Transistores - FET, MOSFET - RF

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
UPA608T-T1-A

UPA608T-T1-A

SMALL SIGNAL FET

Renesas Electronics America Inc
3,025 -

RFQ

Bulk * Active - - - - - - - - -
2SJ562-TD-E

2SJ562-TD-E

PCH 2.5V DRIVE SERIES

onsemi
2,657 -

RFQ

Bulk * Active - - - - - - - - -
2SK3291-TD-E

2SK3291-TD-E

NCH 4V DRIVE SERIES

onsemi
2,209 -

RFQ

Bulk * Active - - - - - - - - -
VEC2301-TL-E

VEC2301-TL-E

PCH+PCH 2.5V DRIVE SERIES

onsemi
3,075 -

RFQ

Bulk * Active - - - - - - - - -
MCH3416-TL-E

MCH3416-TL-E

NCH 4V DRIVE SERIES

onsemi
2,748 -

RFQ

Bulk * Active - - - - - - - - -
BLF8G22LS-270U

BLF8G22LS-270U

RF FET LDMOS 65V 17.7DB SOT502B

Ampleon USA Inc.
2,763 -

RFQ

BLF8G22LS-270U

Ficha técnica

Tray - Last Time Buy LDMOS 2.11GHz ~ 2.17GHz 17.7dB 28 V - - 2.4 A 80W 65 V
C4H27W400AVY

C4H27W400AVY

C4H27W400AVY/SOT1275/REELD

Ampleon USA Inc.
3,208 -

RFQ

C4H27W400AVY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Source 2.3GHz ~ 2.7GHz 15dB 50 V - - 200 mA 400W 150 V
A2G35S200-01SR3

A2G35S200-01SR3

AIRFAST RF POWER GAN TRANSISTOR

NXP USA Inc.
160 -

RFQ

A2G35S200-01SR3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active GaN HEMT 3.4GHz ~ 3.6GHz 16.1dB 48 V - - 291 mA 180W 125 V
C4H22W500AY

C4H22W500AY

C4H22W500AY/SOT1273/REELD

Ampleon USA Inc.
3,978 -

RFQ

C4H22W500AY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Source 2.11GHz ~ 2.17GHz 16dB 50 V - - 450 mA 500W 150 V
A2T26H300-24SR6

A2T26H300-24SR6

IC TRANS RF LDMOS

NXP USA Inc.
2,795 -

RFQ

A2T26H300-24SR6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete LDMOS (Dual) 2.5GHz 14.5dB 28 V - - 800 mA 60W 65 V
MRF8P9040NR1

MRF8P9040NR1

RF POWER FIELD-EFFECT TRANSISTOR

Freescale Semiconductor
344 -

RFQ

MRF8P9040NR1

Ficha técnica

Bulk - Active LDMOS (Dual) 960MHz 19.1dB 28 V - - 320 mA 4W 70 V
A2I25D025NR1

A2I25D025NR1

A2I25D025 - AIRFAST RF POWER LDM

NXP Semiconductors
2,514 -

RFQ

Bulk - Obsolete LDMOS (Dual) 2.1GHz ~ 2.9GHz 31.9dB 28 V 10µA - 157 mA 3.2W 65 V
MMRF1304NR1

MMRF1304NR1

MMRF1304 - WIDEBAND RF POWER LDM

NXP Semiconductors
462 -

RFQ

Bulk - Obsolete LDMOS 1.8MHz ~ 2GHz 25.4dB 50 V 7µA - 10 mA 25W 133 V
BLM7G1822S-20PBY

BLM7G1822S-20PBY

BLM7G1822S-20PB - LDMOS 2-STAGE

NXP Semiconductors
2,327 -

RFQ

BLM7G1822S-20PBY

Ficha técnica

Bulk * Active - - - - - - - - -
MW7IC2040NR1

MW7IC2040NR1

NARROW BAND HIGH POWER AMPLIFIER

NXP Semiconductors
438 -

RFQ

Bulk - Obsolete LDMOS (Dual) 1.99GHz ~ 1.93GHz, 1.88GHz ~ 1.805GHz 32dB 28 V 10µA - 330 mA 4W 65 V
NE3520S03-T1C-A

NE3520S03-T1C-A

RF K BAND, GALLIUM ARSENIDE, N-C

Renesas Electronics America Inc
2,094 -

RFQ

NE3520S03-T1C-A

Ficha técnica

Bulk - Active HFET 20GHz 13.5dB 2 V 70mA - - - 4 V
FW363-TL-E

FW363-TL-E

PCH+NCH 4V DRIVE SERIES

onsemi
3,487 -

RFQ

Bulk * Active - - - - - - - - -
2SK2617ALS-CB11

2SK2617ALS-CB11

NCH 15V DRIVE SERIES

onsemi
3,153 -

RFQ

2SK2617ALS-CB11

Ficha técnica

Bulk * Active - - - - - - - - -
2SK1645V-03-TR-E

2SK1645V-03-TR-E

GAAS MESFET 0.1A 6V

onsemi
3,304 -

RFQ

Bulk * Active - - - - - - - - -
2SK1420-SSO-UR10

2SK1420-SSO-UR10

NCH 10V DRIVE SERIES

onsemi
3,060 -

RFQ

2SK1420-SSO-UR10

Ficha técnica

Bulk * Active - - - - - - - - -
Total 2777 Record«Prev1... 1011121314151617...139Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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