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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7900AEDN-T1-GE3MOSFET 2N-CH 20V 6A PPAK 1212-8 Vishay Siliconix |
2,994 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6A | 26mOhm @ 8.5A, 4.5V | 900mV @ 250µA | 16nC @ 4.5V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJB60EP-T2_GE3DUAL N-CHANNEL 60-V (D-S) 175C M Vishay Siliconix |
2,022 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 60V | 30A (Tc) | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1600pF @ 25V | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQJ844AEP-T1_GE3MOSFET 2N-CH 30V 8A PPAK SO-8 Vishay Siliconix |
2,498 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 8A | 16.6mOhm @ 7.6A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1161pF @ 15V | 48W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQJ942EP-T1_GE3MOSFET 2 N-CH 40V POWERPAK SO8 Vishay Siliconix |
2,149 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 15A (Tc), 45A (Tc) | 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V | 2.3V @ 250µA | 19.7nC @ 10V, 33.8nC @ 10V | 809pF @ 20V, 1451pF @ 20V | 17W, 48W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQJ910AEP-T2_GE3DUAL N-CHANNEL 30-V (D-S) 175C M Vishay Siliconix |
2,830 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 30A (Tc) | 7mOhm @ 12A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1869pF @ 15V | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIZF918DT-T1-GE3MOSFET DUAL N-CH 30V POWERPAIR 6 Vishay Siliconix |
3,297 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual), Schottky | Standard | 30V | 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V | 2.4V @ 250µA, 2.3V @ 250µA | 22nC @ 10V, 56nC @ 10V | 1060pF @ 15V, 2650pF @ 15V | 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJ202EP-T1_GE3MOSFET 2N-CH 12V 20A/60A PPAK SO Vishay Siliconix |
3,216 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 12V | 20A, 60A | 6.5mOhm @ 15A, 10V | 2V @ 250µA | 22nC @ 10V | 975pF @ 6V | 27W, 48W | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIZ720DT-T1-GE3MOSFET 2N-CH 20V 16A POWERPAIR Vishay Siliconix |
3,439 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TrenchFET® | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 20V | 16A | 8.7mOhm @ 16.8A, 10V | 2V @ 250µA | 23nC @ 10V | 825pF @ 10V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIZF914DT-T1-GE3DUAL N-CH 25-V (D-S) MOSFET W/SC Vishay Siliconix |
3,090 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | PowerPAIR®, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 25V | 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V | 2.4V @ 250µA, 2.2V @ 250µA | 21nC @ 10V, 98nC @ 10V | 1050pF @ 10V, 4670pF @ 10V | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4925BDY-T1-GE3MOSFET 2P-CH 30V 5.3A 8-SOIC Vishay Siliconix |
3,456 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 5.3A | 25mOhm @ 7.1A, 10V | 3V @ 250µA | 50nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4963BDY-T1-GE3MOSFET 2P-CH 20V 4.9A 8SOIC Vishay Siliconix |
2,988 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.9A | 32mOhm @ 6.5A, 4.5V | 1.4V @ 250µA | 21nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIS590DN-T1-GE3COMBO N- & P-CHANNEL 100 V (D-S) Vishay Siliconix |
2,601 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Standard | 100V | 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) | 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V | 2.5V @ 250µA | - | - | 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4936ADY-T1-GE3MOSFET 2N-CH 30V 4.4A 8-SOIC Vishay Siliconix |
3,658 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.4A | 36mOhm @ 5.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7946ADP-T1-GE3MOSFET 2 N-CH 150V POWERPAK SO8 Vishay Siliconix |
2,164 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 150V | 7.7A (Tc) | 186mOhm @ 3A, 10V | 3.5V @ 250µA | 6.5nC @ 7.5V | 230pF @ 75V | 19.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJQ900E-T1_GE3MOSFET 2 N-CH 40V POWERPAK8X8 Vishay Siliconix |
3,665 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 100A (Tc) | 3.9mOhm @ 20A, 10V | 2.5V @ 250µA | 120nC @ 10V | 5900pF @ 20V | 75W | -55°C ~ 175°C (TJ) | Surface Mount |
|
SI1016X-T1-E3MOSFET N/P-CH 20V SOT563F Vishay Siliconix |
2,240 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | N and P-Channel | Logic Level Gate | 20V | 485mA, 370mA | 700mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1023X-T1-E3MOSFET 2P-CH 20V 0.37A SOT563F Vishay Siliconix |
2,732 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 370mA | 1.2Ohm @ 350mA, 4.5V | 450mV @ 250µA (Min) | 1.5nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1024X-T1-E3MOSFET 2N-CH 20V 0.485A SOT563F Vishay Siliconix |
2,941 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 485mA | 700mOhm @ 600mA, 4.5V | 900mV @ 250µA | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1025X-T1-E3MOSFET 2P-CH 60V 0.19A SOT563F Vishay Siliconix |
2,508 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 60V | 190mA | 4Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1026X-T1-E3MOSFET 2N-CH 60V 0.305A SOT563F Vishay Siliconix |
3,718 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 60V | 305mA | 1.4Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 30pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
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