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Transistores - Bipolares (BJT) - Matrices Prepolarizado
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | Resistor-Base(R1) | Resistor-EmitterBase(R2) | DCCurrentGain(hFE)(Min)@IcVce | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | Frequency-Transition | Power-Max | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RN2706,LFPNPX2 BRT Q1BSR4.7KOHM Q1BER47KO Toshiba Semiconductor and Storage |
2,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount |
|
|
RN1705,LFNPNX2 BRT Q1BSR2.2KOHM Q1BER47KO Toshiba Semiconductor and Storage |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount |
|
|
RN1707,LFNPNX2 BRT Q1BSR10KOHM Q1BER47KOH Toshiba Semiconductor and Storage |
2,714 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount |
|
|
RN1701,LFNPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K Toshiba Semiconductor and Storage |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount |
|
RN4902FE,LF(CTTRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage |
2,256 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz, 200MHz | 100mW | Surface Mount |
|
RN2506(TE85L,F)TRANS 2PNP PREBIAS 0.3W SMV Toshiba Semiconductor and Storage |
3,923 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
RN4982,LF(CTTRANS NPN/PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage |
2,884 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100µA (ICBO) | 250MHz, 200MHz | 200mW | Surface Mount |
|
RN2703JE(TE85L,F)TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage |
2,661 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount |
|
RN2603(TE85L,F)TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
2,655 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
|
RN1703JE(TE85L,F)TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage |
3,292 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount |
|
RN1970(TE85L,F)TRANS 2NPN PREBIAS 0.2W US6 Toshiba Semiconductor and Storage |
2,493 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 200mW | Surface Mount |
|
|
RN1607(TE85L,F)TRANS 2NPN PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
2,590 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
|
RN4606(TE85L,F)TRANS NPN/PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
3,472 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100µA (ICBO) | 200MHz, 250MHz | 300mW | Surface Mount |
|
|
RN1701JE(TE85L,F)TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage |
2,829 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount |
|
|
RN1511(TE85L,F)TRANS 2NPN PREBIAS 0.3W SMV Toshiba Semiconductor and Storage |
2,425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 10kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
|
RN4901FE,LF(CTPNP + NPN BRT Q1BSR4.7KOHM Q1BER Toshiba Semiconductor and Storage |
2,445 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz, 250MHz | 100mW | Surface Mount |
|
|
RN2901,LF(CTPNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K Toshiba Semiconductor and Storage |
3,334 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount |
|
|
RN2711,LFPNP X 2 BRT Q1BSR=10KOHM Q1BER=I Toshiba Semiconductor and Storage |
3,335 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 10kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount |
|
|
RN2908FE(TE85L,F)TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage |
3,889 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 22kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount |
|
|
RN2909FE(TE85L,F)TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage |
3,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 47kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount |
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