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Transistores - Bipolares (BJT) - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SC5354,TOJSQ(OTRANSISTOR NPN TO-3PN Toshiba Semiconductor and Storage |
3,628 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
2SC5354,XGQ(OTRANSISTOR NPN TO-3PN Toshiba Semiconductor and Storage |
2,725 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
KSA1625KTATRANS PNP 400V 0.5A TO92-3 onsemi |
3,461 | - |
RFQ |
Tape & Box (TB) | - | Obsolete | PNP | 500 mA | 400 V | 1V @ 10mA, 100mA | 1µA (ICBO) | 100 @ 50mA, 5V | 750 mW | 10MHz | 150°C (TJ) | Through Hole | |
|
FSBCW30TRANS PNP 32V 0.5A SOT23-3 onsemi |
3,246 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | PNP | 500 mA | 32 V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 215 @ 2mA, 5V | 500 mW | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
TTA006B,Q(STRANSISTOR PNP BIPO TO126N Toshiba Semiconductor and Storage |
2,742 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
KSA1625KBUTRANS PNP 400V 0.5A TO92-3 onsemi |
3,847 | - |
RFQ |
Bulk | - | Obsolete | PNP | 500 mA | 400 V | 1V @ 10mA, 100mA | 1µA (ICBO) | 100 @ 50mA, 5V | 750 mW | 10MHz | 150°C (TJ) | Through Hole | |
|
|
TTB1020B,S4X(STRANSISTOR PNP TO220 Toshiba Semiconductor and Storage |
3,532 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
TTB1067B,Q(STRANSISTOR PNP BIPO TO126N Toshiba Semiconductor and Storage |
3,434 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
FMBS5401TRANS PNP 150V 0.6A SUPERSOT-6 onsemi |
3,498 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | PNP | 600 mA | 150 V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 700 mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
TTC011B,Q(STRANSISTOR NPN BIPO TO126N Toshiba Semiconductor and Storage |
2,574 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
TTC5460B,Q(STRANSISTOR NPN TO126N Toshiba Semiconductor and Storage |
2,570 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
FMBS5551TRANS NPN 160V 0.6A SUPERSOT-6 onsemi |
3,949 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | NPN | 600 mA | 160 V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 700 mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
TTD1415B,S4X(STRANSISTOR NPN TO220SIS Toshiba Semiconductor and Storage |
3,128 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
TTD1509B,Q(STRANSISTOR NPN TO126N Toshiba Semiconductor and Storage |
3,930 | - |
RFQ |
Ficha técnica |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - |
|
FJYF2906PWDTRANS PNP 40V 0.15A SOT563F onsemi |
3,251 | - |
RFQ |
Bulk | - | Obsolete | PNP | 150 mA | 40 V | 500mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 150 mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | |
|
2SA1013-O,T6MIBF(JTRANS PNP 160V 1A TO92L Toshiba Semiconductor and Storage |
2,266 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 1 A | 160 V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 60 @ 200mA, 5V | 900 mW | 50MHz | 150°C (TJ) | Through Hole |
|
|
FSB6726TRANS PNP 30V 1.5A SOT23-3 onsemi |
2,407 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | PNP | 1.5 A | 30 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 1A, 1V | 500 mW | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
2SA1020A,NSEIKIF(JTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
3,541 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1020A,T6CSF(JTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
2,905 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
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|
FJN3303BUTRANS NPN 400V 1.5A TO92-3 onsemi |
2,283 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | NPN | 1.5 A | 400 V | 3V @ 500mA, 1.5A | 10µA (ICBO) | 14 @ 500mA, 2V | 1.1 W | 4MHz | 150°C (TJ) | Through Hole |
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