Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
APTC60AM18SCG

APTC60AM18SCG

MOSFET 2N-CH 600V 143A SP6

Microchip Technology
2,690 -

RFQ

APTC60AM18SCG

Ficha técnica

Bulk CoolMOS™ Active 2 N-Channel (Half Bridge) Standard 600V 143A 18mOhm @ 71.5A, 10V 3.9V @ 4mA 1036nC @ 10V 28000pF @ 25V 833W -40°C ~ 150°C (TJ) Chassis Mount
APTM120DU15G

APTM120DU15G

MOSFET 2N-CH 1200V 60A SP6

Microchip Technology
3,734 -

RFQ

APTM120DU15G

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Standard 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
MSCC60VRM45TAPG

MSCC60VRM45TAPG

PM-MOSFET-COOLMOS-SP6P

Microchip Technology
2,600 -

RFQ

MSCC60VRM45TAPG

Ficha técnica

Tube - Active - - 600V 40A (Tc) - - - - - - Chassis Mount
APTM10AM02FG

APTM10AM02FG

MOSFET 2N-CH 100V 495A SP6

Microchip Technology
3,800 -

RFQ

APTM10AM02FG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
APTM20HM08FG

APTM20HM08FG

MOSFET 4N-CH 200V 208A SP6

Microchip Technology
3,198 -

RFQ

APTM20HM08FG

Ficha técnica

Bulk - Active 4 N-Channel (Half Bridge) Standard 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) Chassis Mount
APTM50AM17FG

APTM50AM17FG

MOSFET 2N-CH 500V 180A SP6

Microchip Technology
2,593 -

RFQ

APTM50AM17FG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 500V 180A 20mOhm @ 90A, 10V 5V @ 10mA 560nC @ 10V 28000pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
APTM100A13SCG

APTM100A13SCG

MOSFET 2N-CH 1000V 65A SP6

Microchip Technology
3,369 -

RFQ

APTM100A13SCG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
APTM50HM35FG

APTM50HM35FG

MOSFET 4N-CH 500V 99A SP6

Microchip Technology
3,065 -

RFQ

APTM50HM35FG

Ficha técnica

Bulk - Active 4 N-Channel (Half Bridge) Standard 500V 99A 39mOhm @ 49.5A, 10V 5V @ 5mA 280nC @ 10V 14000pF @ 25V 781W -40°C ~ 150°C (TJ) Chassis Mount
APTM100AM90FG

APTM100AM90FG

MOSFET 2N-CH 1000V 78A SP6

Microchip Technology
3,218 -

RFQ

APTM100AM90FG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 1000V (1kV) 78A 105mOhm @ 39A, 10V 5V @ 10mA 744nC @ 10V 20700pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
APTM120A15FG

APTM120A15FG

MOSFET 2N-CH 1200V 60A SP6

Microchip Technology
2,895 -

RFQ

APTM120A15FG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
APTM100H18FG

APTM100H18FG

MOSFET 4N-CH 1000V 43A SP6

Microchip Technology
2,820 -

RFQ

APTM100H18FG

Ficha técnica

Bulk - Active 4 N-Channel (Half Bridge) Standard 1000V (1kV) 43A 210mOhm @ 21.5A, 10V 5V @ 5mA 372nC @ 10V 10400pF @ 25V 780W -40°C ~ 150°C (TJ) Chassis Mount
APTM120H29FG

APTM120H29FG

MOSFET 4N-CH 1200V 34A SP6

Microchip Technology
3,415 -

RFQ

APTM120H29FG

Ficha técnica

Bulk POWER MOS 7® Active 4 N-Channel (Half Bridge) Standard 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) Chassis Mount
APTM100TA35SCTPG

APTM100TA35SCTPG

MOSFET 6N-CH 1000V 22A SP6P

Microchip Technology
2,615 -

RFQ

APTM100TA35SCTPG

Ficha técnica

Bulk POWER MOS 7® Active 6 N-Channel (3-Phase Bridge) Standard 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) Chassis Mount
MSCSM120HM16CT3AG

MSCSM120HM16CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
2,264 -

RFQ

MSCSM120HM16CT3AG

Ficha técnica

Tube - Active 4 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
APTC60TAM21SCTPAG

APTC60TAM21SCTPAG

MOSFET 6N-CH 600V 116A SP6-P

Microchip Technology
2,309 -

RFQ

APTC60TAM21SCTPAG

Ficha técnica

Bulk CoolMOS™ Active 6 N-Channel (3-Phase Bridge) Standard 600V 116A 21mOhm @ 88A, 10V 3.6V @ 6mA 580nC @ 10V 13000pF @ 100V 625W -40°C ~ 150°C (TJ) Chassis Mount
MSCSM70HM05CAG

MSCSM70HM05CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,343 -

RFQ

Bulk - Active - - - - - - - - - - -
MSCSM70TAM10CTPAG

MSCSM70TAM10CTPAG

PM-MOSFET-SIC-SBD~-SP6P

Microchip Technology
3,734 -

RFQ

MSCSM70TAM10CTPAG

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70AM025CT6AG

MSCSM70AM025CT6AG

PM-MOSFET-SIC-SBD~-SP6C

Microchip Technology
3,012 -

RFQ

MSCSM70AM025CT6AG

Ficha técnica

Tube - Active - - 700V 538A (Tc) - - - - - - Chassis Mount
MSCSM120TAM16CTPAG

MSCSM120TAM16CTPAG

PM-MOSFET-SIC-SBD~-SP6P

Microchip Technology
3,859 -

RFQ

MSCSM120TAM16CTPAG

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120HM083CAG

MSCSM120HM083CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,259 -

RFQ

Bulk - Active - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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