNEL, MOSFET

Freescale Semiconductor
3,578 -

RFQ

MRF6VP21KHR5

Ficha técnica

Bulk - Active LDMOS (Dual) 235MHz 24dB 50 V 100µA - 150 mA 1000W 110 V
BLC8G27LS-140AV518-AMP

BLC8G27LS-140AV518-AMP

LDMOS RF POWER TRANSISTOR

Ampleon USA Inc.
2,238 -

RFQ

BLC8G27LS-140AV518-AMP

Ficha técnica

Bulk BLC Active LDMOS (Dual), Common Source 2.496GHz ~ 2.69GHz 14.5dB 28 V 1.4µA - 320 mA 140W 65 V
SMMBFJ310LT3G

SMMBFJ310LT3G

RF MOSFET N-CH JFET 10V SOT23

onsemi
3,786 -

RFQ

SMMBFJ310LT3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel JFET - 12dB 10 V 60mA - 10 mA - 25 V
SMMBFJ310LT1G

SMMBFJ310LT1G

RF MOSFET N-CH JFET 10V SOT23

onsemi
2,214 -

RFQ

SMMBFJ310LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel JFET - 12dB 10 V 60mA - 10 mA - 25 V
MMBFJ310LT3G

MMBFJ310LT3G

RF MOSFET N-CH JFET 10V SOT23

onsemi
3,714 -

RFQ

MMBFJ310LT3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel JFET - 12dB 10 V 60mA - 10 mA - 25 V
CE3521M4-C2

CE3521M4-C2

RF FET 4V 20GHZ SOT343

CEL
3,927 -

RFQ

CE3521M4-C2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active pHEMT FET 20GHz 11.9dB 2 V 15mA 1.05dB 10 mA 125mW 4 V
CE3520K3-C1

CE3520K3-C1

RF FET 4V 20GHZ 4MICROX

CEL
2,492 -

RFQ

CE3520K3-C1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active pHEMT FET 20GHz 13.8dB 2 V 15mA 0.8dB 10 mA 125mW 4 V
SAV-551+

SAV-551+

RF MOSFET E-PHEMT 3V SC70-4

Mini-Circuits
2,679 -

RFQ

SAV-551+

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active E-pHEMT 45MHz ~ 6GHz 20.9dB 3 V - 1.8dB @ 5.8GHz 15 mA 20dBm 5 V
AFM906NT1

AFM906NT1

RF MOSFET LDMOS 10.8V 16DFN

NXP USA Inc.
174 -

RFQ

AFM906NT1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 136MHz ~ 941MHz - 10.8 V 2µA - 100 mA 6.8W 30 V
TAV-541+

TAV-541+

RF MOSFET E-PHEMT 3V FG873

Mini-Circuits
427 -

RFQ

TAV-541+

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active E-pHEMT 450MHz ~ 6GHz 23.8dB 3 V - 1.8dB @ 5.8GHz 60 mA 21.1dB 5 V
TAV1-541+

TAV1-541+

RF MOSFET E-PHEMT 3V TE2769

Mini-Circuits
995 -

RFQ

TAV1-541+

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active E-pHEMT 45MHz ~ 6GHz 18.6dB 3 V - 1.4dB @ 5.8GHz 60 mA 18.6dBm 5 V
TAV2-14LN+

TAV2-14LN+

RF MOSFET E-PHEMT 4V

Mini-Circuits
3,918 -

RFQ

TAV2-14LN+

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active E-pHEMT 50MHz ~ 10GHz 23.4dB 4 V 2µA 2.5dB @ 50MHz 4 mA 19.4dBm 5 V
AFT05MS006NT1

AFT05MS006NT1

FET RF 30V 520MHZ PLD

NXP USA Inc.
3,554 -

RFQ

AFT05MS006NT1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs LDMOS 520MHz 18.3dB 7.5 V - - 100 mA 6W 30 V
PD84006L-E

PD84006L-E

FET RF 25V 870MHZ

STMicroelectronics
2,014 -

RFQ

PD84006L-E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete LDMOS 870MHz 15dB 7.5 V 5A - 150 mA 2W 25 V
AFT09MS015NT1

AFT09MS015NT1

RF MOSFET LDMOS 12.5V PLD1.5W

NXP USA Inc.
3,411 -

RFQ

AFT09MS015NT1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 870MHz 17.2dB 12.5 V - - 100 mA 16W 40 V
BLP8G27-5Z

BLP8G27-5Z

RF FET LDMOS 65V 18DB 16VDFN

Ampleon USA Inc.
716 -

RFQ

BLP8G27-5Z

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen LDMOS 2.14GHz 18dB 28 V - - 55 mA 750mW 65 V
MMRF1014NT1

MMRF1014NT1

FET RF 68V 1.96GHZ PLD-1.5

NXP USA Inc.
979 -

RFQ

MMRF1014NT1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.96GHz 18dB 28 V - - 50 mA 4W 68 V
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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