Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
KSA1220AYSTSTU

KSA1220AYSTSTU

TRANS PNP 160V 1.2A TO126

onsemi
3,875 -

RFQ

KSA1220AYSTSTU

Ficha técnica

Tube - Obsolete PNP 1.2 A 160 V 700mV @ 200mA, 1A 1µA (ICBO) 160 @ 300mA, 5V 1.2 W 175MHz 150°C (TJ) Through Hole
KSE350STU

KSE350STU

TRANS PNP 300V 0.5A TO126-3

onsemi
2,914 -

RFQ

KSE350STU

Ficha técnica

Tube - Obsolete PNP 500 mA 300 V - 100µA (ICBO) 30 @ 50mA, 10V 20 W - 150°C (TJ) Through Hole
ZTX614

ZTX614

TRANS NPN DARL 100V 0.8A TO226

onsemi
2,943 -

RFQ

ZTX614

Ficha técnica

Bulk - Obsolete NPN - Darlington 800 mA 100 V 1.25V @ 8mA, 800mA 100nA (ICBO) 10000 @ 500mA, 5V 1 W - -55°C ~ 150°C (TJ) Through Hole
KSE13003H1AS

KSE13003H1AS

TRANS NPN 400V 1.5A TO126-3

onsemi
3,974 -

RFQ

KSE13003H1AS

Ficha técnica

Bulk - Obsolete NPN 1.5 A 400 V 3V @ 500mA, 1.5A - 9 @ 500mA, 2V 20 W 4MHz 150°C (TJ) Through Hole
KSE13003H2AS

KSE13003H2AS

TRANS NPN 400V 1.5A TO126-3

onsemi
3,042 -

RFQ

KSE13003H2AS

Ficha técnica

Bulk - Obsolete NPN 1.5 A 400 V 3V @ 500mA, 1.5A - 14 @ 500mA, 2V 20 W 4MHz 150°C (TJ) Through Hole
KSE13003AS

KSE13003AS

TRANS NPN 400V 1.5A TO126-3

onsemi
3,288 -

RFQ

KSE13003AS

Ficha técnica

Bulk - Obsolete NPN 1.5 A 400 V 3V @ 500mA, 1.5A - 8 @ 500mA, 2V 20 W 4MHz 150°C (TJ) Through Hole
KSE13003ASTU

KSE13003ASTU

TRANS NPN 400V 1.5A TO126-3

onsemi
3,313 -

RFQ

KSE13003ASTU

Ficha técnica

Tube - Obsolete NPN 1.5 A 400 V 3V @ 500mA, 1.5A - 8 @ 500mA, 2V 20 W 4MHz 150°C (TJ) Through Hole
FPN530A

FPN530A

TRANS NPN 30V 3A TO226

onsemi
2,699 -

RFQ

FPN530A

Ficha técnica

Bulk - Obsolete NPN 3 A 30 V 250mV @ 100mA, 1A 100nA (ICBO) 250 @ 100mA, 2V 1 W 150MHz -55°C ~ 150°C (TJ) Through Hole
MJE180PWD

MJE180PWD

TRANS NPN 40V 3A TO126

onsemi
3,559 -

RFQ

MJE180PWD

Ficha técnica

Bulk - Obsolete NPN 3 A 40 V 1.7V @ 600mA, 3A 100nA (ICBO) 50 @ 100mA, 1V 1.5 W 50MHz 150°C (TJ) Through Hole
FPN660A_D26Z

FPN660A_D26Z

TRANS PNP 60V 3A TO226

onsemi
3,697 -

RFQ

FPN660A_D26Z

Ficha técnica

Tape & Reel (TR) - Obsolete PNP 3 A 60 V 400mV @ 200mA, 2A 100nA (ICBO) 250 @ 500mA, 2V 1 W 75MHz -55°C ~ 150°C (TJ) Through Hole
2SC3665-Y,T2NSF(J

2SC3665-Y,T2NSF(J

TRANS NPN 120V 0.8A MSTM

Toshiba Semiconductor and Storage
2,548 -

RFQ

2SC3665-Y,T2NSF(J

Ficha técnica

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 1 W 120MHz 150°C (TJ) Through Hole
2SC3665-Y,T2YNSF(J

2SC3665-Y,T2YNSF(J

TRANS NPN 120V 0.8A MSTM

Toshiba Semiconductor and Storage
3,333 -

RFQ

2SC3665-Y,T2YNSF(J

Ficha técnica

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 1 W 120MHz 150°C (TJ) Through Hole
2SC3668-O,T2CLAF(J

2SC3668-O,T2CLAF(J

TRANS NPN 50V 2A MSTM

Toshiba Semiconductor and Storage
3,020 -

RFQ

2SC3668-O,T2CLAF(J

Ficha técnica

Bulk - Obsolete NPN 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3668-Y,F2PANF(J

2SC3668-Y,F2PANF(J

TRANS NPN 50V 2A MSTM

Toshiba Semiconductor and Storage
3,104 -

RFQ

2SC3668-Y,F2PANF(J

Ficha técnica

Bulk - Obsolete NPN 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3668-Y,T2F(J

2SC3668-Y,T2F(J

TRANS NPN 50V 2A MSTM

Toshiba Semiconductor and Storage
2,461 -

RFQ

2SC3668-Y,T2F(J

Ficha técnica

Bulk - Obsolete NPN 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3668-Y,T2F(M

2SC3668-Y,T2F(M

TRANS NPN 50V 2A MSTM

Toshiba Semiconductor and Storage
2,991 -

RFQ

2SC3668-Y,T2F(M

Ficha técnica

Bulk - Obsolete NPN 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3668-Y,T2WNLF(J

2SC3668-Y,T2WNLF(J

TRANS NPN 50V 2A MSTM

Toshiba Semiconductor and Storage
3,574 -

RFQ

2SC3668-Y,T2WNLF(J

Ficha técnica

Bulk - Obsolete NPN 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3669-Y(T2OMI,FM

2SC3669-Y(T2OMI,FM

TRANS NPN 80V 2A MSTM

Toshiba Semiconductor and Storage
2,897 -

RFQ

2SC3669-Y(T2OMI,FM

Ficha técnica

Bulk - Obsolete NPN 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3669-Y,T2PASF(M

2SC3669-Y,T2PASF(M

TRANS NPN 80V 2A MSTM

Toshiba Semiconductor and Storage
3,761 -

RFQ

2SC3669-Y,T2PASF(M

Ficha técnica

Bulk - Obsolete NPN 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Through Hole
2SC3672-O(T2ASH,FM

2SC3672-O(T2ASH,FM

TRANS NPN 300V 0.1A MSTM

Toshiba Semiconductor and Storage
2,115 -

RFQ

2SC3672-O(T2ASH,FM

Ficha técnica

Bulk - Obsolete NPN 100 mA 300 V 500mV @ 2mA, 20mA 100nA (ICBO) 30 @ 20mA, 10V 1 W 80MHz 150°C (TJ) Through Hole
Total 23278 Record«Prev1... 888889890891892893894895...1164Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario