Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
2N7002VA

2N7002VA

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,571 -

RFQ

2N7002VA

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Logic Level Gate 60V 280mA 7.5Ohm @ 50mA, 5V 2.5V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) Surface Mount
FDMD8540L

FDMD8540L

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,091 -

RFQ

Bulk PowerTrench® Active 2 N-Channel (Half Bridge) Standard 40V 33A, 156A 1.5mOhm @ 33A, 10V 3V @ 250µA 113nC @ 10V 7940pF @ 20V 2.3W -55°C ~ 150°C (TJ) Surface Mount
FDME1023PZT

FDME1023PZT

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,971 -

RFQ

Bulk PowerTrench® Active 2 P-Channel (Dual) Logic Level Gate 20V 2.6A 142mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7nC @ 4.5V 405pF @ 10V 600mW -55°C ~ 150°C (TJ) Surface Mount
NDS9952A

NDS9952A

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,266 -

RFQ

NDS9952A

Ficha técnica

Bulk - Active N and P-Channel Logic Level Gate 30V 3.7A, 2.9A 80mOhm @ 1A, 10V 2.8V @ 250µA 25nC @ 10V 320pF @ 10V 900mW -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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