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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTMFD5C650NLT1GT6 60V LL S08FL DS onsemi |
3,711 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 2 N-Channel (Dual) | Standard | 60V | 21A (Ta), 111A (Tc) | 4.2mOhm @ 20A, 10V | 2.2V @ 98µA | 37nC @ 10V | 2546pF @ 25V | 3.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FTCO3V455A1MOSFET 6N-CH 40V 150A MODULE onsemi |
2,470 | - |
RFQ |
Ficha técnica |
Tube | SPM® | Obsolete | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 40V | 150A | 1.66mOhm @ 80A, 10V | - | - | - | 115W | 175°C (TJ) | Through Hole |
|
NXH040P120MNF1PGPIM F1 SIC HALFBRIDGE 1200V 40MO onsemi |
2,480 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH020P120MNF1PGPIM F1 SIC HALFBRIDGE 1200V 20MO onsemi |
3,389 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH040F120MNF1PGPIM F1 SIC FULL BRIDGE 1200V 40M onsemi |
3,460 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
NXH010P90MNF1PGPIM F1 SIC HALFBRIDGE 900V 10MOH onsemi |
3,066 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH010P120MNF1PTNGPIM F1 SIC HALFBRIDGE 1200V 10MO onsemi |
3,864 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
NXH010P120MNF1PNGPIM F1 SIC HALFBRIDGE 1200V 10MO onsemi |
3,197 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
NXH010P120MNF1PGPIM F1 SIC HALFBRIDGE 1200V 10MO onsemi |
2,167 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH020F120MNF1PGPIM F1 SIC FULL BRIDGE 1200V 20M onsemi |
3,537 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 4 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
FDC6321CDUAL N & P CHANNEL DIGITAL FET 2 onsemi |
3,028 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
FDG6321C-F169DUAL N & P CHANNEL DIGITAL FET 2 onsemi |
2,750 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
FW297-TL-2WMOSFET 2N-CH 60V 4.5A 8SOIC onsemi |
2,385 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate, 4V Drive | 60V | 4.5A | 58mOhm @ 4.5A, 10V | 2.6V @ 1mA | 14nC @ 10V | 750pF @ 20V | 1.8W | 150°C (TJ) | Surface Mount |
|
FDS6911MOSFET 2N-CH 20V 7.5A 8SOIC onsemi |
3,749 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7.5A | 13mOhm @ 7.5A, 10V | 3V @ 250µA | 24nC @ 10V | 1130pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI9955DYMOSFET 2N-CH 50V 3A 8-SOIC onsemi |
3,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | 2 N-Channel (Dual) | Standard | 50V | 3A | 130mOhm @ 3A, 10V | 1V @ 250µA | 30nC @ 10V | 345pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
MMDF2C03HDR2MOSFET N/P-CH 30V 4.1A/3A 8SOIC onsemi |
2,114 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N and P-Channel | Logic Level Gate | 30V | 4.1A, 3A | 70mOhm @ 3A, 10V | 3V @ 250µA | 16nC @ 10V | 630pF @ 24V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
MMDF2P02HDR2MOSFET 2P-CH 20V 3.3A 8-SOIC onsemi |
3,655 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.3A | 160mOhm @ 2A, 10V | 2V @ 250µA | 20nC @ 10V | 588pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTJD2152PT1GMOSFET 2P-CH 8V 0.775A SOT-363 onsemi |
3,932 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 8V | 775mA | 300mOhm @ 570mA, 4.5V | 1V @ 250µA | 4nC @ 4.5V | 225pF @ 8V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTHD4401PT3GMOSFET 2P-CH 20V 2.1A CHIPFET onsemi |
2,700 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.1A | 155mOhm @ 2.1A, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | 300pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTQD4154ZR2MOSFET 2N-CH 20V 7.5A 8-TSSOP onsemi |
2,697 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7.5A | 19mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 21.5nC @ 4.5V | 1485pF @ 16V | 1.52W | -55°C ~ 150°C (TJ) | Surface Mount |
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