Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SC5171,MATUDQ(J

2SC5171,MATUDQ(J

TRANS NPN 180V 2A TO220NIS

Toshiba Semiconductor and Storage
3,689 -

RFQ

2SC5171,MATUDQ(J

Ficha técnica

Bulk - Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SC5171,ONKQ(J

2SC5171,ONKQ(J

TRANS NPN 180V 2A TO220NIS

Toshiba Semiconductor and Storage
2,093 -

RFQ

2SC5171,ONKQ(J

Ficha técnica

Bulk - Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SC5171,Q(J

2SC5171,Q(J

TRANS NPN 180V 2A TO220NIS

Toshiba Semiconductor and Storage
3,396 -

RFQ

2SC5171,Q(J

Ficha técnica

Bulk - Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SC5172(YAZK,Q,M)

2SC5172(YAZK,Q,M)

TRANS NPN 400V 5A TO220NIS

Toshiba Semiconductor and Storage
2,699 -

RFQ

2SC5172(YAZK,Q,M)

Ficha técnica

Bulk - Obsolete NPN 5 A 400 V 1V @ 250mA, 2A 20µA (ICBO) 20 @ 500mA, 5V 2 W - 150°C (TJ) Through Hole
2SC5201(T6MURATAFM

2SC5201(T6MURATAFM

TRANS NPN 600V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,310 -

RFQ

2SC5201(T6MURATAFM

Ficha técnica

Bulk - Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) Through Hole
2SC5201(TE6,F,M)

2SC5201(TE6,F,M)

TRANS NPN 600V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,452 -

RFQ

2SC5201(TE6,F,M)

Ficha técnica

Bulk - Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) Through Hole
2SC5201,F(J

2SC5201,F(J

TRANS NPN 600V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,329 -

RFQ

2SC5201,F(J

Ficha técnica

Bulk - Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) Through Hole
2SC5201,T6F(J

2SC5201,T6F(J

TRANS NPN 600V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,290 -

RFQ

2SC5201,T6F(J

Ficha técnica

Bulk - Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) Through Hole
2SC5201,T6MURAF(J

2SC5201,T6MURAF(J

TRANS NPN 600V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,462 -

RFQ

2SC5201,T6MURAF(J

Ficha técnica

Bulk - Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) Through Hole
2SC5459(TOJS,Q,M)

2SC5459(TOJS,Q,M)

TRANS NPN 400V 3A TO220NIS

Toshiba Semiconductor and Storage
3,439 -

RFQ

2SC5459(TOJS,Q,M)

Ficha técnica

Bulk - Obsolete NPN 3 A 400 V 1V @ 150mA, 1.2A 100µA (ICBO) 20 @ 300mA, 5V 2 W - 150°C (TJ) Through Hole
2SC5549,T6F(J

2SC5549,T6F(J

TRANS NPN 400V 1A TO92MOD

Toshiba Semiconductor and Storage
3,810 -

RFQ

2SC5549,T6F(J

Ficha técnica

Bulk - Obsolete NPN 1 A 400 V 1V @ 25mA, 200mA 100µA (ICBO) 20 @ 40mA, 5V 900 mW - 150°C (TJ) Through Hole
2SC5930(T2MITUM,FM

2SC5930(T2MITUM,FM

TRANS NPN 600V 1A MSTM

Toshiba Semiconductor and Storage
2,734 -

RFQ

2SC5930(T2MITUM,FM

Ficha técnica

Bulk - Obsolete NPN 1 A 600 V 1V @ 75mA, 600mA 100µA (ICBO) 40 @ 200mA, 5V 1 W - 150°C (TJ) Through Hole
2SC5930(TPF2,F,M)

2SC5930(TPF2,F,M)

TRANS NPN 600V 1A MSTM

Toshiba Semiconductor and Storage
2,239 -

RFQ

2SC5930(TPF2,F,M)

Ficha técnica

Bulk - Obsolete NPN 1 A 600 V 1V @ 75mA, 600mA 100µA (ICBO) 40 @ 200mA, 5V 1 W - 150°C (TJ) Through Hole
2SC6010(T2MITUM,FM

2SC6010(T2MITUM,FM

TRANS NPN 600V 1A MSTM

Toshiba Semiconductor and Storage
2,992 -

RFQ

2SC6010(T2MITUM,FM

Ficha técnica

Bulk - Obsolete NPN 1 A 600 V 1V @ 75mA, 600mA 100µA (ICBO) 100 @ 100mA, 5V 1 W - 150°C (TJ) Through Hole
2SC6040(TPF2,Q,M)

2SC6040(TPF2,Q,M)

TRANS NPN 800V 1A MSTM

Toshiba Semiconductor and Storage
2,242 -

RFQ

2SC6040(TPF2,Q,M)

Ficha técnica

Bulk - Obsolete NPN 1 A 800 V 1V @ 100mA, 800mA 100µA (ICBO) 60 @ 100mA, 5V 1 W - 150°C (TJ) Through Hole
2SC6040,T2Q(J

2SC6040,T2Q(J

TRANS NPN 800V 1A MSTM

Toshiba Semiconductor and Storage
2,235 -

RFQ

2SC6040,T2Q(J

Ficha técnica

Bulk - Obsolete NPN 1 A 800 V 1V @ 100mA, 800mA 100µA (ICBO) 60 @ 100mA, 5V 1 W - 150°C (TJ) Through Hole
2SC6042,T2HOSH1Q(J

2SC6042,T2HOSH1Q(J

TRANS NPN 375V 1A MSTM

Toshiba Semiconductor and Storage
2,450 -

RFQ

2SC6042,T2HOSH1Q(J

Ficha técnica

Bulk - Obsolete NPN 1 A 375 V 1V @ 100mA, 800mA 100µA (ICBO) 100 @ 100mA, 5V 1 W - 150°C (TJ) Through Hole
2SC6042,T2WNLQ(J

2SC6042,T2WNLQ(J

TRANS NPN 375V 1A MSTM

Toshiba Semiconductor and Storage
3,545 -

RFQ

2SC6042,T2WNLQ(J

Ficha técnica

Bulk - Obsolete NPN 1 A 375 V 1V @ 100mA, 800mA 100µA (ICBO) 100 @ 100mA, 5V 1 W - 150°C (TJ) Through Hole
2SC6139,T2F(M

2SC6139,T2F(M

TRANS NPN 160V 1.5A MSTM

Toshiba Semiconductor and Storage
2,373 -

RFQ

2SC6139,T2F(M

Ficha técnica

Bulk - Obsolete NPN 1.5 A 160 V 500mV @ 50mA, 500mA 100nA (ICBO) 140 @ 100mA, 5V 1 W 100MHz 150°C (TJ) Through Hole
2SD2129,ALPSQ(M

2SD2129,ALPSQ(M

TRANS NPN 100V 3A TO220NIS

Toshiba Semiconductor and Storage
3,229 -

RFQ

2SD2129,ALPSQ(M

Ficha técnica

Bulk - Obsolete NPN 3 A 100 V 2V @ 12mA, 3A 100µA (ICBO) 2000 @ 1.5A, 3V 2 W - 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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