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Transistores - Bipolares (BJT) - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KSA1015OTATRANS PNP 50V 0.15A TO92-3 onsemi |
2,283 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | - | Obsolete | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 400 mW | 80MHz | 150°C (TJ) | Through Hole |
|
2SD2257(CANO,Q,M)TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,686 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
KSE803STRANS NPN DARL 80V 4A TO126-3 onsemi |
2,577 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN - Darlington | 4 A | 80 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
KSE800STSSTUTRANS NPN DARL 60V 4A TO126-3 onsemi |
2,033 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN - Darlington | 4 A | 60 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
KSE800STRANS NPN DARL 60V 4A TO126-3 onsemi |
2,437 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN - Darlington | 4 A | 60 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257(Q,M)TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
2,559 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
KSE802STUTRANS NPN DARL 80V 4A TO126-3 onsemi |
2,083 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN - Darlington | 4 A | 80 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257,KEHINQ(JTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,737 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
KSE801STUTRANS NPN DARL 60V 4A TO126-3 onsemi |
3,104 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN - Darlington | 4 A | 60 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
KSE803STUTRANS NPN DARL 80V 4A TO126-3 onsemi |
3,274 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN - Darlington | 4 A | 80 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257,NIKKIQ(JTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,007 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
KSC1507YTUTRANS NPN 300V 200UA TO220-3 onsemi |
3,056 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN | 200 µA | 300 V | 2V @ 5mA, 50mA | 100µA (ICBO) | 120 @ 10mA, 10V | 15 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
KSC1507YTRANS NPN 300V 200UA TO220-3 onsemi |
3,456 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 200 µA | 300 V | 2V @ 5mA, 50mA | 100µA (ICBO) | 120 @ 10mA, 10V | 15 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
2SD2257,Q(JTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,823 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
KSC1507YTSTUTRANS NPN 300V 200UA TO220-3 onsemi |
2,115 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN | 200 µA | 300 V | 2V @ 5mA, 50mA | 100µA (ICBO) | 120 @ 10mA, 10V | 15 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
KSC1507RTRANS NPN 300V 200UA TO220-3 onsemi |
2,208 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 200 µA | 300 V | 2V @ 5mA, 50mA | 100µA (ICBO) | 40 @ 10mA, 10V | 15 W | 80MHz | 150°C (TJ) | Through Hole |
|
2SD2695(T6CANO,A,FTRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
2,096 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
KSC1507OTRANS NPN 300V 200UA TO220-3 onsemi |
2,694 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 200 µA | 300 V | 2V @ 5mA, 50mA | 100µA (ICBO) | 70 @ 10mA, 10V | 15 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
KSC1507OTUTRANS NPN 300V 200UA TO220-3 onsemi |
2,844 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | NPN | 200 µA | 300 V | 2V @ 5mA, 50mA | 100µA (ICBO) | 70 @ 10mA, 10V | 15 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
2SD2695(T6CANO,F,MTRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
3,010 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
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