Más categorías de productos

Transistores - FET, MOSFET - RF

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
BLC10G22XS-603AVTY BLC10G22XS-603AVTY/SOT1258/REEL Ampleon USA Inc.	100	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	15.4dB	30 V	2.8µA	-	1.2 A	600W	65 V
MRF7S19120NR1 RF L BAND, N-CHANNEL , TO-270 Freescale Semiconductor	110	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	1.99GHz	18dB	28 V	-	-	1.2 A	36W	65 V
MMRF1305HR5 FET RF 2CH 133V 512MHZ NI-780-4 NXP USA Inc.	2,086	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	512MHz	26dB	50 V	-	-	100 mA	100W	133 V
MRF7S38040HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor	280	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	3.4GHz ~ 3.6GHz	14dB	30 V	-	-	450 mA	8W	65 V
MRF18060BLSR3 RF L BAND, N-CHANNEL Freescale Semiconductor	224	-	RFQ	Ficha técnica	Bulk	-	Active	N-Channel	1.93GHz ~ 1.99GHz	13dB	26 V	6µA	-	500 mA	60W	65 V
MWT-PH15F MED POWER ALGAAS/INGAAS PHEMT Microwave Technology Inc.	2,632	-	RFQ	Ficha técnica	Case	-	Active	MESFET	28GHz	12dB	4 V	170mA	-	170 mA	28.5dBm	6 V
BLF7G24LS-140,118 N-CHANNEL, MOSFET NXP USA Inc.	970	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	2.3GHz ~ 2.4GHz	18.5dB	28 V	28A	-	1.3 A	30W	65 V
MRF6S21100HR3 RF S BAND, N-CHANNEL Freescale Semiconductor	203	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	2.11GHz ~ 2.17GHz	15.9dB	28 V	10µA	-	950 mA	23W	68 V
MRF5S21150HR3 RF S BAND, N-CHANNEL Freescale Semiconductor	316	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	2.11GHz ~ 2.17GHz	12.5dB	28 V	-	-	1.3 A	33W	65 V
MRF8P23080HSR3 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor	450	-	RFQ	Ficha técnica	Bulk	-	Obsolete	LDMOS (Dual)	2.3GHz	14.6dB	28 V	-	-	280 mA	16W	65 V
MRF5S4140HR5 FET RF 65V 465MHZ NI-780 Freescale Semiconductor	640	-	RFQ		Bulk	-	Active	LDMOS	465MHz	21dB	28 V	-	-	1.25 A	28W	65 V
MRF5S4140HR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	248	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	465MHz	21dB	28 V	-	-	1.25 A	28W	65 V
MRF6S9130HSR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	3,815	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	880MHz	19.2dB	28 V	-	-	950 mA	27W	68 V
BLF7G20LS-90P,112 RF PFET, 2-ELEMENT, L BAND, SILI NXP USA Inc.	100	-	RFQ	Ficha técnica	Tube	-	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	19.5dB	28 V	2µA	-	550 mA	90W	65 V
MWE6IC9100NBR1-FR NARROW BAND HIGH POWER AMPLIFIER Freescale Semiconductor	3,000	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	869MHz ~ 960MHz	33.5dB	26 V	10µA	-	120 mA	100W	66 V
CGH60060D-GP4 RF MOSFET HEMT 28V DIE Wolfspeed, Inc.	3,781	-	RFQ	Ficha técnica	Tray	GaN	Not For New Designs	HEMT	6GHz	13dB	28 V	-	-	400 mA	60W	84 V
MRF7S21110HR3 RF S BAND, N-CHANNEL Freescale Semiconductor	3,553	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	2.17GHz	17.3dB	28 V	-	-	1.1 A	33W	65 V
MRF8S23120HR5 POWER, N-CHANNEL, MOSFET Freescale Semiconductor	195	-	RFQ	Ficha técnica	Bulk	-	Obsolete	LDMOS	2.3GHz	16dB	28 V	-	-	800 mA	28W	65 V
MRF8HP21130HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor	2,764	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS (Dual)	2.17GHz	14dB	28 V	-	-	360 mA	28W	65 V
CGH27030P 30W, GAN HEMT, 28V, DC-6.0GHZ, P Wolfspeed, Inc.	3,168	-	RFQ	Ficha técnica	Tray	GaN	Active	HEMT	2.3GHz ~ 2.9GHz	14.5dB	28 V	-	-	150 mA	30W	84 V