+86 075582561136
Subir BOM
Transistores - Bipolares (BJT) - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UPD31577S1-F6-ATRANSISTOR BJT NPN 150V 1A Renesas Electronics America Inc |
412 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
LM195K/883POWER BIPOLAR TRANSISTOR NPN National Semiconductor |
358 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
UPD8831BCT-FAB-ADISCRETE / POWER TRANSISTOR Renesas Electronics America Inc |
3,809 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
UPD3747AD-ADISCTRETE/ POWER TRANSISTOR Renesas Electronics America Inc |
2,246 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
BLF521RF SMALL SIGNAL FIELD-EFFECT TRA Ampleon USA Inc. |
202 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
NTE16007TRANS NPN 55V 3A TO8 NTE Electronics, Inc |
2,977 | - |
RFQ |
Ficha técnica |
Bag | - | Active | NPN | 3 A | 55 V | 750mV @ 40mA, 750mA | 15µA (ICBO) | 35 @ 750mA, 4V | 25 W | - | -65°C ~ 200°C | Through Hole |
|
JANS2N3637TRANS PNP 175V 1A TO39 Microchip Technology |
445 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/357 | Active | PNP | 1 A | 175 V | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole |
|
|
A2T07D160W04SR3128RF POWER LDMOS TRANSISTOR NXP USA Inc. |
3,805 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
BLF10M6200112POWER LDMOS TRANSISTOR NXP USA Inc. |
2,284 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
BLF10M6200112-AMPPOWER LDMOS TRANSISTOR Ampleon USA Inc. |
537 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
BLF10M6LS200U112POWER LDMOS TRANSISTOR NXP USA Inc. |
260 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
BLF644P112BROADBAND POWER LDMOS TRANSISTOR NXP USA Inc. |
2,005 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
BLA1011-200H200H 200W LDMOS AVIONICS POWER T Ampleon USA Inc. |
3,174 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
BLF574XRS112POWER LDMOS TRANSISTOR, SOT1214 NXP USA Inc. |
3,699 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
FT150R12KE3B5BDLA1IGBT MODULE Infineon Technologies |
378 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
CLF1G0035S-100RF POWER FIELD-EFFECT TRANSISTOR NXP USA Inc. |
3,171 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
BLF888D112UHF POWER LDMOS TRANSISTOR, SOT5 NXP USA Inc. |
122 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
BLF888DU112UHF POWER LDMOS TRANSISTOR, SOT5 NXP USA Inc. |
141 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
BLF888DS112UHF POWER LDMOS TRANSISTOR, SOT5 NXP USA Inc. |
3,003 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
RX1214B280YHMICROWAVE POWER TRANSISTOR Ampleon USA Inc. |
156 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
