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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UT6JA2TCR-30V PCH+PCH MIDDLE POWER MOSFET Rohm Semiconductor |
3,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | - | 30V | 4A | 70mOhm @ 4A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
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SH8KA4TB30V NCH+NCH MIDDLE POWER MOSFET Rohm Semiconductor |
2,053 | - |
RFQ |
Ficha técnica |
Cut Tape (CT) | - | Not For New Designs | 2 N-Channel (Dual) | - | 30V | 9A | 21.4mOhm @ 9A, 10V | 2.5V @ 1mA | 15.5nC @ 10V | 640pF @ 15V | 3W | -55°C ~ 150°C (TJ) | Surface Mount |
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TT8J2TRMOSFET 2P-CH 30V 2.5A TSST8 Rohm Semiconductor |
2,221 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.5A | 84mOhm @ 2.5A, 10V | 2.5V @ 1mA | 4.8nC @ 5V | 460pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount |
|
QH8K26TRQH8K26 IS LOW ON-RESISTANCE AND Rohm Semiconductor |
2,075 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 40V | 7A (Ta) | 38mOhm @ 7A, 10V | 2.5V @ 1mA | 2.9nC @ 5V | 275pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount |
|
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QS8M13TCRMOSFET N/P-CH 30V 6A/5A TSMT8 Rohm Semiconductor |
2,198 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Logic Level Gate | 30V | 6A, 5A | 28mOhm @ 6A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 390pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount |
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QS8J4TRMOSFET 2P-CH 30V 4A TSMT8 Rohm Semiconductor |
2,812 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4A | 56mOhm @ 4A, 10V | 2.5V @ 1mA | 13nC @ 10V | 800pF @ 10V | 550mW | 150°C (TJ) | Surface Mount |
|
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SP8K1FRATB30V NCH+NCH POWER MOSFET - SP8K1 Rohm Semiconductor |
3,705 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 30V | 5A (Ta) | 51mOhm @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 230pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount |
|
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QH8JB5TCR-40V DUAL PCH+PCH SMALL SIGNAL M Rohm Semiconductor |
800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Standard | 40V | 5A (Ta) | 41mOhm @ 5A, 10V | 2.5V @ 1mA | 17.2nC @ 10V | 920pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount |
|
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SH8K10SGZETBSH8K10S IS A POWER MOSFET WITH L Rohm Semiconductor |
2,778 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | 2 N-Channel (Dual) | Standard | 30V | 7A (Ta), 8.5A (Ta) | 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V | 2.5V @ 1mA | 16.8nC @ 5V, 17.8nC @ 5V | 660pF @ 10V, 830pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount |
|
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SP8K3FRATB30V NCH+NCH POWER MOSFET - SP8K3 Rohm Semiconductor |
2,193 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 30V | 7A (Ta) | 24mOhm @ 7A, 10V | 2.5V @ 1mA | 11.8nC @ 5V | 600pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount |
|
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SP8M10FRATB4V DRIVE NCH+PCH MOSFET (AEC-Q10 Rohm Semiconductor |
2,797 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N and P-Channel | Logic Level Gate, 4V Drive | 30V | 7A (Ta), 4.5A (Ta) | 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V | 2.5V @ 1mA | 8.4nC @ 5V, 8.5nC @ 5V | 600pF @ 10V, 850pF @ 10V | 2W (Ta) | 150°C | Surface Mount |
|
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SP8M5FRATB4V DRIVE NCH+PCH MOSFET Rohm Semiconductor |
3,940 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N and P-Channel | Standard | 30V | 6A (Ta), 7A (Ta) | 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V | 2.5V @ 1mA | 7.2nC @ 5V, 25nC @ 5V | 520pF @ 10V, 2600pF @ 10V | 2W | 150°C (TJ) | Surface Mount |
|
BSM250D17P2E004HALF BRIDGE MODULE CONSISTING OF Rohm Semiconductor |
3,367 | - |
RFQ |
Ficha técnica |
Box | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 250A (Tc) | - | 4V @ 66mA | - | 30000pF @ 10V | 1800W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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BSM080D12P2C008SIC POWER MODULE-1200V-80A Rohm Semiconductor |
2,074 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 80A (Tc) | - | 4V @ 13.2mA | - | 800pF @ 10V | 600W | 175°C (TJ) | Chassis Mount |
|
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BSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE Rohm Semiconductor |
2,088 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 120A (Tc) | - | 2.7V @ 22mA | - | 14000pF @ 10V | 780W | -40°C ~ 150°C (TJ) | - |
|
BSM180D12P2E0021200V, 204A, HALF BRIDGE, SILICO Rohm Semiconductor |
3,883 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 204A (Tc) | - | 4V @ 35.2mA | - | 18000pF @ 10V | 1360W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSM300D12P3E005SILICON CARBIDE POWER MODULE. B Rohm Semiconductor |
2,760 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 300A (Tc) | - | 5.6V @ 91mA | - | 14000pF @ 10V | 1260W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSM600D12P3G0011200V, 576A, HALF BRIDGE, FULL S Rohm Semiconductor |
2,330 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 600A (Tc) | - | 5.6V @ 182mA | - | 31000pF @ 10V | 2450W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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BSM120C12P2C2011200V, 134A, CHOPPER, SILICON-CA Rohm Semiconductor |
3,797 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 134A (Tc) | - | 4V @ 22mA | - | 14000pF @ 10V | 935W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
BSM180D12P2C101MOSFET 2N-CH 1200V 180A MODULE Rohm Semiconductor |
2,503 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 204A (Tc) | - | 4V @ 35.2mA | - | 23000pF @ 10V | 1130W | -40°C ~ 150°C (TJ) | - |
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