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0Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7964DP-T1-E3MOSFET 2N-CH 60V 6.1A PPAK SO-8 Vishay Siliconix |
3,131 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Standard | 60V | 6.1A | 23mOhm @ 9.6A, 10V | 4.5V @ 250µA | 65nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
SI7983DP-T1-E3MOSFET 2P-CH 20V 7.7A PPAK SO-8 Vishay Siliconix |
2,986 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 7.7A | 17mOhm @ 12A, 4.5V | 1V @ 600µA | 74nC @ 4.5V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI8900EDB-T2-E1MOSFET 2N-CH 20V 5.4A 10-MFP Vishay Siliconix |
3,538 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TrenchFET® | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 5.4A | - | 1V @ 1.1mA | - | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI8901EDB-T2-E1MOSFET 2P-CH 20V 3.5A 6-MFP Vishay Siliconix |
2,731 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) Common Drain | Logic Level Gate | 20V | 3.5A | - | 1V @ 350µA | - | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI8902EDB-T2-E1MOSFET 2N-CH 20V 3.9A 6-MFP Vishay Siliconix |
3,043 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 3.9A | - | 1V @ 980µA | - | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI8904EDB-T2-E1MOSFET 2N-CH 30V 3.8A 6-MFP Vishay Siliconix |
3,023 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 30V | 3.8A | - | 1.6V @ 250µA | - | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI9926BDY-T1-E3MOSFET 2N-CH 20V 6.2A 8-SOIC Vishay Siliconix |
3,984 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.2A | 20mOhm @ 8.2A, 4.5V | 1.5V @ 250µA | 20nC @ 4.5V | - | 1.14W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI9933BDY-T1-E3MOSFET 2P-CH 20V 3.6A 8-SOIC Vishay Siliconix |
2,851 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.6A | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI9934BDY-T1-E3MOSFET 2P-CH 12V 4.8A 8-SOIC Vishay Siliconix |
2,301 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 12V | 4.8A | 35mOhm @ 6.4A, 4.5V | 1.4V @ 250µA | 20nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIA911DJ-T1-E3MOSFET 2P-CH 20V 4.5A SC70-6 Vishay Siliconix |
2,955 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Standard | 20V | 4.5A | 94mOhm @ 2.8A, 4.5V | 1V @ 250µA | 12.8nC @ 8V | 355pF @ 10V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA914DJ-T1-E3MOSFET 2N-CH 20V 4.5A SC70-6 Vishay Siliconix |
3,873 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 53mOhm @ 3.7A, 4.5V | 1V @ 250µA | 11.5nC @ 8V | 400pF @ 10V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIB911DK-T1-E3MOSFET 2P-CH 20V 2.6A SC75-6 Vishay Siliconix |
2,498 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Standard | 20V | 2.6A | 295mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4nC @ 8V | 115pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIF902EDZ-T1-E3MOSFET 2N-CH 20V 7A 6-POWERPAK Vishay Siliconix |
2,872 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 7A | 22mOhm @ 7A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | - | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIF912EDZ-T1-E3MOSFET 2N-CH 30V 7.4A 6-POWERPAK Vishay Siliconix |
2,865 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 30V | 7.4A | 19mOhm @ 7.4A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | - | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI5519DU-T1-GE3MOSFET N/P-CH 20V 6A CHIPFETS Vishay Siliconix |
3,206 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | N and P-Channel | Standard | 20V | 6A | 36mOhm @ 6.1A, 4.5V | 1.8V @ 250µA | 17.5nC @ 10V | 660pF @ 10V | 10.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7224DN-T1-GE3MOSFET 2N-CH 30V 6A PPAK 1212-8 Vishay Siliconix |
2,578 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 35mOhm @ 6.5A, 10V | 2.2V @ 250µA | 14.5nC @ 10V | 570pF @ 15V | 17.8W, 23W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7905DN-T1-GE3MOSFET 2P-CH 40V 6A PPAK 1212-8 Vishay Siliconix |
3,274 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Standard | 40V | 6A | 60mOhm @ 5A, 10V | 3V @ 250µA | 30nC @ 10V | 880pF @ 20V | 20.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7940DP-T1-GE3MOSFET 2N-CH 12V 7.6A PPAK SO-8 Vishay Siliconix |
2,634 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 12V | 7.6A | 17mOhm @ 11.8A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7948DP-T1-GE3MOSFET 2N-CH 60V 3A PPAK SO-8 Vishay Siliconix |
3,348 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 60V | 3A | 75mOhm @ 4.6A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA511DJ-T1-GE3MOSFET N/P-CH 12V 4.5A SC70-6 Vishay Siliconix |
2,839 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | N and P-Channel | Logic Level Gate | 12V | 4.5A | 40mOhm @ 4.2A, 4.5V | 1V @ 250µA | 12nC @ 8V | 400pF @ 6V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount |
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