Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
PHPT60415NY115

PHPT60415NY115

POWER BIPOLAR TRANSISTOR NPN

NXP USA Inc.
2,835 -

RFQ

PHPT60415NY115

Ficha técnica

Bulk * Active - - - - - - - - - -
PHPT61010NY115

PHPT61010NY115

POWER BIPOLAR TRANSISTOR NPN

NXP USA Inc.
3,393 -

RFQ

PHPT61010NY115

Ficha técnica

Bulk * Active - - - - - - - - - -
PHPT610030NK115

PHPT610030NK115

SMALL SIGNAL BIPOLAR TRANSISTOR

NXP USA Inc.
3,992 -

RFQ

PHPT610030NK115

Ficha técnica

Bulk * Active - - - - - - - - - -
PBSS4032NX/DG/B2115

PBSS4032NX/DG/B2115

SMALL SIGNAL BIPOLAR TRANSISTOR

NXP USA Inc.
3,691 -

RFQ

PBSS4032NX/DG/B2115

Ficha técnica

Bulk * Active - - - - - - - - - -
BFU590Q115

BFU590Q115

SMALL SIGNAL BIPOLAR TRANSISTOR

NXP USA Inc.
3,797 -

RFQ

BFU590Q115

Ficha técnica

Bulk * Active - - - - - - - - - -
A2T07D160W04SR3128

A2T07D160W04SR3128

RF POWER LDMOS TRANSISTOR

NXP USA Inc.
3,805 -

RFQ

A2T07D160W04SR3128

Ficha técnica

Bulk * Active - - - - - - - - - -
BLF10M6200112

BLF10M6200112

POWER LDMOS TRANSISTOR

NXP USA Inc.
2,284 -

RFQ

Bulk * Active - - - - - - - - - -
BLF10M6LS200U112

BLF10M6LS200U112

POWER LDMOS TRANSISTOR

NXP USA Inc.
260 -

RFQ

Bulk * Active - - - - - - - - - -
BLF644P112

BLF644P112

BROADBAND POWER LDMOS TRANSISTOR

NXP USA Inc.
2,005 -

RFQ

BLF644P112

Ficha técnica

Bulk * Active - - - - - - - - - -
BLF574XRS112

BLF574XRS112

POWER LDMOS TRANSISTOR, SOT1214

NXP USA Inc.
3,699 -

RFQ

Bulk * Active - - - - - - - - - -
CLF1G0035S-100

CLF1G0035S-100

RF POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
3,171 -

RFQ

CLF1G0035S-100

Ficha técnica

Bulk * Active - - - - - - - - - -
BLF888D112

BLF888D112

UHF POWER LDMOS TRANSISTOR, SOT5

NXP USA Inc.
122 -

RFQ

BLF888D112

Ficha técnica

Bulk * Active - - - - - - - - - -
BLF888DU112

BLF888DU112

UHF POWER LDMOS TRANSISTOR, SOT5

NXP USA Inc.
141 -

RFQ

BLF888DU112

Ficha técnica

Bulk * Active - - - - - - - - - -
BLF888DS112

BLF888DS112

UHF POWER LDMOS TRANSISTOR, SOT5

NXP USA Inc.
3,003 -

RFQ

BLF888DS112

Ficha técnica

Bulk * Active - - - - - - - - - -
BLF184XR112

BLF184XR112

POWER LDMOS TRANSISTOR

NXP USA Inc.
2,262 -

RFQ

BLF184XR112

Ficha técnica

Bulk * Active - - - - - - - - - -
BLA6G1011L-200RG112

BLA6G1011L-200RG112

POWER LDMOS TRANSISTOR, SOT502 (

NXP USA Inc.
2,598 -

RFQ

Bulk * Active - - - - - - - - - -
BLC8G27LS-140AV518

BLC8G27LS-140AV518

LDMOS RF POWER TRANSISTOR

NXP USA Inc.
3,856 -

RFQ

BLC8G27LS-140AV518

Ficha técnica

Bulk * Active - - - - - - - - - -
PMBT4403/DLTR

PMBT4403/DLTR

PMBT4403 - PNP SWITCHING TRANSIS

NXP USA Inc.
2,794 -

RFQ

Bulk * Active - - - - - - - - - -
BC857W,135

BC857W,135

NOW NEXPERIA BC857W - SMALL SIGN

NXP USA Inc.
2,233 -

RFQ

BC857W,135

Ficha técnica

Bulk Automotive, AEC-Q101 Active PNP 100 mA 45 V 600mV @ 5mA, 100mA 15nA (ICBO) 125 @ 2mA, 5V 200 mW 100MHz 150°C (TJ) Surface Mount
PMST6429,115

PMST6429,115

NOW NEXPERIA PMST6429 - SMALL SI

NXP USA Inc.
3,994 -

RFQ

PMST6429,115

Ficha técnica

Bulk Automotive, AEC-Q101 Active NPN 100 mA 45 V 600mV @ 5mA, 100mA 10nA (ICBO) 500 @ 100µA, 5V 200 mW 700MHz 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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